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Radiation-sensitive resin composition, resist pattern formation method, and acid diffusion control agent

A technology of resin composition and radiation, applied in the field of radiation-sensitive resin composition and acid diffusion control agent, can solve the problems of insufficient storage stability, achieve PEB shrinkage inhibition and storage stability, small LWR, and defect little effect

Active Publication Date: 2018-08-28
JSR CORPORATIOON
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the above-mentioned conventional radiation-sensitive resin composition containing an acid diffusion control agent has the disadvantage of insufficient storage stability due to its alkalinity.

Method used

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  • Radiation-sensitive resin composition, resist pattern formation method, and acid diffusion control agent
  • Radiation-sensitive resin composition, resist pattern formation method, and acid diffusion control agent
  • Radiation-sensitive resin composition, resist pattern formation method, and acid diffusion control agent

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0373]

[0374] The radiation-sensitive resin composition can be prepared by combining [A] polymer, [B] acid generator, [C] compound, and optionally containing [D] polymer, [E] solvent, and other optional components. The mixture is mixed at a ratio of, and the obtained mixed liquid is preferably prepared by filtering through a filter with a pore size of about 0.2 μm. The lower limit of the solid content concentration of the radiation-sensitive resin composition is preferably 0.1% by mass, more preferably 0.5 parts by mass, and even more preferably 1% by mass. The upper limit of the solid content concentration is preferably 50% by mass, more preferably 30% by mass, and even more preferably 20% by mass.

[0375] This radiation-sensitive resin composition can be used for positive pattern formation using an alkaline developer, and can also be used for negative pattern formation using a developer containing an organic solvent. Among them, when used for negative pattern formation usin...

Embodiment

[0395] Hereinafter, the present invention will be specifically described based on examples, but the present invention is not limited to these examples. The measurement methods of various physical properties are shown below.

[0396] [Weight average molecular weight (Mw), number average molecular weight (Mn) and degree of dispersion (Mw / Mn)]

[0397] The Mw and Mn of the polymer were measured by gel permeation chromatography (GPC) using GPC columns manufactured by Tosoh Corporation (2 "G2000HXL", 1 "G3000HXL", and 1 "G4000HXL") under the following conditions. In addition, the degree of dispersion (Mw / Mn) was calculated from the measurement results of Mw and Mn.

[0398] Elution solvent: tetrahydrofuran

[0399] Flow rate: 1.0mL / min

[0400] Sample concentration: 1.0% by mass

[0401] Sample injection volume: 100μL

[0402] Column temperature: 40℃

[0403] Detector: differential refractometer

[0404] Standard material: monodisperse polystyrene

[0405] [ 1 H-NMR analysis and 13 C-NMR analys...

Synthetic example 1

[0410] [Synthesis Example 1] (Synthesis of Compound (C-1))

[0411] Combine 9,10-phenanthrenequinone 2.08g (10mmol), 3,4,5-trimethoxyaniline 2.75g (15mmol), 2-trifluoromethanesulfonyloxybenzaldehyde 2.54g (10mmol), ammonium acetate 3.85g (50mmol) and 100mL of acetic acid were put into the reaction vessel, heated to 110°C and stirred for 4 hours. Next, acetic acid was removed under reduced pressure, and 50 mL of ethyl acetate and 50 mL of saturated sodium bicarbonate aqueous solution were added for liquid separation. The organic layer was dried with anhydrous sodium sulfate, filtered, and the solvent was distilled off. Purification was performed by silica gel column chromatography to obtain compound (C-1) (yield 4.43 g, yield 73%).

[0412]

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Abstract

The present invention is a radiation-sensitive resin composition containing a first polymer having first structural units that contain acid-dissociating groups, a radiation-sensitive acid generator, and a first compound in which the structure can change within the molecule and form a salt due to exposure to radiation. The first compound is preferably a compound in which basicity changes due to exposure to radiation. The first compound is preferably a compound in which an acid is generated due to exposure to radiation. The first compound is preferably represented by formula (1). In formula (1),Ar1 is a substituted or unsubstituted 4- to 30-member heteroarene-diyl group in which at least one nitrogen atom is included as a ring-constituting atom.

Description

Technical field [0001] The present invention relates to a radiation-sensitive resin composition, a method for forming a resist pattern, and an acid diffusion control agent. Background technique [0002] The radiation-sensitive resin composition used in the microfabrication by photolithography generates acid in the exposed part by being irradiated with radiation such as electromagnetic waves and charged particle beams, and the exposed part and the unexposed part are generated by a chemical reaction using the acid as a catalyst. The dissolution rate in the developer is different, thereby forming a resist pattern on the substrate. [0003] At present, by using a laser or electron beam with a shorter wavelength, a liquid immersion exposure device, etc., the processing technology of the resist pattern can be miniaturized. The above-mentioned radiation-sensitive resin composition requires not only excellent resolution of the formed resist pattern, but also optical properties such as LWR...

Claims

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Application Information

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IPC IPC(8): G03F7/004C08F220/28G03F7/038G03F7/039G03F7/20
CPCC08F2/48C08F220/22G03F7/0397C07D235/02C07D235/18C08F220/16C08F2800/10G03F7/0045C08F220/1809C08F220/1807C08F220/283C08F220/1806C08F220/1812C08F220/1811C08F220/1818C08F220/281C08F220/1808G03F7/004G03F7/0048G03F7/038G03F7/039G03F7/20G03F7/26C08F220/28C07D233/64G03F7/30G03F7/162G03F7/168G03F7/2006G03F7/2041G03F7/322G03F7/38
Inventor 木下奈津子
Owner JSR CORPORATIOON