A noble metal single atom doped hf 3 no 4 Thin film and its preparation method
A precious metal, hf3n4 technology, applied in metal material coating process, ion implantation plating, vacuum evaporation plating, etc., can solve the problems of environmental threats, mechanical properties degradation, etc., and achieve the improvement of friction and wear resistance, hardness and toughness Enhanced, reproducible results
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0033] 1) Clean and dry the substrate; specifically: soak the substrate in a diluted hydrofluoric acid solution for 3 to 5 minutes to remove the oxide layer on the substrate surface, hydrofluoric acid in the hydrofluoric acid solution and deionized The volume ratio of water is 1:10-12. Then ultrasonically clean the substrate in acetone solution for 15-25 minutes; then put the substrate in alcohol and ultrasonically clean it for 15-25 minutes; finally, ultrasonically clean the substrate in deionized water for 15-20 minutes, take it out and place it in a drying oven for 40-60 ℃ dry 0.5 ~ 1h.
[0034] 2) Using magnetron sputtering equipment, put the cleaned and dried substrate into the vacuum chamber of the magnetron sputtering device, adjust the deposition angle to 60°, and the distance between the target and the substrate to be 16cm. The temperature is set to 25°C, the bias voltage of the substrate is adjusted to -50V, and the cavity is evacuated to 4×10 -4 Below Pa.
[0035...
Embodiment 2
[0039] Steps 1), 2) are the same as the implementation case 1.
[0040] 3) Introduce the sputtering gas argon and the reaction gas ammonia and nitrogen; set the gas flow rate of argon to 60sccm, and the gas flow ratio of nitrogen and ammonia to 5:60; adjust the working pressure of the vacuum chamber to 0.8Pa; Hf The sputtering current of the target was 0.5A, and the sputtering time was 65 minutes.
[0041] 4) After the sputtering is finished, take out the sample for use.
[0042] 5) After XRD and XPS tests were carried out on the prepared samples, it was confirmed that the Hf prepared in this case x N y The N / Hf atomic ratio y:x of the film is less than 1.33, so in order to obtain the nitrogen-rich phase Hf 3 N 4 It is necessary to further increase the nitrogen content.
Embodiment 3
[0044] Steps 1), 2) are the same as the implementation case 1.
[0045] 3) Introduce the sputtering gas argon and the reaction gases ammonia and nitrogen; set the gas flow rate of argon to 60 sccm, and the gas flow ratio of nitrogen and ammonia to 10:60; adjust the working pressure of the vacuum chamber to 0.8Pa; Hf The sputtering current of the target was 0.5A, and the sputtering time was 70 minutes.
[0046] 4) After the sputtering is finished, take out the sample for use.
[0047] 5) The prepared samples were tested by XRD, TEM, SAED and XPS to confirm that the Hf prepared in this case x N y The N / Hf atomic ratio y:x of the thin film is infinitely close to 1.33, so a Th 3 P 4 Structure of Hf 3 N 4 Thin films, but without noble metal single-atom doping.
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More