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Boron-doped diamond/graphite composite electrode as well as manufacturing method thereof and double-battery reactor

A boron-doped diamond, composite electrode technology, applied in the field of new functional thin film materials, can solve the problems of large difference in thermal expansion coefficient, damage to normal use of equipment, easy to contaminate the chamber, etc. The effect of improving the binding force of the membrane base

Pending Publication Date: 2018-08-17
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the thermal expansion coefficients of tungsten carbide and boron-doped diamond and graphite are quite different, and the film is still easy to fall off under the action of residual stress.
Secondly, the tungsten source is easy to pollute the chamber, block the pipeline, and destroy the normal use of the equipment

Method used

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  • Boron-doped diamond/graphite composite electrode as well as manufacturing method thereof and double-battery reactor
  • Boron-doped diamond/graphite composite electrode as well as manufacturing method thereof and double-battery reactor

Examples

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preparation example Construction

[0031] Please refer to figure 2 , a method for preparing a boron-doped diamond / graphite composite electrode provided in an embodiment of the present invention, comprising the following steps:

[0032] Step 1: Take the graphite substrate 1, and after sandblasting the graphite substrate 1, deposit a silicon-carbon compound layer 2 on the surface of the graphite substrate 1 to obtain a graphite substrate 1 with a silicon-carbon compound layer 2 on the surface;

[0033]Step 2: Carry out a diamond planting operation on the graphite substrate 1 with a silicon carbide layer 2 on the surface, and then deposit a boron-doped diamond layer 3 on the surface of the silicon carbide layer 2 to obtain a boron-doped diamond / graphite composite electrode.

[0034] In the preparation method provided by the embodiment of the present invention, firstly, the surface of the electrode is roughened by sandblasting pretreatment, which further enhances the mechanical lock and effect between the graphite...

Embodiment 1

[0047] A preparation method of boron-doped diamond / graphite composite electrode, comprising the following steps:

[0048] Step 1: Take the graphite substrate, place the graphite substrate in a sandblasting machine for wet sandblasting. Among them, the sand particles are silicon carbide, the particle size of the sand particles is 50 μm, the pressure of the spray gun is 2 bar, and the sand is blasted until the surface is rough, and finally cleaned with deionized water and dried with nitrogen.

[0049] The silicon carbide layer is deposited on the surface of the sandblasted graphite substrate by magnetron sputtering. During the deposition process, the graphite substrate is firstly cleaned by glow cleaning and ion etching. Among them, the specific operation of the glow cleaning is as follows: argon gas with a flow rate of 300 sccm is introduced, the negative bias voltage of the graphite substrate is 500 V, the cleaning pressure is 1.0 Pa, and the cleaning time is 30 minutes. The ...

Embodiment 2

[0053] A preparation method of boron-doped diamond / graphite composite electrode, comprising the following steps:

[0054] Step 1: Take the graphite substrate, place the graphite substrate in a sandblasting machine for wet sandblasting. Wherein, the sand particles are aluminum oxide, the particle size of the sand particles is 100 μm, the pressure of the spray gun is 4 bar, and the sand is blasted until the surface is rough, and finally cleaned with deionized water and dried with nitrogen.

[0055] The silicon carbide layer is deposited on the surface of the sandblasted graphite substrate by magnetron sputtering. During the deposition process, the graphite substrate is firstly cleaned by glow cleaning and ion etching. Among them, the specific operation of glow cleaning is: argon gas with a flow rate of 500 sccm is introduced, the negative bias voltage of the graphite substrate is 800 V, the cleaning pressure is 1.7 Pa, and the cleaning time is 10 minutes. The specific operation...

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Abstract

The invention provides a boron-doped diamond / graphite composite electrode. The boron-doped diamond / graphite composite electrode comprises a graphite base body as well as a silicon-carbon compound layer and a boron-doped diamond layer which are sequentially stacked on the graphite base body. A thermal expansion coefficient of the silicon-carbon compound is within an intermediate value range of thethermal expansion coefficient of graphite and boron-doped diamond, and therefore, the silicon-carbon compound is taken as an intermediate transition layer, and difference of thermal expansion coefficients of layers of the boron-doped diamond / graphite composite electrode is reduced. Influences, on film-based binding force, of thermal residual stress are finally reduced, and film-based binding forceof the boron-doped diamond / graphite composite electrode is improved. The invention further provides a manufacturing method for the composite electrode, and the manufacturing method is simple in process, and is low in cost; and the silicon-carbon compound layer is deposited for avoiding pollution on a chamber, so that the industrial applicability is very great.

Description

technical field [0001] The invention belongs to the technical field of novel functional thin film materials, and in particular relates to a boron-doped diamond / graphite composite electrode, a preparation method, and a double-battery reactor. Background technique [0002] The electrochemical advanced oxidation method has attracted widespread attention from scholars due to its advantages of high energy consumption, low cost, and no secondary pollution in the treatment of high-concentration organic wastewater. The key to electrochemical advanced oxidation technology is to find a suitable electrode. The boron-doped diamond / graphite composite electrode has become an ideal choice for industrial electrodes due to its good electrochemical properties, low price, stable chemical properties, and high oxygen evolution overpotential. However, the bonding force between boron-doped diamond and graphite matrix is ​​one of the main factors affecting the service life of composite electrodes....

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C02F1/461C02F1/467
CPCC02F1/46109C02F1/4672C02F2201/002C02F2201/46105C02F2001/46133
Inventor 唐永炳谷继腾杨扬李子豪张文军
Owner SHENZHEN INST OF ADVANCED TECH
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