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Large-area CVD graphene doping and transferring method

A transfer method, graphene technology, applied in graphene, chemical instruments and methods, inorganic chemistry, etc., can solve problems affecting graphene quality, continuous graphene film wrinkles, and low mechanical strength of PMMA film, etc., to achieve high efficiency and uniformity Effects of stabilizing doping, inhibiting dopant migration, and ensuring transfer integrity

Active Publication Date: 2018-06-01
CHONGQING GRAPHENE TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

During the two transfer operations, the continuous graphene film will be wrinkled and damaged to varying degrees, seriously affecting the quality of graphene
For example, the PMMA wet transfer method that is often used, due to the low mechanical strength of the PMMA film, will inevitably lead to wrinkles and breakage during the batch transfer process; in the thermal peeling tape transfer method, the problems of bonding pores and non-uniform release will inevitably cause damage to the graphene structure.
These microscopic continuous structural defects greatly reduce the electrical properties of graphene such as carrier mobility.

Method used

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  • Large-area CVD graphene doping and transferring method

Examples

Experimental program
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Effect test

Embodiment 1

[0056] S1. Generate a CVD graphene layer 201 with a two-dimensional continuous structure on the copper foil of the catalytic substrate 101 by the CVD method to obtain a composite structure of copper foil and graphene layer;

[0057] S2. Mix the resin with the main chain of polyethylene oxide and the end group of acrylate with the bifunctional acrylate monomer, and coat it on the CVD graphene layer 201 obtained in step S1, and cure by ultraviolet light irradiation to form a doped Miscellaneous agent absorption layer 301. The formed dopant absorption layer 301 has a thickness of 3 μm, a cross-linking degree of 40%, and a saturated swelling degree in water of 10%;

[0058] S3. Depositing a transfer support layer 302 made of poly 2,5-dichloro-para-xylene on the dopant absorption layer 301 formed in step S2 at a temperature of 40°C by the CVD method, with a thickness of 5 μm, and water vapor permeable Over rate is 0.3g / (m 2 ·Day);

[0059] S4. Separate the copper foil catalytic substrat...

Embodiment 2

[0068] S1. Generate a graphene layer with a two-dimensional continuous structure on the copper foil of the catalytic substrate 101 by the CVD method to obtain a composite structure of copper foil / graphene layer;

[0069] S2. Mixing polyvinyl alcohol and diisocyanate, coating on the CVD graphene layer 201 obtained in step S1, and curing by heating to form a dopant absorption layer 301. The formed dopant absorption layer 301 has a thickness of 1 μm, a crosslinking degree of 60%, and a saturated swelling degree in water of 1%;

[0070] S3. Depositing a transfer support layer 302 made of parylene on the dopant absorption layer 301 formed in step S2 at a temperature of 40°C by the CVD method with a thickness of 0.5μm and a water vapor transmission rate of 0.9g / (m 2 ·Day);

[0071] S4. Separate the copper foil catalytic substrate 101 to obtain a composite structure of a CVD graphene layer 201, a cross-linked polyvinyl alcohol dopant absorption layer 301, and a parylene transfer support l...

Embodiment 3

[0080] S1. Generate a VCD graphene layer 201 with a two-dimensional continuous structure on the copper foil of the catalytic substrate 101 by the CVD method to obtain a composite structure of copper foil / graphene layer;

[0081] S2. Mixing methyl cellulose and diisocyanate, coating on the CVD graphene layer 201 obtained in step S1, and curing by heating to form a dopant absorption layer 301. The formed dopant absorbing layer 301 has a thickness of 0.1 μm, a cross-linking degree of 50%, and a saturated swelling degree in water of 4%;

[0082] S3. Depositing a transfer support layer 302 made of poly-3-chloroparaxylene on the dopant absorption layer 301 formed in step S2 at a temperature of about 40°C by the CVD method, with a thickness of 1 μm, and a water vapor transmission rate 0.8g / (m 2 ·Day);

[0083] S4. Separate the copper foil catalytic substrate 101 to obtain a composite structure of a CVD graphene layer 201, a cross-linked cellulose dopant absorption layer 301, and a poly-3-c...

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Abstract

The invention discloses a large-area CVD graphene doping and transferring method which can ensure the stable doping effect of CVD graphene and can avoid the transferring damage. The method comprises the following steps: S1, growing a CVD graphene layer on a catalytic substrate; S2, forming a dopant absorption layer on the CVD graphene layer; S3, forming a transferring supporting layer on the dopant absorption layer; S4, separating the catalytic substrate; S5, rotating a composite structure of the CVD graphene layer, the dopant absorption layer and the transferring supporting layer obtained inS4 for 180 degrees, and then placing on a target substrate; S6, soaking the composite structure obtained in S5 in a doping aqueous solution; and S7, cleaning and drying the composite structure soakedin S6. By adopting the large-area CVD graphene doping transferring method, the graphene layer can be efficiently, uniformly and stably doped; and the effective supporting protection can be provided inthe transferring process, the damage of a graphene membrane is avoided, and the transferring completeness of the large-area CVD graphene layer is ensured.

Description

Technical field [0001] The invention relates to the technical field of graphene production, in particular to a large-area CVD graphene doping transfer method. Background technique [0002] As we all know: since its discovery in 2004, graphene has continuously aroused an upsurge of research and investment in academia and industry. Graphene has significant unique advantages in mechanical, thermal, optical, electrical and other properties, especially electrical properties. The combination of flexibility and transparency combined with ultra-high electrical conductivity makes it present unlimited development prospects in the emerging electronics field. [0003] A variety of graphene preparation methods have been developed, and the CVD method is a recognized method suitable for preparing large-area, high-quality, continuous graphene films. However, the graphene prepared by the CVD method is attached to the metal substrate. In the actual application process, it is often necessary to dope...

Claims

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Application Information

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IPC IPC(8): C01B32/182C01B32/184C01B32/194
Inventor 马金鑫姜浩徐鑫
Owner CHONGQING GRAPHENE TECH
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