A Dielectric Integrated Waveguide Filter Based on Gallium Arsenide Technology
A filter and dielectric substrate technology, applied in waveguide-type devices, circuits, electrical components, etc., can solve the problems of increased manufacturing cost, large physical size, electromagnetic energy leakage, etc., to achieve easy processing, compact structure, high frequency selection sexual effect
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[0037] The present invention will be described in detail below with reference to the accompanying drawings and examples.
[0038] Group III-V compound semiconductor materials represented by gallium arsenide (GaAs) have the characteristics of high electron mobility, high temperature resistance, radiation resistance, and easy growth of heterostructures. Semiconductor devices based on this substrate have the characteristics of high operating frequency, stable high and low temperature performance, and low noise, so they have been widely used in the design of W-band active devices. At the same time, because the GaAs process has the characteristics of high precision, if the GaAs process is used to develop the SIW filter, the problem of insufficient precision in the W-band of the traditional circuit integration process can be solved, but there are few work reports in this area at present.
[0039] Therefore, the present invention proposes a GaAs technology-based dielectric integrated...
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