Method for transferring graphene patterned film by using gas-liquid interface separation method

A patterned film and graphene film technology, applied in the field of graphene, can solve problems such as the inability to guarantee the structural integrity of film patterns, the inability to prepare graphene films, and the destruction of graphene films, so as to maintain structural integrity and structural integrity Good performance and low cost

Active Publication Date: 2018-04-17
HEFEI GUOXUAN HIGH TECH POWER ENERGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there have been a large number of reports that can test the large-scale preparation of graphene films, and then whether it is photolithography technology, laser direct writing technology, transfer imprinting technology, or inkjet printing technology can only prepare films on flat substrates. Graphene films cannot be fabricated on non-planar substrates
There are also a large number of transfer technologies for graphene films, the common ones are: organic matter paste method, resin transfer method, thermal release tape method, hot press transfer method, etc. However, the use of organic matter and tape methods has certain operational difficulties and inherent defects. ; In addition, the residual glue left after the transfer affects the quality of the transferred film, while the hot press transfer method is only suitable for flexible substrates, and the transfer process is easy to cause damage to the graphene film, which cannot guarantee the integrity of the film pattern structure

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0022] A kind of gas-liquid interface separation method transfers graphene patterned thin film, comprises the following steps:

[0023] (1) Chemical reduction of graphene oxide film: using graphene oxide to prepare a graphene oxide pattern on the first substrate PET, and then using iodine vapor to fumigate to obtain a graphene patterned film;

[0024] (2) Separation of the film substrate: at room temperature, slowly put the PET with the graphene patterned film at an angle of 90° into calm water at 15°C, because the graphene film obtained after reduction contains a small amount of residual iodine After being placed in water, water molecules are inserted between the graphene film and PET along the iodine element, thereby weakening the adhesion, and because of the hydrophobic nature of the graphene film, the film is separated and floats on the water;

[0025] (3) Re-transfer: Slowly scoop up the graphene patterned film by using a glass rod vertically at 90°, and transfer it to th...

Embodiment 2

[0027] A kind of gas-liquid interface separation method transfers graphene patterned thin film, comprises the following steps:

[0028] (1) Chemical reduction of graphene oxide film: use graphene oxide to prepare a graphene oxide pattern on a silicon wafer, and then use hydrazine hydrate solution to fumigate to obtain a graphene patterned film;

[0029] (2) Separation of the film substrate: at room temperature, the silicon wafer with the graphene patterned film is slowly placed in 20°C calm water at an angle of 45°, and the graphene film is separated from the silicon wafer and floats on the water;

[0030] (3) Re-transfer: Slowly pick up the graphene patterned film by using a carbon pen tube with an ordinary curved surface at an angle of 45°, and transfer it to the carbon pen tube.

Embodiment 3

[0032] A kind of gas-liquid interface separation method transfers graphene patterned thin film, comprises the following steps:

[0033] (1) Chemical reduction of graphene oxide film: use graphene oxide to prepare a graphene oxide pattern on PI, and then fumigate with a mixed solution of hydroiodic acid and acetic acid to obtain a graphene patterned film;

[0034] (2) Separation of the film substrate: at room temperature, the PI with the graphene patterned film was slowly placed in 30°C calm water with an inclination of 15°, and the graphene film was separated from the polyimide film and floated on the water;

[0035] (3) Transfer again: the graphene patterned film was slowly picked up by using a curved 50mL test tube at an angle of 45°, and transferred to the test tube.

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PUM

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Abstract

The invention discloses a method for transferring a graphene patterned film by using a gas-liquid interface separation method. The method comprises the following steps: reducing a graphene oxide filmby using a chemical method, separating a film substrate, and transferring the film again, namely inserting a second substrate below a graphene patterned film in an inclined manner, slowly taking out the graphene patterned film, and transferring the graphene patterned film onto the second substrate. The method has the characteristics of being high in stability, simple to operate, low in cost, and the like, a complete graphene patterned film structure can be relatively well maintained, and the method is applicable to planar or curved-surface rigid or flexible substrates.

Description

technical field [0001] The invention relates to the technical field of graphene, in particular to a simple and cheap method for transferring a graphene patterned film by a gas-liquid interface separation method. Background technique [0002] Graphene is an ultra-thin two-dimensional atomic carbon material, with its ultra-high specific surface area, mechanical strength, electrical conductivity, transmittance, stable thermal and chemical properties, and the ability to connect external functional groups. It can be used directly as a flexible electrode material or as a component of flexible functional materials, making it an attractive development prospect in the field of flexible electronic devices. For the application of graphene flexible materials to flexible electronic devices, whether it is flexible graphene conductive circuits, flexible lithium-ion batteries, flexible supercapacitors, flexible field effect transistors and other flexible electronic devices, the realization ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194C01B32/184
Inventor 裴志彬杨尘朱春林
Owner HEFEI GUOXUAN HIGH TECH POWER ENERGY
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