Boron-nitrogen co-doped diamond electrode and preparation method and application thereof
A diamond electrode and co-doping technology, which is applied in the direction of electrodes, electrolytic processes, and electrolytic components, can solve the problems of low surface active sites, weak electrocatalytic activity, and large diffusion resistance, and achieve improved electrocatalytic work efficiency and high Effect of hydrogen evolution and oxygen evolution potential, wide potential window
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[0035] see image 3 , the embodiment of the present invention provides a method for preparing a boron-nitrogen co-doped diamond electrode 100, comprising the following steps:
[0036] Step 1: taking the base body 1, sandblasting the base body 1, and cleaning the sand blasted base body 1;
[0037]Step 2: Depositing an initial boron-nitrogen co-doped diamond layer on the cleaned substrate 1 to obtain the substrate 1 with an initial boron-nitrogen co-doped diamond layer 2 on the surface;
[0038] Step 3: Etching the surface layer 2 of the initial boron-nitrogen co-doped diamond layer to obtain a boron-nitrogen co-doped diamond layer, that is, to obtain a boron-nitrogen co-doped diamond electrode, and the boron-nitrogen co-doped diamond electrode includes a substrate , a boron-nitrogen co-doped diamond layer arranged on the surface of the substrate, the boron-nitrogen co-doped diamond layer comprising a flat structure layer arranged on the surface of the substrate and an array pr...
Embodiment 1
[0052] A method for preparing a boron-nitrogen co-doped diamond electrode, comprising the following steps:
[0053] Step 1: Take the titanium substrate, and after sandblasting the titanium substrate, ultrasonically clean the titanium substrate in acetone and alcohol for 10 minutes respectively. Then place the titanium substrate in an acidic solution of sulfuric acid and hydrogen peroxide with a volume ratio of 1:15, heat it to 100°C, and soak for 30 minutes. Remove surface oxides and cause certain defects for subsequent deposition, and then use deionized water to ultrasonically clean for 10 minutes. Subsequently, the acid-washed titanium substrate was placed in the suspension of nano-diamond powder for ultrasonic treatment for 1 hour.
[0054] Step 2: Deposit a boron-nitrogen co-doped diamond layer on the cleaned titanium substrate by hot wire chemical vapor deposition. During the preparation process, the gases introduced include nitrogen, methane, trimethylborane and hydroge...
Embodiment 2
[0057] A method for preparing a boron-nitrogen co-doped diamond electrode, comprising the following steps:
[0058] Step 1: Take the silicon substrate, and ultrasonically clean the silicon substrate in acetone and alcohol for 10 minutes respectively. Then place the silicon substrate in an alkaline solution of hydrogen peroxide, ammonium hydroxide and water with a volume ratio of 1:1:5-10, heat to 80°C, and soak for 30 minutes. Remove surface oxides and cause certain defects for subsequent deposition, and then use deionized water to ultrasonically clean for 10 minutes. Then the alkali-washed silicon substrate was placed in nano-diamond powder suspension and ultrasonically treated for 2 hours.
[0059] Step 2: Deposit a boron-nitrogen co-doped diamond layer on the cleaned silicon substrate by hot wire chemical vapor deposition. During the preparation process, the gases introduced include nitrogen, methane, trimethylborane and hydrogen, nitrogen The flow rate was 124 sccm, the ...
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