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Method for preparing Zn(S,O) polycrystalline film

A thin film and substrate technology, which is applied in the field of preparation of Zn polycrystalline thin films for solar cells, can solve the problems of low film quality and slow deposition rate, and achieve the effect of increasing surface activity and improving reaction speed

Inactive Publication Date: 2018-04-17
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to solve the problems that the existing chemical water bath method prepares Zn(S,O) thin films with low quality, slow deposition rate, and the use of toxic hydrazine monohydrate as the reaction source, and proposes a method of adding koji to the ammonia water system. Method for preparing Zn(S,O) thin film by using Latong as surfactant

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  • Method for preparing Zn(S,O) polycrystalline film
  • Method for preparing Zn(S,O) polycrystalline film

Examples

Experimental program
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Embodiment 1

[0018] First put the substrate into acetone, clean it with ultrasonic wave for 15 minutes, then put the substrate into absolute ethanol, clean it with ultrasonic wave for 15 minutes, then put the substrate into deionized water and clean it with ultrasonic wave for 15 minutes, and finally put the substrate into the oven Dry in medium. Weigh 0.6972g of zinc acetate solid and 8.67768g of thiourea solid, add to 300ml of deionized water and dissolve to obtain a mixed solution containing 0.01mol / L zinc ion and 0.3mol / L sulfide ion. Add 60ml of Triton solution with a concentration of 5mmol / L into the beaker containing the mixed solution, and heat it in a constant temperature water bath at 70°C. When the temperature of the solution in the beaker reaches 60°C, insert the substrate into the polytetrafluoroethylene frame and immerse it into the beaker, and add 20ml of ammonia solution with a concentration of 14.82mol / L to the mixed solution in the beaker, and finally cover the mouth of t...

Embodiment 2

[0020] First put the substrate into acetone, clean it with ultrasonic wave for 15 minutes, then put the substrate into absolute ethanol, clean it with ultrasonic wave for 15 minutes, then put the substrate into deionized water and clean it with ultrasonic wave for 15 minutes, and finally put the substrate into the oven Dry in medium. Weigh 0.6972g of zinc acetate solid and 8.67768g of thiourea solid, add to 300ml of deionized water and dissolve to obtain a mixed solution containing 0.01mol / L zinc ion and 0.3mol / L sulfide ion. Add 60ml of Triton solution with a concentration of 5mmol / L into the beaker containing the mixed solution, and heat it in a constant temperature water bath at 80°C. When the temperature of the solution in the beaker reaches 70°C, insert the substrate into the polytetrafluoroethylene frame and immerse it into the beaker, and add 20ml of ammonia solution with a concentration of 14.82mol / L to the mixed solution in the beaker, and finally cover the mouth of t...

Embodiment 3

[0022]First put the substrate into acetone, clean it with ultrasonic wave for 15 minutes, then put the substrate into absolute ethanol, clean it with ultrasonic wave for 15 minutes, then put the substrate into deionized water and clean it with ultrasonic wave for 15 minutes, and finally put the substrate into the oven Dry in medium. Weigh 0.6972g of zinc acetate solid and 8.67768g of thiourea solid, add to 300ml of deionized water and dissolve to obtain a mixed solution containing 0.01mol / L zinc ion and 0.3mol / L sulfide ion. Add 60ml of Triton solution with a concentration of 5mmol / L into the beaker containing the mixed solution, and heat it in a constant temperature water bath at 90°C. When the temperature of the solution in the beaker reaches 80°C, insert the substrate into the polytetrafluoroethylene frame and immerse it into the beaker, and add 20ml of ammonia solution with a concentration of 14.82mol / L to the mixed solution in the beaker, and finally cover the mouth of th...

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Abstract

Provided is a method for preparing a Zn(S,O) polycrystalline film. Chemical water-bath sedimentation is used for preparation. A reaction solution is prepared from zinc salt, such as zinc acetate and zinc sulfate, thiourea and ammoniacal liquor, Triton serves as a surfactant, the temperature of the reaction solution is 70-90 DEG C, the reaction time is 20-200min, and the needed Zn(S,O) polycrystalline film is obtained finally.

Description

technical field [0001] The invention relates to a method for preparing a solar cell Zn(S,O) polycrystalline thin film. Background technique [0002] Such as copper indium gallium selenide (Cu(In x Ga 1-x ) Se 2 Thin-film solar cells such as CIGS) and cadmium telluride (CdTe) have the advantages of high conversion efficiency, low cost, high stability, flexible cells can be prepared, and can be used in building integration, etc., and have become an important way to utilize solar energy. In the past three years, the conversion efficiency of CIGS thin-film solar cells has increased by 0.7% every year, and the theoretical conversion efficiency of CIGS solar cells with a band gap of 1.14eV can reach 33.5%, while the highest efficiency in the laboratory has reached 22.6% (Jackson Philip, Wuerz Roland , Hariskos Dimitrios, Lotter Erwin, Witte Wolfram, Powalla Michael, Effects of heavy alkaline elements in Cu(In,Ga)Se 2 Solar cells with efficiencies up to 22.6%, Physica Status So...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/18H01L21/368C23C18/00
CPCC23C18/00H01L21/02557H01L21/02628H01L31/18Y02P70/50
Inventor 李辉林新璐屈飞古宏伟王文静
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI