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A kind of preparation method of aluminum nitride bottom plate and copper heat sink composite body

An aluminum nitride and composite technology, which is applied to semiconductor devices, electric solid-state devices, semiconductor/solid-state device components, etc., can solve the problems of unfavorable heat dissipation and cooling, small effective specific surface area for heat dissipation, etc. Beneficial for heat transfer

Active Publication Date: 2020-04-17
HARBIN AURORA OPTOELECTRONICS TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The effective heat dissipation specific surface area of ​​this connection is very small, when the power of the device increases, it is not conducive to heat dissipation and cooling

Method used

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  • A kind of preparation method of aluminum nitride bottom plate and copper heat sink composite body

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] The copper heat sink was cleaned sequentially with acetone, ethanol and deionized water to remove the organic layer on the surface. The powder of the polymer baffle with nanopores is dispersed in the aqueous solution to form a suspension, and the powder is uniformly dispersed by ultrasonic vibration. Draw up the suspension with a rubber dropper, and drop it into the sawtooth of the copper heat sink and on the surface of the copper heat sink several times. Put the copper heat sink into the vacuum oven, under the vacuum of 120 o C baked for 2 hours, after removing moisture, the polymer baffle was adsorbed on the copper surface. Use solder to connect the copper heat sink and the wire to make the electrode, and immerse the copper heat into the electrolyte, which is 0.1 M CuSO 4 + 1 MH 2 SO 4 mixture. Connect the copper heat sink electrode with the CHI660D electrochemical workstation, use Ag / AgCl as the reference electrode, and platinum sheet as the counter electrode....

Embodiment 2

[0023] The copper heat sink was cleaned sequentially with acetone, ethanol and deionized water to remove the organic layer on the surface. The powder of the polymer baffle with nanopores is dispersed in the aqueous solution to form a suspension, and the powder is uniformly dispersed by ultrasonic vibration. Draw up the suspension with a rubber dropper, and drop it into the sawtooth of the copper heat sink and on the surface of the copper heat sink several times. Put the copper heat sink into the vacuum oven, under the vacuum of 120 o C baked for 2 hours, after removing moisture, the polymer baffle was adsorbed on the copper surface. Use solder to connect the copper heat sink and the wire to make the electrode, and immerse the copper heat into the electrolyte, the electrolysis is 0.2 M CuSO 4 + 1.5 MH 2 SO 4 mixture. Connect the copper heat sink electrode with the CHI660D electrochemical workstation, use Ag / AgCl as the reference electrode, and platinum sheet as the count...

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Abstract

The invention relates to a preparation method of an aluminium nitride bottom plate and copper heat sink complex. According to the preparation method, the surface of aluminium nitride is oxidized intoaluminum oxide; next, a polymer baffle with nanometer holes is adopted to prepare aluminum oxide nanometer holes in an acid condition; a same baffle is adopted on the surface of copper heat sink to prepare copper nanowires which are complementary with the aluminum oxide nanometer holes through an electrochemical method; and through a DBC (direct bonded copper) method, two nanomaterial layers are bonded to form a complex. Compared with the conventional packaging process, the complex bottom plate is directly bonded with the heat sink; and in addition, two nanowire material layers are provided, so that the heat dissipation specific surface area is greatly enlarged, and the heat dissipation requirement of a silicon carbide power device can be better satisfied.

Description

technical field [0001] The invention relates to a preparation method of an aluminum nitride and copper heat sink complex with a heat dissipation surface of nanomaterials, in particular to a method for connecting an aluminum nitride base plate and a copper heat sink in the field of silicon carbide power device packaging . Background technique [0002] Power semiconductor devices refer to electronic devices that are directly used for conversion or control in power circuits. Currently, the main material of power semiconductor devices is silicon. However, as people's demand for electricity continues to expand, the conditions of use of silicon power devices have reached their limits, prompting researchers to look for new alternative materials. Silicon carbide material is the third generation wide bandgap semiconductor material. Compared with silicon material, it has the advantages of high critical breakdown electric field (high working voltage), high thermal conductivity, high ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/14H01L23/367
CPCH01L23/14H01L23/367
Inventor 左洪波杨鑫宏李岩李铁王芳
Owner HARBIN AURORA OPTOELECTRONICS TECH
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