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Doped gallium oxide crystal and preparation method thereof

A gallium oxide and crystal technology, applied in the field of artificial crystals, can solve the problems of increased difficulty in crystal crystallization and limited improvement in electrical conductivity, and achieve the effect of high conductivity and high carrier concentration

Inactive Publication Date: 2018-09-14
HANGZHOU FUJIA GALLIUM TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] It can be seen from the above formula that the theoretical limit ability of doping with tetravalent elements to provide free electrons is about 1:1. As the doping concentration increases, the crystallization difficulty increases, and the degree of increase in electrical conductivity is limited.

Method used

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  • Doped gallium oxide crystal and preparation method thereof
  • Doped gallium oxide crystal and preparation method thereof
  • Doped gallium oxide crystal and preparation method thereof

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preparation example Construction

[0038] The preparation of the doped gallium oxide crystal of the present invention can be grown by the optical floating zone method. It can be understood that those skilled in the art can properly select other methods for preparation on the basis of the disclosure of the present invention, such as the pulling method, Crucible drop method, guided mode method, etc.

[0039] Please refer to figure 1 , the preparation method of the doped gallium oxide crystal of the present invention, comprising:

[0040] First, step S11 is performed to provide gallium oxide (Ga 2 o 3 ) powder and niobium oxide (Nb 2 o 5 ) powder, the proportion of gallium oxide is less than or equal to 0.8mol%, for example, can be 0.0001 ~ 0.8mol%; preferably, in order to reduce the influence of impurities as much as possible, the purity of niobium oxide powder in the raw materials used is 4N (99.99 m%) or higher, and the purity of the gallium oxide powder is higher than 6N (99.9999m%). In one embodiment, t...

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Abstract

The invention discloses a doped gallium oxide crystal and a preparation method thereof. According to the doped gallium oxide crystal, the gallium oxide crystal is doped to form an N type conductor, the doped element is niobium and the doped concentration range is less than or equal to 0.8 mol%. The gallium oxide crystal with high carrier concentration and high electric conductivity can be obtained; furthermore, the gallium oxide crystal with different resistivity and carrier concentration can be obtained by controlling the doping concentration.

Description

technical field [0001] The invention relates to the technical field of artificial crystals, in particular to a doped gallium oxide crystal and a preparation method thereof. Background technique [0002] β-Ga 2 o 3 (Gallium oxide) is a semiconductor material with a direct bandgap and a wide bandgap, and the bandgap width is about 4.8-4.9eV. It has many advantages such as large band gap, fast saturated electron drift speed, high thermal conductivity, high breakdown field strength, stable chemical properties, etc. It is transparent from deep ultraviolet (DUV) to infrared region (IR), which is different from traditional Compared with transparent conductive materials (TCOs), a new generation of semiconductor optoelectronic devices with shorter wavelengths can be fabricated. [0003] pure β-Ga 2 o 3 The crystal behaves as semi-insulating or weaker N-type conduction, which is currently known to improve β-Ga 2 o 3 The main method of the N-type conductivity of the crystal is t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/16C30B13/00C30B11/00C30B15/00H01L31/032
CPCH01L31/032H01L31/0321C30B11/00C30B13/00C30B15/00C30B29/16Y02P70/50
Inventor 夏长泰赛青林周威齐红基
Owner HANGZHOU FUJIA GALLIUM TECH CO LTD