A kind of sheet boron-doped porous silicon electrode material and preparation method thereof
An electrode material, boron doping technology, applied in the direction of battery electrodes, silicon, circuits, etc., can solve the problems of low initial efficiency of silicon-carbon coating materials, high cost of nanometerization, poor conductivity of silicon, etc., to reduce the initial irreversible capacity, Improvement of first-time efficiency and improvement of electrical conductivity
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Embodiment 1
[0048] A flaky boron-doped porous silicon electrode material with a particle size of 0.2-5 μm is assembled from silicon nanoparticles with a particle size of 10-20 nm; the specific surface area of the flaky boron-doped porous silicon electrode material is 38m 2 / g, the pore diameter is 20-70nm; the molar percentage of boron in the sheet-like boron-doped porous silicon electrode material is 5%.
[0049] The preparation method of the above-mentioned flaky boron-doped porous silicon electrode material is:
[0050] (1) Soak the boron-doped P-type silicon chips with 1mol / L hydrochloric acid for 6 hours to remove metal impurities and their oxides in the boron-doped P-type silicon chips, and then filter them with suction, wash them with water, and heat them at 70°C. Vacuum-dried to obtain boron-doped silicon powder; wherein, the particle diameter of the boron-doped p-type silicon debris is 0.2-5 μm; the molar percentage of boron in the boron-doped p-type silicon debris ( Mole per...
Embodiment 2
[0059] Prepare undoped porous silicon electrode material with undoped commercial silicon powder as raw material, the preparation method of described porous silicon electrode material is:
[0060] (1) Soak undoped commercial silicon powder with 1mol / L hydrochloric acid for 6 hours, then filter, wash with water, and dry in vacuum at 70°C to obtain silicon powder; wherein, the grain size of the undoped commercial silicon powder The diameter is 0.2-5μm;
[0061] (2) Mix silicon powder and magnesium powder evenly at a molar ratio of 1:2.1 to obtain a mixture, which is heat-treated under an argon atmosphere to generate Mg 2 Si powder; the heat treatment temperature is 550°C, and the heat treatment time is 5h;
[0062] (3) Mg 2 Si powder was subjected to high-temperature oxidation at 600°C for 5 hours to obtain a reaction product. The reaction product was soaked in mineral acid for 6 hours, filtered with suction, washed with water, soaked and cleaned with 20% HF acid solution for 6...
Embodiment 3
[0065] A flaky boron-doped porous silicon electrode material with a particle size of 0.2-5 μm is assembled from silicon nanoparticles with a particle size of 10-20 nm; the specific surface area of the flaky boron-doped porous silicon electrode material is 65m 2 / g, the pore diameter is 20-70nm; the molar percentage of boron in the sheet-like boron-doped porous silicon electrode material is 0.5%.
[0066] The preparation method of the above-mentioned flaky boron-doped porous silicon electrode material is:
[0067] (1) Soak the boron-doped P-type silicon chips with 0.1mol / L hydrochloric acid for 24 hours to remove metal impurities and oxides in the boron-doped P-type silicon chips, then filter, wash with water, and dry for 70 °C vacuum drying treatment to obtain boron-doped silicon powder; wherein, the particle size of the boron-doped P-type silicon debris is 0.2-5 μm; the molar percentage of boron in the boron-doped P-type silicon debris (Mole percent) is 0.5%;
[0068] (2...
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