MgB2 Josephson junction and fabrication method thereof

A technology of magnesium diboride and boride, applied in the direction of devices including a node of different materials, manufacturing/processing of superconductor devices, superconducting devices, etc. Repeatability influence, complex preparation process and other issues, to achieve the effect of good repeatability, precise and controllable experimental parameters, and flexible preparation process

Inactive Publication Date: 2018-06-22
INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the preparation process is particularly complicated, and the water in the photolithography process leads to MgB 2 Degradation of film properties, which makes process repeatability vulnerable
Through the

Method used

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  • MgB2 Josephson junction and fabrication method thereof
  • MgB2 Josephson junction and fabrication method thereof
  • MgB2 Josephson junction and fabrication method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] The preparation of the precursor film in this embodiment is completed in the ZZXS-500 electron beam coating machine, the focused ion beam etching equipment is FEI 820 DualBeam type focused ion beam / electron beam dual beam system (Focused Ion Beam, FIB), and the electron beam annealing is in It is carried out on a self-made EBW-3H electron beam welding machine, the substrate is 6H-SiC (0001), and the size is 3mm×5mm.

[0031] 1. Preparation of precursor film:

[0032] 1) Fix a 6H-SiC bare substrate with a size of 3mm×5mm on the sample workpiece table of the coating machine;

[0033] 2) closing the reaction chamber and evacuating the reaction chamber;

[0034] 3) Wait until the vacuum degree of the reaction chamber reaches 5×10 -5 After Pa, select the electron beam voltage of 7kV, the electron beam current of 50mA, and turn on the electron gun power supply;

[0035] 4) Deposit Mg film 15nm, deposit B film 10nm, alternately deposit 4 layers of magnesium film and 4 layer...

Embodiment 2

[0043] The preparation of the precursor film in this embodiment is completed in the ZZXS-500 electron beam coating machine, the focused ion beam etching equipment is FEI 820 DualBeam type focused ion beam / electron beam dual beam system (Focused Ion Beam, FIB), and the electron beam annealing is in It is carried out on a self-made EBW-3H electron beam welding machine, the substrate is 6H-SiC (0001), and the size is 3mm×5mm.

[0044] 1. Preparation of precursor film:

[0045] 1) Fix a 6H-SiC substrate with a size of 3mm×5mm on the sample workpiece table of the coating machine;

[0046] 2) closing the reaction chamber and evacuating the reaction chamber;

[0047] 3) Wait until the vacuum degree of the reaction chamber reaches 5×10 -5 After Pa, select the electron beam voltage of 7kV, the electron beam current of 80mA, and turn on the electron gun power supply;

[0048] 4) Deposit Mg film 15nm, deposit B film 10nm, alternately deposit 4 layers of magnesium film and 4 layers of ...

Embodiment 3

[0056] The preparation of the precursor film in this example is completed in the ZZXS-500 electron beam coating machine. The focused ion beam etching equipment is FEI820DualBeam focused ion beam / electron beam dual beam system (Focused Ion Beam, FIB). -3H type electron beam welding machine, the substrate is 6H-SiC (0001), and the size is 3mm×5mm.

[0057] 1. Preparation of precursor film:

[0058] 1) Fix a 6H-SiC bare substrate with a size of 3mm×5mm on the sample workpiece table of the coating machine;

[0059] 2) closing the reaction chamber and evacuating the reaction chamber;

[0060] 3) Wait until the vacuum degree of the reaction chamber reaches 5×10 -5 After Pa, select the electron beam voltage of 7kV, the electron beam current of 100mA, and turn on the electron gun power supply;

[0061] 4) Deposit Mg film 15nm, deposit B film 10nm, alternately deposit 4 layers of magnesium film and 4 layers of boron film according to this order, the thickness ratio of magnesium film...

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Abstract

The invention relates to an MgB2 Josephson junction and a fabrication method thereof. The MgB2 Josephson junction is of an MgB2/barrier layer/MgB2 structure, a barrier layer between an upper MgB2 superconduction layer and a lower MgB2 superconduction layer comprises a high-boron compound of boron or magnesium, the MgB2 layer is a superconduction layer, a groove is etched in the center of a boron layer between the upper MgB2 superconduction layer and the lower MgB2 superconduction layer, and a junction region barrier layer is arranged at the bottom of the groove. The maximum energy gap of the MgB2 Josephson junction at 20K reaches 1.17meV, and the working frequency reaches 500GHz. Rapid annealing is performed on an electronic beam in vacuum to obtain the MgB2 Josephson junction; a precursorfilm of the MgB2 Josephson junction is obtained by an electronic beam evaporation method and focusing ion beam etching, the precursor film is annealed within time within several second order of magnitude, so that magnesium and boron in the precursor film react to obtain the Josephson junction; and different types of Josephson junction can be obtained from the MgB2 Josephson junction after annealing according to different focusing ion beam etching processes.

Description

technical field [0001] The invention relates to a magnesium diboride Josephson junction and a preparation method thereof. Background technique [0002] Today's electronic devices are developing in the direction of miniaturization, high integration and high frequency. As the basic unit in superconducting electronics, Josephson junction is the core component of superconducting electronics applications such as superconducting quantum interferometer (SQUID) and superconducting digital circuits. Due to the outstanding advantages of Josephson junction devices such as strong nonlinear effect, high operating frequency, quantum limit sensitivity, small size, strong anti-interference ability, and low power consumption, it is used in weak magnetic field measurement, high-frequency signal detection, voltage reference, Fields such as quantum communication and quantum computing have important and even irreplaceable applications. High critical transition temperature, large coherence leng...

Claims

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Application Information

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IPC IPC(8): H01L39/22H01L39/24
CPCH10N60/126H10N60/0856H10N60/0912
Inventor 许壮孔祥东韩立高召顺李艳丽门勇
Owner INST OF ELECTRICAL ENG CHINESE ACAD OF SCI
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