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Preparation method of ultraviolet LED chip

A LED chip and ultraviolet technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as low efficiency, achieve high thermal conductivity, increase light extraction function, and prevent damage

Inactive Publication Date: 2018-07-27
SUZHOU NANER MATERIAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the deep ultraviolet band, the efficiency of the above three aspects is relatively low

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0039] Put the silicon substrate into a mixed solution of hydrofluoric acid and deionized water with a volume ratio of 1:15 and sonicate for 3 minutes to remove oxides and sticky dirt particles on the surface of the silicon substrate, then put it into deionized water and sonicate for 3 minutes to remove Surface impurities, blow dry with dry nitrogen.

[0040] Using the chemical vapor deposition method of metal organic compounds, at 540 ° C, the pressure of the reaction chamber is maintained at 350 mbar, and the flow rate of NH is 10000 sccm 3 , 60sccm TMGa, 140L / min H 2 1. A buffer layer GaN with a thickness of 20 nm is grown on the substrate.

[0041] Reversely grow a deep ultraviolet epitaxial structure on the surface of the buffer layer GaN; specifically adopt the following steps to form a deep ultraviolet epitaxial structure: use a metal-organic chemical vapor deposition method to form an InGaN insertion layer and an AlInGaN superlattice on the surface of the buffer layer...

Embodiment 2

[0061] Put the silicon substrate into a mixed solution of hydrofluoric acid and deionized water with a volume ratio of 1:15 and sonicate for 5 minutes to remove oxides and sticky dirt particles on the surface of the silicon substrate, and then put it into deionized water for 5 minutes to remove Surface impurities, blow dry with dry nitrogen.

[0062] Using the chemical vapor deposition method of metal organic compounds, at 560 ° C, the pressure of the reaction chamber is maintained at 450 mbar, and the flow rate of NH is 16000 sccm 3 , 60sccm-80sccm TMGa, 140L / min-160L / min H 2 1. Growing a buffer layer GaN with a thickness of 30 nm on the substrate.

[0063] Reversely grow a deep ultraviolet epitaxial structure on the surface of the buffer layer GaN; specifically adopt the following steps to form a deep ultraviolet epitaxial structure: use a metal-organic chemical vapor deposition method to form an InGaN insertion layer and an AlInGaN superlattice on the surface of the buffer...

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PUM

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Abstract

The invention discloses a preparation method of an ultraviolet LED chip. A silicon substrate cleaned through a special process is adopted in the method; an operation of etching and removing a GaN layer in large area is unnecessary, the process difficulty is reduced, and the light extraction efficiency of the GaN layer is further improved; in the growth process of an epitaxial layer, a high-qualityquaternary AlInGaN material with uniform component and low defect density is prepared so as to form a InGaN / AlxInyGa1-x-yN multi-quantum well structure layer, thereby enabling the lattice constants of the potential barrier and the potential well layer material of the quantum-well structure to be completely matched; the three-color fluorescent colloid in red, blue and green is excited by using ultraviolet light so as to be used as a protective layer of the LED chip; the used colloid is hard to be decomposed by the ultraviolet and the ozone, the double-bond is inexistent, the chemical bond of the molecule cannot break under high temperature, and the cured colloid is colorless and transparent colloid; and the used colloid has a certain adhesion performance and good sealing for the PPA and the metal, and has excellent electric insulation performance and good sealing.

Description

technical field [0001] The invention relates to a method for preparing an LED, in particular to a method for preparing an ultraviolet LED chip. Background technique [0002] Light-emitting diode (Light-Emitting Diode, LED) is a new type of energy-saving and environmentally friendly solid-state lighting source, which has the advantages of high energy efficiency, small size, light weight, fast response and long life, making it widely used in many fields. [0003] Today, III-V semiconductor materials are booming and have entered people's lives in many fields. Among them, GaN, as an important material for preparing high-efficiency LEDs, has attracted many people's attention. Compared with traditional materials, GaN, as a representative of the third-generation semiconductor materials, has excellent physical and chemical properties, such as: wide band gap, good thermal stability, high electron mobility, and a direct band gap semiconductors. [0004] With the development of UV LE...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L21/02H01L33/06H01L33/22H01L33/32H01L33/56
CPCH01L33/007H01L21/02052H01L33/06H01L33/22H01L33/32H01L33/56H01L2933/005
Inventor 不公告发明人
Owner SUZHOU NANER MATERIAL TECH CO LTD
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