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Method for preparing manganese arsenide

A technology of manganese arsenide and manganese powder, which is applied in chemical instruments and methods, inorganic chemistry, manganese compounds, etc., can solve the problems of large equipment investment and complex production process, and achieve the effects of low equipment investment, high purity and simple method.

Inactive Publication Date: 2018-02-23
红河砷业有限责任公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art, some people use molecular beam epitaxy technology and equipment, use GaAs(001) single crystal as the substrate, increase the growth temperature to 450-550°C to realize the S-K growth mode, and obtain epitaxial MnAs lying on the surface of GaAs(001) Nanowires, this method requires strict reaction control conditions, complex production process, and large investment in equipment

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0013] The invention relates to a method for preparing manganese arsenide. The method is to react high-purity arsenic and manganese powder under the protection of an inert gas in a high-temperature airtight environment isolated from oxygen and moisture to prepare gray-black manganese arsenide. The specific method steps are as follows:

[0014] (1) In a high-temperature airtight environment isolated from oxygen and moisture, 60 g of high-purity arsenic with an arsenic content ≥ 99.9 wt % and 100 g of manganese powder with a manganese content ≥ 99.8 wt % and a particle size of 100 to 140 meshes in a mass ratio of 0.6: 1. Mix in a mixer for 30 minutes;

[0015] (2) Put the mixture into a closed tube furnace, pass through helium to replace the air in the reaction tube for 5 minutes, heat to 780° C., react for 10 hours, and then cool to obtain a solid product;

[0016] (3) Pass the solid product obtained in step (2) through a 200-mesh standard sieve, and obtain 135 g of manganese ...

Embodiment 2

[0018] A method for preparing manganese arsenide, comprising 70 g of high-purity arsenic with arsenic content ≥ 99.9 wt % and manganese content

[0019] ≥99.8wt%, 100g of manganese powder with a particle size of 100-140 mesh, according to the mass ratio of 0.7:1, mixed in a mixer for 45 minutes; put the mixed material in a tube furnace, and use the air in the argon conversion furnace tube 3 minutes, heated to 950° C., reacted for 6 hours, cooled to obtain a solid product; passed the obtained solid product through a 200-mesh standard sieve, and obtained 157 g of manganese arsenide under the sieve, and the manganese arsenide content was greater than 99.5 wt%.

Embodiment 3

[0021] A method for preparing manganese arsenide, comprising 100 g of high-purity arsenic with arsenic content ≥ 99.9 wt % and manganese content

[0022] ≥99.8wt%, 100g of manganese powder with a particle size of 100-140 mesh, according to the mass ratio of 1:1, mixed in a mixer for 60 minutes; put the mixed material in a tube furnace, and use neon gas to convert the air in the furnace tube 1 minute, heated to 600° C. and reacted for 12 hours, and cooled to obtain a solid product; passed the obtained solid product through a 200-mesh standard sieve, and obtained 180 g of manganese arsenide under the sieve, and the manganese arsenide content was greater than 99.5 wt%.

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PUM

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Abstract

The invention provides a method for preparing manganese arsenide. According to the method provided by the invention, high-purity arsenic and manganese powder react under the protection of inert gas ina high-temperature sealed environment isolated from oxygen and moisture to prepare black gray manganese arsenide. The method provided by the invention is simple; raw materials are cheap; reaction control conditions are easy to control and the pollution to the environment is small.

Description

technical field [0001] The invention belongs to the technical field of manganese arsenide preparation methods. Background technique [0002] Manganese arsenide is a new type of semiconductor material, gray black powder, nickel arsenide structure. The molecular weight of manganese arsenide is 129.86. Manganese arsenide is a new type of semiconductor material. In the arsenic-containing series semiconductor material industry, there are also gallium arsenide, indium arsenide, gallium arsenic phosphide, and indium arsenic phosphide, which are increasingly used. In the prior art, some people use molecular beam epitaxy technology and equipment, use GaAs(001) single crystal as the substrate, increase the growth temperature to 450-550°C to realize the S-K growth mode, and obtain epitaxial MnAs lying on the surface of GaAs(001) For nanowires, this method requires strict reaction control conditions, complex production process and large equipment investment. Contents of the invention...

Claims

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Application Information

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IPC IPC(8): C01G45/00
CPCC01G45/00C01P2006/80
Inventor 季登会段铭诚卢兴伟孙磊李畅杨习文
Owner 红河砷业有限责任公司