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A kind of preparation method of long straight boron nitride nanowire

A boron nitride nanometer and boron powder technology, which is applied in chemical instruments and methods, nitrogen compounds, nanotechnology, etc., can solve problems such as low yield of boron nitride nanowires, bending research and application, and complex morphology of equipment. Achieve the effect of low cost, convenient experiment process and cheap equipment

Active Publication Date: 2020-03-31
HARBIN INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to solve the problems of low yield, high cost, complex equipment and shape bending affecting subsequent research and application of boron nitride nanowires prepared by the existing method, and to provide a preparation of long straight boron nitride nanowires method

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  • A kind of preparation method of long straight boron nitride nanowire
  • A kind of preparation method of long straight boron nitride nanowire
  • A kind of preparation method of long straight boron nitride nanowire

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specific Embodiment approach 1

[0024] Specific implementation mode 1: This implementation mode records a method for preparing long straight boron nitride nanowires, and the steps of the method are as follows:

[0025] Step 1: Put the boron powder and catalyst powder into the ball milling tank, vacuumize the ball milling tank until the pressure is -0.1MPa ~ -0.09MPa, and then inject high-purity nitrogen until the pressure inside the ball milling tank is 0MPa~0.14MPa , and then place the ball mill jar in the ball mill to mill the boron powder and the catalyst powder, the mass ratio of the boron powder to the catalyst powder is 1:0.08~0.7, and the particle size after ball milling is 600nm~1200nm;

[0026] Step 2: Disperse the ball-milled powder into alcohol so that the solid-liquid ratio of the powder to alcohol is 0.5-0.75g / mL to form an ink-like precursor, and brush the ink-like precursor onto the substrate, and the alcohol The volume concentration ≥ 99.7%;

[0027] Step 3: Inject high-purity nitrogen gas i...

specific Embodiment approach 2

[0029] Specific embodiment two: the preparation method of a kind of long straight boron nitride nanowire described in specific embodiment one, in step one, described catalyst is the mixture of ferric nitrate, silicon and silicon oxide, wherein, ferric nitrate, silicon The mass ratio to silicon oxide is 0.08:(0.05~0.2):(0.05~0.11).

specific Embodiment approach 3

[0030] Embodiment 3: In the method for preparing long straight boron nitride nanowires described in Embodiment 1, in step 2, the substrate is a steel plate.

[0031] Embodiment 4: The preparation method of a long straight boron nitride nanowire described in Embodiment 1, in step 4, the volume ratio of nitrogen to hydrogen in the nitrogen-hydrogen mixed gas is 85:15, and the nitrogen-hydrogen mixed gas The gas flow rate is 100 sccm ~ 400 sccm.

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Abstract

The invention provides a preparation method of a long straight boron nitride nanowire, belonging to the technical field of preparation of nanowires. The preparation method comprises the following steps: putting boron powder and catalyst powder into a ball milling tank, vacuumizing the ball milling tank, then injecting high-purity nitrogen gas, then putting the ball milling tank in a ball milling machine, and carrying out ball milling on the boron powder and the catalyst powder; dispersing the powder into alcohol to form an ink-shaped precursor, and brushing and coating the ink-shaped precursoronto a substrate; introducing the high-purity nitrogen gas into a sintering furnace, placing the substrate onto a sintering boat, and pushing into the sintering furnace; heating at a heating rate of10-20 DEG C / min until the temperature in the sintering furnace rises to 1100-1200 DEG C from room temperature, keeping constant temperature for 1 hour in a nitrogen and hydrogen mixture, and then cooling to room temperature, thus obtaining the long straight boron nitride nanowire. The preparation method provided by the invention has the advantages that the prepared long straight boron nitride nanowire is high in purity, the purity can reach more than 90%, and the preparation temperature and the cost are low; and technology of the preparation method is simple and practicable, the used equipmentis cheap, the experimental process is convenient, and the product purity is high.

Description

technical field [0001] The invention belongs to the technical field of nanowire preparation, and in particular relates to a method for preparing long straight boron nitride nanowires. Background technique [0002] Since the discovery of carbon nanotubes, boron nitride nanomaterials, as analogs of carbon nanomaterials, have aroused widespread interest and attention. Theoretical studies have shown that boron nitride nanomaterials have excellent physical and chemical properties, such as the band gap width is not affected by hand shape and tube diameter, and has high temperature resistance, oxidation resistance, chemical corrosion resistance, good thermal stability and excellent mechanical properties etc. These excellent properties make boron nitride nanomaterials have great application prospects in the fields of high-temperature and high-power nano-devices, composite materials, and flat panel display lamps. Therefore, as one of the important research directions in the field o...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B21/064B82Y40/00
CPCC01B21/0641C01P2002/85C01P2004/03C01P2004/04C01P2004/16C01P2004/61C01P2004/62C01P2004/64C01P2006/80
Inventor 李玲庄萃萃刘晓为
Owner HARBIN INST OF TECH
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