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Room temperature gallium-based liquid metal-silicon composite cathode and preparation method thereof

A liquid metal, gallium-based technology, applied in battery electrodes, electrical components, electrochemical generators, etc., can solve the problems of loss of electrical contact, degradation of cycle performance, etc., and achieve the effect of good electrical contact

Active Publication Date: 2018-09-14
HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the deficiencies of the prior art, and provide a room temperature gallium-based liquid metal-silicon composite negative electrode and its preparation method to solve the problem that silicon is gradually pulverized in the process of charging and discharging as the battery negative electrode material, causing internal silicon The technical problem of loss of electrical contact between particles and between silicon and current collectors, resulting in a decrease in cycle performance

Method used

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  • Room temperature gallium-based liquid metal-silicon composite cathode and preparation method thereof
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  • Room temperature gallium-based liquid metal-silicon composite cathode and preparation method thereof

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Embodiment 1

[0026] This embodiment provides a method for preparing a Ga-In-Si composite negative electrode, comprising the following steps:

[0027] (1) Heating metal gallium to 40°C and maintaining it until the metal gallium melts to obtain liquid metal gallium;

[0028] (2) Add metal indium block (90wt%Ga-10wt%In) to liquid metal gallium, and stir for one hour under inert gas (argon) atmosphere to obtain liquid GaIn10 eutectic alloy;

[0029] (3) Soaking the liquid GaIn10 eutectic alloy in a sufficient amount of 30% sodium hydroxide solution by mass;

[0030] (4) Take 0.2g of the liquid GaIn10 eutectic alloy processed in step (3), put it into alcohol, add 3-mercapto-N-nonylpropionamide (1ATC9) with a final concentration of 1mmol / L, and carry out ultrasonic dispersion treatment , to obtain uniformly dispersed fine metal droplets;

[0031] (5) After the above liquid was left to stand for 3 hours, take the upper liquid and dry it at 50°C to obtain LM-GaIn10;

[0032] (6) 100 milligrams ...

Embodiment 2

[0036] This embodiment provides a method for preparing a Ga-Sn-Si composite negative electrode, comprising the following steps:

[0037] (1) Heating metal gallium to 40°C and maintaining it until the metal gallium melts to obtain liquid metal gallium;

[0038] (2) After heating the liquid metal gallium to 100°C, add a metal tin block (88wt%Ga-12wt%Sn), and stir for one hour under an inert (argon) atmosphere to obtain a liquid GaSn12 eutectic alloy;

[0039] (3) placing the liquid GaSn12 eutectic alloy in a sufficient amount of sodium hydroxide solution with a mass ratio of 30% for soaking treatment;

[0040] (4) Take 0.2g of the liquid GaSn12 eutectic alloy processed in step (3), put it into alcohol, add 1ATC9 with a final concentration of 1mmol / L, and carry out ultrasonic dispersion treatment to obtain uniformly dispersed fine metal droplets;

[0041] (5) After the above liquid was left to stand for 3 hours, take the upper liquid and dry it at 50°C to obtain LM-GaSn12;

[0...

Embodiment 3

[0046] This embodiment provides a method for preparing a GaInSn-Si composite negative electrode, comprising the following steps:

[0047] (1) Heating metal gallium to 40°C and maintaining it until the metal gallium melts to obtain liquid metal gallium;

[0048] (2) After heating liquid metal gallium to 100°C, add metal indium block and tin block

[0049] (68wt%Ga-22wt%In-10wt%Sn), after stirring in an inert atmosphere, a liquid Ga-In-Sn alloy, namely GaInSn, is obtained;

[0050] (3) Soaking GaInSn in a sufficient amount of sodium hydroxide solution with a mass ratio of 30%;

[0051] (4) Take 0.2g of GaInSn processed in step (3), put it into alcohol, add 1ATC9 with a final concentration of 1mmol / L, and perform ultrasonic dispersion treatment to obtain uniformly dispersed fine metal droplets;

[0052] (5) After the above liquid was left to stand for 3 hours, the upper layer liquid was taken and dried at 50°C to obtain LM-GaInSn;

[0053] (6) With 100 milligrams of LM-GaInSn,...

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Abstract

The invention discloses a room temperature gallium-based liquid metal-silicon composite cathode and a preparation method thereof, and belongs to the technical field of new energy. A Si cathode material with structural general formula being Ga-X wraps the surface of the cathode, wherein X is In, Sn or In-Sn. Compared with the prior art, the room temperature gallium-based liquid metal-silicon composite cathode has the advantages that a gap generated during silicon burst is repaired by mobility and good electrical conductivity of liquid metal, therefore, it can be ensured that silicon particles is in electric contact with a current collector well, and finally, high-performance composite cathode is obtained.

Description

technical field [0001] The invention relates to the field of new energy technologies, in particular to a room temperature gallium-based liquid metal-silicon composite negative electrode and a preparation method thereof. Background technique [0002] With the rapid consumption of non-renewable energy such as oil and natural gas and the deteriorating ecological environment, before the emergence of new clean energy that can support sustainable economic and social development, human beings can only work hard to continuously improve the efficiency of energy use. Therefore, The storage and release of energy will put forward higher and higher requirements. Compared with traditional secondary batteries such as lead-acid batteries and nickel-chromium batteries, lithium-ion batteries have outstanding advantages such as high monomer voltage, large specific energy, long cycle life, and environmental friendliness, so they are rapidly becoming popular in portable electronic consumer produ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01M4/36H01M4/38H01M4/62H01M10/0525
CPCH01M4/366H01M4/386H01M4/626H01M10/0525Y02E60/10
Inventor 杨俊峰张临超张涛谢卓明李春流方前锋王先平杨瑞芳庄瑞斌秦赤球宰广平
Owner HEFEI INSTITUTES OF PHYSICAL SCIENCE - CHINESE ACAD OF SCI
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