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Preparation method of copper indium selenide counter electrodes for quantum dot sensitized solar cells

A technology for sensitization of solar cells and quantum dots, applied in photosensitive devices, electrolytic capacitors, circuits, etc., can solve problems such as contamination of electrolytes and photoanode, and achieve the effects of low cost, smooth surface, broad research value and application prospects

Active Publication Date: 2018-04-06
HEFEI UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, commonly used metal sulfide counter electrodes, such as Cu 2 S, CoS, PbS, etc., despite their high reducing activity towards polysulfide electrolytes, will contaminate electrolytes and photoanodes after long-term use

Method used

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  • Preparation method of copper indium selenide counter electrodes for quantum dot sensitized solar cells
  • Preparation method of copper indium selenide counter electrodes for quantum dot sensitized solar cells
  • Preparation method of copper indium selenide counter electrodes for quantum dot sensitized solar cells

Examples

Experimental program
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Effect test

Embodiment 1

[0024] 1. Pretreatment

[0025] Cut the FTO conductive substrate into 4cm*2cm size, place them in decontamination solution, acetone, ethanol, and deionized water for ultrasonic cleaning for 15 minutes, then place them in an ultraviolet ozone cleaner for 20 minutes, and save them for later use;

[0026] 2. Preparation of electroplating solution

[0027] Citric acid monohydrate (C 6 h 8 o 7 ·H 2 O), copper sulfate pentahydrate (CuSO 4 ·5H 2 O), indium sulfate (In 2 (SO 4 ) 3 ), selenium dioxide (SeO 2 ) mixed with ultrapure water, using a magnetic stirrer to stir the mixed solution for 60 minutes to completely dissolve to obtain an electroplating solution; the molar concentrations of each component in the electroplating solution are respectively citric acid 0.4M, copper sulfate 0.006M, indium sulfate 0.006M, di Selenium oxide 0.01M.

[0028] 3. Electrochemical deposition

[0029] Add the electroplating solution prepared in step 2 into the electrolytic cell, use the p...

Embodiment 2

[0034] 1. Pretreatment

[0035] Cut the molybdenum-sputtered soda-lime glass substrate into 4cm*2cm, ultrasonically clean it in detergent solution, acetone, ethanol, and deionized water for 15 minutes, then place it in an ultraviolet ozone cleaner for 20 minutes, and store it for later use;

[0036] 2. Preparation of electroplating solution

[0037] Citric acid monohydrate (C 6 h 8 o 7 ·H 2 O), copper sulfate pentahydrate (CuSO 4 ·5H 2 O), indium sulfate (In 2 (SO 4 ) 3 ), selenium dioxide (SeO 2 ) mixed with ultrapure water, using a magnetic stirrer to stir the mixed solution for 60 minutes to completely dissolve to obtain an electroplating solution; the molar concentrations of each component in the electroplating solution are respectively citric acid 0.4M, copper sulfate 0.006M, indium sulfate 0.006M, di Selenium oxide 0.01M.

[0038] 3. Electrochemical deposition

[0039] Add the electroplating solution prepared in step 2 into the electrolytic cell, use the pretre...

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PUM

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Abstract

The invention discloses a preparation method of copper indium selenide counter electrodes for quantum dot sensitized solar cells and employs electrochemical deposition in combination with a selenium treatment method to prepare copper indium selenide counter electrode film. The method is advantaged in that counter electrode catalytic activity and stability of the counter electrodes in the electrolyte can be improved, photoelectric conversion efficiency of photovoltaic devices is lastly improved, the electrochemical deposition method is employed in combination with the selenium treatment method,and properties of low cost, simple operation and easy industrial production are realized.

Description

technical field [0001] The invention relates to a method for preparing a counter electrode of copper indium selenium used in a quantum dot sensitized solar cell, and belongs to the technical field of solar cell thin films. Background technique [0002] The increasingly severe energy shortage, environmental pollution and other issues have prompted people to explore and develop alternative new energy sources, such as solar energy. As a device that can directly convert solar energy into electrical energy, solar cells show great application prospects. Therefore, the development of efficient, stable, and low-cost solar cell devices has become a research hotspot in the field. Quantum dot solar cell is a new type of third-generation solar cell; it uses quantum dots as light-absorbing materials, making its theoretical photoelectric conversion efficiency as high as 44%. Quantum dots have the advantages of high light absorption coefficient, adjustable spectral response range, multi-...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G9/20
CPCH01G9/2022Y02E10/542Y02P70/50
Inventor 周儒黄元璋万磊李昊桐韩镇宇任昇黄思诚
Owner HEFEI UNIV OF TECH
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