High glass transition temperature hole injection material and its preparation and application

A hole injection material, transition temperature technology, applied in the preparation of organic compounds, preparation of aminohydroxy compounds, organic chemistry, etc., can solve the requirements of high solubility of materials, thermal stability can not meet the application requirements of OLED devices, glass problems such as low transition temperature, to achieve the effects of good solubility, good hole transport ability, and simple method

Active Publication Date: 2021-03-30
SOUTH CHINA UNIV OF TECH
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The glass transition temperature (T g ≈67℃) is still relatively low, and the thermal stability cannot meet the application requirements of OLED devices
[0004] In addition, in perovskite solar cells, since perovskite solar cells are mainly prepared by solution processing spin coating method, not only good hole mobility and suitable HOMO energy level are required for hole transport materials, but also the material Therefore, there are few organic hole transport materials suitable for perovskite solar cells at present.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High glass transition temperature hole injection material and its preparation and application
  • High glass transition temperature hole injection material and its preparation and application
  • High glass transition temperature hole injection material and its preparation and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] The structural formula of the hole injection material of this embodiment is specifically as follows:

[0055]

[0056] The preparation method of the hole injection material XL1 with a high glass transition temperature in this embodiment includes the following steps:

[0057] Step 1: Preparation of 6-bromo-N,N-bis(4-methoxyphenyl)-2-naphthylamine (compound 1), the reaction equation is as follows:

[0058]

[0059] Dissolve p-iodoanisole (15g, 0.064mol) and 6-bromo-2-naphthylamine (3.3g, 0.015mol) in 120ml of anhydrous toluene, and quickly add CuI (0.89g, 4.67mmol) under nitrogen atmosphere, 1,10-Phenanthroline (1.232g, 6.83mmol) and sodium tert-butoxide (7g, 75mmol) were heated to 120°C, reacted for about 48h, concentrated to remove toluene, added dichloromethane and distilled water for extraction (dichloromethane and The volume ratio of distilled water is 1:1), the organic layer is dried over anhydrous magnesium sulfate, filtered, concentrated under reduced press...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
glass transition temperatureaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to view more

Abstract

The invention belongs to the technical field of photoelectric materials, and discloses a hole injection material with a high glass transition temperature and its preparation and application. The structure of the hole injection material is shown in Formula I. The method: (1) react p-iodoanisole and 6-bromo-2-naphthylamine to obtain formula II compound 6-bromo-N, N-two (4-methoxyphenyl)-2-naphthalene Amine; (2) reacting the compound of formula II and double pinacol borate to obtain the compound of formula III; (3) reacting the compound of formula II and compound of formula III to obtain the hole injection material. The hole injection material of the invention has high glass transition temperature and decomposition temperature, high HOMO energy level, good hole mobility, and is beneficial to hole injection and transport. The hole injection material provided by the invention has important application prospects in photoelectric devices.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, and relates to organic small molecule hole injection materials, in particular to a binaphthyl-based high glass transition temperature hole injection material and its preparation method and application in photoelectric devices. Background technique [0002] Organic light-emitting diodes (OLEDs) have important application prospects in the fields of display and lighting. It is of great significance to develop organic functional materials with high glass transition temperature and high performance OLED. [0003] The glass transition temperature (T g ≈67°C) is still relatively low, and the thermal stability cannot meet the application requirements of OLED devices. [0004] In addition, in perovskite solar cells, since perovskite solar cells are mainly prepared by solution processing spin coating method, not only good hole mobility and suitable HOMO energy level are required for hole ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C07C217/84C07C213/08H01L51/50H01L51/54
CPCC07C217/84H10K85/631H10K85/626H10K85/633H10K50/17
Inventor 朱旭辉黄小兰彭俊彪曹镛
Owner SOUTH CHINA UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap