Medical implant and method for its preparation
An implant and titanium film technology, applied in the field of color film and its preparation, can solve the problem of not mentioning the color characteristics of the surface oxide film, and achieve the effects of excellent biocompatibility, good protection, and improved recognition.
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[0017] The preparation method of the metal oxide film provided by the invention comprises:
[0018] provide a substrate;
[0019] forming a titanium film on the substrate, wherein the thickness of the titanium film is ≥400nm;
[0020] The substrate with the titanium film is used as the anode, the inert conductive material is used as the cathode, and the acidic solution is used as the electrolyte for anodic oxidation, so that the surface layer of the titanium film is oxidized to form a titanium oxide layer, and the bottom layer of the titanium film is not oxidized to obtain a colored film, wherein the thickness of the titanium oxide layer is 10nm-240nm.
[0021] The material, shape and roughness of the substrate are not limited, and metals, non-metallic materials and semiconductor materials of any shape can be used, such as silicon wafers, stainless steel, stainless iron, cobalt-based alloys, nickel-based alloys, polymers, etc. Materials, composite materials, etc. can be used...
Embodiment 1
[0033] Provide a silicon wafer, first clean the silicon wafer, and then use a DC power source to sputter a pure titanium target with a power density of 2W / cm 2 , the working temperature in the chamber is 100°C, and the vacuum degree of the backside of the vacuum chamber is 5.0×10 -4 pa, then the flow rate is 40sccm argon gas, the working pressure during coating is 1Pa, and the coating time is controlled so that the thickness of the pure titanium film is 400nm, and the crystal grain is ≤100nm.
[0034] The silicon wafer deposited with a pure titanium film is used as the anode, the 316L stainless steel is used as the cathode, the acidic electrolyte is a mixed solution of phosphoric acid with a molar concentration of 0.05mol / L and 0.03mol / L sulfuric acid, and anodized with a DC voltage of 60V for 210 seconds to Until the thickness of the titanium oxide layer no longer increases, the surface layer of the titanium film is oxidized to form a titanium oxide layer with a thickness of ...
Embodiment 2
[0037] Provide a silicon wafer, first clean the silicon wafer, and then use a DC power source to sputter a pure titanium target with a power density of 1.5W / cm 2 , the working temperature in the chamber is 95°C, and the vacuum degree of the backside of the vacuum chamber is 6.0×10 -4 pa, then the flow rate is 40sccm argon gas, the working pressure during coating is 0.8Pa, and the coating time is controlled so that the thickness of the pure titanium film is 500nm, and the crystal grain is ≤100nm.
[0038] The silicon wafer deposited with a pure titanium film is used as the anode, the 316L stainless steel is used as the cathode, the acidic electrolyte is a mixed solution of phosphoric acid with a molar concentration of 0.1mol / L and 0.02mol / L sulfuric acid, and a DC voltage of 55V is applied for anodic oxidation to titanium oxide. Until the thickness of the layer no longer increases, the surface layer of the titanium film is oxidized to form a titanium oxide layer with a thicknes...
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Abstract
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