Silicified diamond/SiC composite material preparation method

A composite material and diamond technology, which is applied in the field of diamond particle reinforced composite materials, can solve the problems of high equipment requirements, high production costs, high pressure conditions, etc., and achieve the effects of improving interface bonding, increasing production efficiency, and reducing production costs

Inactive Publication Date: 2018-07-06
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The high temperature and high pressure method mainly uses diamond and silicon particles as raw materials, and uses high temperature and high pressure means to press and form. The composite materials prepared by this method generally have high density and thermal conductivity,

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0025] Weigh 14g of diamond single crystal particles, soak them in absolute ethanol for 40 minutes, and disperse them by ultrasonic cleaning, then dry the diamond particles, then weigh 3g of silicon powder, mix it with diamond particles, and put them in a mortar Grinding for 60 minutes, and then putting the mixture into a crucible for sintering in a vacuum sintering, using an argon protective atmosphere during sintering, the sintering temperature is 1650°C, and the time is 90 minutes, thereby obtaining surface silicided diamond particles. Then weigh 5g of silicon powder, 6g of graphite, and 3g of phenolic resin, dissolve the phenolic resin with absolute ethanol, then put in weighed silicon powder and graphite and stir evenly, then put in silicified diamond particles, heat and stir, When the mixture becomes a paste, it is put into a ball mill tank, and mixed on a mixer for 10 hours, and the mixer speed is 1800r / min. After the mixing is finished, take out the mixture, wash it wi...

example 2

[0027] Weigh 10g of diamond and 3g of silicon powder respectively, soak them in acetone for 1 min, then dry them, put the mixed powder into a mortar, grind for 60 min, and then put the mixed particles into a vacuum sintering furnace for sintering under vacuum conditions , the sintering temperature is 1650°C, the time is 60min, the sintering is completed, and the surface siliconized diamond particles are obtained. Then, weigh 4g of silicon powder, 5g of graphite, and 3g of polypropylene, mix the three, add acetone, heat and stir evenly, and then add The prepared silicified diamond particles are stirred into a paste, and then the paste mixture is mixed on a mixer, the mixer speed is 2000r / min, and the time is 16h. After the mixing is completed, the mixture is cleaned and dried, and then 1000 mesh screen Sieve evenly, then weigh 2g of the mixed particles and press at 50MPa at 1000°C to form a cuboid green body with an area of ​​10mm×50mm. The pressed body was degreased in a tube ...

example 3

[0029] Weigh 16g of diamond single crystal particles, soak them in absolute ethanol for 40min, and disperse them by ultrasonic cleaning, then dry the diamond particles, then weigh 4g of silicon powder, mix it with diamond particles, and put them in a mortar Grind for 60 minutes, then put the mixture into a crucible for sintering in vacuum sintering, use argon gas protection atmosphere during sintering, sintering temperature 1700 ° C, time 90 minutes, thus obtaining diamond particles with siliconized surface Mix phenolic resin and acetone solution, and heat Make it dissolve completely, then mix the silicon powder and silicon-modified diamond, and stir until it becomes a paste. Wherein the weight percentages of phenolic resin, silicon powder, graphite and modified diamond are 15%, 17%, 13% and 55% respectively. Then the mixture was put into a ball mill jar and mixed on a mixer at 1000r / min for 5 hours. After the mixing is completed, the ball mill tank is cleaned with acetone, a...

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Abstract

The invention discloses a silicified diamond/SiC composite material preparation method, which belongs to the field of electronic packaging materials. Diamond particles and silicon powder are firstly subjected to wet mixing, sintering is carried out after thorough grinding, the diamond surface and the silicon powder react, and a layer of silicon carbide coating is generated; then, the diamond particles with the surface coated with the silicon carbide and the silicon powder are mixed, an organic binder is added at the same time, grinding is carried out, mixing on a mixer is carried out, and uniform composite particles are obtained; the composite particles are subjected to prepressing and debinding and are transferred to a vacuum infiltration furnace, a silicon burial method is adopted for vacuum infiltration, and a compact diamond/SiC composite material is prepared. The silicon powder is adopted to modify the diamond particles, the interfacial bonding between diamond and silicon is improved, the compactness of the obtained diamond/SiC composite material is more than 95%, the hardness is above HRA 80, the bending strength exceeds 200 MPa, the thermal conductivity reaches 600 W/mK, andthe thermal expansion coefficient 1.5 to 4*10<-6>/K. Thus, multiple products with complex characters, complex curvature and large size can be prepared at one time, the production efficiency is high,and the cost is low.

Description

technical field [0001] The invention belongs to the field of electronic packaging materials and relates to a diamond particle reinforced composite material for electronic packaging. The diamond / SiC / Si composite material prepared by this method is a new type of electronic packaging material with high density, high thermal conductivity and low thermal expansion, and has great market potential in the manufacture and production of integrated circuit substrates. Background technique [0002] Electronic packaging materials are the main constituent materials of integrated circuits. With the rapid development of electronic technology, the development of integrated circuits, large-scale and ultra-large-scale integrated circuits has become an important symbol of the development of electronic technology. At the same time, the rapid development of integrated circuits has led to higher requirements for the efficiency of electronic components. The requirements, especially for the thermal...

Claims

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Application Information

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IPC IPC(8): H01L23/29H01L23/373
CPCH01L23/29H01L23/3732
Inventor 何新波郑伟吴茂曲选辉
Owner UNIV OF SCI & TECH BEIJING
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