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Preparation method of graphene conductive film

A technology of graphene film and conductive film, which is applied in the direction of cable/conductor manufacturing, circuit, electrical components, etc., can solve the problems of unsatisfactory performance requirements, unreasonable recycling, and less indium resources, and achieve good economic and social benefits , Low production cost, clean and pollution-free surface

Inactive Publication Date: 2018-04-06
CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, there are also some disadvantages in the use of indium tin oxide conductive films, including: (1) Indium resources are scarce, resulting in continuous price increases, making ITO an increasingly expensive material, such as spraying, pulsed laser deposition, electroplating, etc.
Moreover, indium oxide has certain toxicity, and unreasonable recycling can easily cause environmental pollution
(2) The brittle nature of ITO makes it unable to meet the performance requirements of some new applications (such as bendable flexible displays, touch screens, organic solar cells), and is not suitable for the production of next-generation flexible electronic devices

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1, a kind of preparation method of graphene conductive film, comprises the following steps:

[0026] A. Deposit nickel thin film layer

[0027] Deposit a nickel thin film layer on a glass substrate; the method for depositing a nickel thin film layer is a magnetron sputtering method, and the vacuum degree of the background: 8 × 10 -5 , the substrate temperature was 65°C.

[0028] B, preparation of graphene oxide film layer

[0029] Coating the graphene oxide aqueous solution on the nickel film layer and drying at 60°C to form a graphene oxide film layer with a thickness of 20 μm;

[0030] C. Deposit graphene layer

[0031] Depositing a graphene film layer on the graphene oxide layer by CVD method, the thickness of the graphene film layer is 50 μm;

[0032] D. Post-processing

[0033] The semi-finished product obtained in step C is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene oxide film layer is cleaned with dil...

Embodiment 2

[0035] 1, a kind of preparation method of graphene conductive film, comprises the following steps:

[0036] A. Deposit nickel thin film layer

[0037] Deposit a nickel thin film layer on a glass substrate; the method for depositing a nickel thin film layer is magnetron sputtering, and the vacuum degree of the background: 2×10 -4 Pa, the substrate temperature is 80°C.

[0038] B, preparation of graphene oxide film layer

[0039] Coating a graphene oxide aqueous solution on the nickel film layer, drying at 90°C to form a graphene oxide film layer with a thickness of 30 μm;

[0040] C. Deposit graphene layer

[0041] Depositing a graphene film layer on the graphene oxide layer by CVD method, the thickness of the graphene film layer is 90 μm;

[0042] D. Post-processing

[0043] The semi-finished product obtained in step C is subjected to cooling treatment, and after the temperature drops to room temperature, the graphene oxide film layer is cleaned with dilute nitric acid...

Embodiment 3

[0049] This embodiment is on the basis of embodiment 3, in step C, in the process of depositing the graphene film layer by the CVD method, the carbon source is methane, and the gas is H 2 ; Deposition temperature is 580°C, deposition pressure is 1×10 -4 Pa.

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Abstract

The invention discloses a preparation method of a graphene conductive film, and belongs to the technical field of conductive film production. The method comprises the following steps that A. a nickelfilm layer is deposited on a glass substrate; and the method for depositing the nickel film layer is the magnetron sputtering method; B. a graphene oxide film layer is prepared: a graphene oxide aqueous solution is coated on the nickel film layer and dried under the condition of 60-90 DEG C so that the graphene oxide film layer of which the thickness is 20-30 microns is formed; C. a graphene layeris deposited: the graphene film layer is deposited on the graphene oxide layer by using a CVD method, wherein the thickness of the graphene film layer is 50-90 microns; and D. the semi-finished product obtained in the step C is cooled in post-treatment, the graphene oxide film layer is cleaned by dilute nitric acid after the temperature reduces to the room temperature, the surface nickel film layer is removed and then drying is performed so that the graphene conductive film can be obtained. The preparation method of the graphene conductive film has the advantages of low production cost and high efficiency.

Description

technical field [0001] The invention relates to a preparation method of a graphene conductive film, belonging to the technical field of conductive film production. Background technique [0002] With the development of science and technology, society's demand for new materials is also increasing. Materials are the material basis for the progress of human civilization and the development of science and technology. The renewal of materials has brought about great changes in people's lives. At present, the vigorous development of new transparent and conductive thin film materials has been widely used in liquid crystal displays, touch screens, smart windows, solar cells, microelectronics, information sensors and even military industries, and is penetrating into other technological fields. Since thin film technology is closely related to various technologies, scientists in various fields are interested in thin film preparation and its properties. [0003] Conductive film is a fi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B1/04
CPCH01B13/00H01B1/04
Inventor 王红丽
Owner CHENGDU TIAN HANG ZHI HONG IP MANAGEMENT CO LTD
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