Method for moving and transferring nanowire by using micron-diameter tapered hair

Abstract

The present invention provides a method for moving and transferring a nanowire by using a micron-diameter tapered hair. The diameter of the nanowire ranges from 60 to 150 nm; the diameter of the tapered hair ranges from 1 to 100 microns, and the radius of curvature of the tip of the tapered hair ranges from 0.8 to 3 microns, and the length of the tapered hair ranges from 4 to 10 mm; a plastic filmon a copper mesh for a transmission electron microscope is removed with the copper mesh left, the diameter of the holes of the copper mesh ranging from 50 to 100 microns; the copper mesh which has been subjected to ultrasonic treatment is adopted to salvage the nanowire in an acetone liquid for the ultrasonic dispersion of the nanowire; the copper mesh on which the nanowire is distributed and thetapered hair are arranged on the movement platforms of two different optical microscopes respectively; the millimeter and micrometer-level movement of the taper hair is realized, and therefore, the movement and transfer operation of the nanowire can be realized; and the tip of the tapered hair is adopted to a small droplet of conductive silver paste and drip the conductive silver paste at two ends of the nanowire, and the radius of the dripped conductive silver paste ranges from 4 to 8 microns. According to the method for moving and transferring the nanowire by using the micron-diameter tapered hair of the present invention, the movement platforms of the two optical microscopes are adopted to realize the movement and transfer of the nanowire by using the tapered hair.

Description

technical field [0001] A method of moving and transferring nanowires with micrometer-diameter tapered hairs, involving the movement, transfer and fixation of nanowires, which has an important impact on subsequent testing and characterization, especially involving in-situ nanomechanical testing by scanning electron microscopy and transmission electron microscopy and characterization. Background technique [0002] High-performance equipment requires the surface of high-performance parts to have nano-level flatness and sub-nanometer roughness. This demanding ultra-precision processing requirement is close to the limit of physical processing, and new ultra-precision processing technology and equipment need to be developed to solve it. Nano-precision surface fabrication methods are an effective way to meet such demanding processing requirements. In order to develop new nano-precision surface manufacturing processes and methods, it is necessary to study the mechanism of atomic-sc...

AI Technical Summary

Problems solved by technology

In-situ nanomechanics by transmission electron microscopy is a scientific method to study this basic principle. In the past, due to the limitation of experimental conditions, it was difficult to test and characterize in-situ nanomechanics by transmission electron microscopy.

One of the important reasons is that the use of focused ion beams and electron beams to cut, weld, transfer, and move nanowires will cause pollution and damage to nanowires.

These two methods generally use chemical vapor deposition or physical vapor deposition when fixing nanowires, which is easy to contaminate the nanowires, which will seriously affect the subsequent in-situ testing and characterization, or even make it impossible, and it is difficult to obtain atomic-scale high resolved TEM image

In addition, during the process of moving and transferring the nanowires by these two methods, defects such as holes, interstitial atoms, stacking faults, and dislocation loops are easily generated inside the nanowires, which makes scanning and transmission electron microscopy obtained at the micro-nano scale difficult. Mirroring is difficult to extend to macroscopic materials

[0003] In order to eliminate the pollution and damage to nanowires caused by traditional focused ion beams and electron beams during the process of moving, transferring, cutting, welding and fixing nanowires, it is urgent to develop a new method for moving, transferring and fixing nanowires. It brings convenience to the subsequent in-situ nanomechanical testing and characterization of scanning electron microscopy and transmission electron microscopy, thereby eliminating the pollution and damage caused by traditional focused ion beam and electron beam operations on nanowires

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