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Graphene thin film electrode, preparation method thereof, graphene composite thin film interdigital electrode with conductive line formed on surface and capacitor

A technology of graphene film and film electrode, which is applied in the manufacture of hybrid capacitor electrodes, hybrid capacitor current collectors, and hybrid/electric double layer capacitors. Promotion and application, easy integration, and the effect of improving energy density

Active Publication Date: 2018-09-21
UNIV OF SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the practical application of graphene, one of the most important problems is its own agglomeration problem, and multi-layer graphene cannot compare with single-layer graphene in many properties.
However, the existing graphene-based all-solid-state supercapacitors mostly use reduced graphite oxide or reduced graphene oxide as raw materials, and the graphene itself has a low monolayer content, mainly multi-layer graphene. Electrode materials are prepared by reduction methods such as heat treatment and reducing agent treatment. This process will lead to the irreversible re-stacking of graphene carbon layers, thereby reducing the overall performance of the device.
In addition, most of the existing graphene-based all-solid-state supercapacitors are electrochemical energy storage devices, with a single development direction, large volume, and narrow application range, which do not meet the requirements of multi-directional development in the industry.

Method used

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  • Graphene thin film electrode, preparation method thereof, graphene composite thin film interdigital electrode with conductive line formed on surface and capacitor
  • Graphene thin film electrode, preparation method thereof, graphene composite thin film interdigital electrode with conductive line formed on surface and capacitor
  • Graphene thin film electrode, preparation method thereof, graphene composite thin film interdigital electrode with conductive line formed on surface and capacitor

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preparation example Construction

[0092] The present invention also provides a kind of preparation method of graphene film electrode, comprises the following steps:

[0093] a) Composite a single-layer graphene sheet grown on a metal substrate on a flexible substrate, and remove the metal substrate by an etching solution to obtain an intermediate product;

[0094] b) transferring the single-layer graphene sheet on the intermediate product obtained in the above steps to the electrode substrate to obtain an electrode substrate composited with a graphene film;

[0095] Said transfer includes a single transfer or multiple transfers;

[0096] c) Depositing a metal film on the graphene film of the electrode substrate compounded with the graphene film obtained in the above steps to obtain a graphene film electrode.

[0097] The selection, combination and preferred range of materials in the preparation method of the graphene thin film electrode in the present invention preferably correspond to the selection, combinat...

Embodiment 1

[0128] a) High-quality graphene was grown on copper foil (thickness 20 μm, area the size of a standard A4 paper) by chemical vapor deposition, the growth temperature was 1000 °C, the growth time was 10 min, CH 4 Gas flow rate is 10sccm, hydrogen 10sccm;

[0129] b) The copper foil grown with graphene is tightly attached to the PET substrate (Cu / PET) by rolling, and the Cu / PET film is placed in 0.5M (NH 4 )S 2 o 8 In the etching solution, the etching time is 2 to 4 hours to completely etch Cu;

[0130] c) Lay the resulting flexible PET / graphene substrate to the supercapacitor PET substrate (125 μm), or to the PTFE film substrate, and after keeping it at 90°C for 20 minutes, slowly peel off the PET substrate to realize graphene Transfer to PET substrate / PTFE substrate;

[0131] d) Repeat step c) 3 times to obtain a 3-layer graphene film conductive film electrode, the size of which is the size of a standard A4 paper.

Embodiment 2

[0133] a) High-quality graphene was grown on copper foil (thickness 20 μm, area the size of a standard A4 paper) by chemical vapor deposition, the growth temperature was 1030 °C, and the growth time was 20 min; CH 4 The gas flow rate is 3 sccm, and the hydrogen gas is 10 sccm;

[0134] b) The graphene-grown copper foil is tightly attached to the PET substrate (Cu / PET) by rolling, and the Cu / PET film is placed in 0.5M FeCl 3 In the etching solution, the etching time is 1 to 2 hours to completely etch Cu;

[0135] c) cutting the resulting flexible PET / graphene substrate into a size of 25 cm 2 A small piece; and bonded to the supercapacitor PET substrate (50 μm), after maintaining at 100 ° C for 20 minutes, slowly peel off the PET substrate, so as to realize the transfer of graphene to the PET substrate;

[0136] d) Repeat step c) 6 times to obtain a 6-layer graphene film conductive film electrode with a size of 25cm 2 .

[0137] see figure 2 , figure 2 It is the physical...

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Abstract

The present invention provides a graphene thin film electrode. The graphene thin film electrode comprises an electrode substrate, a graphene thin film composited on the electrode substrate, and a metal thin film composited on the graphene thin film; the graphene thin film is a single-layer graphene sheet or a multi-layer graphene sheet; and single-layer graphene sheets are stacked so as to form the multi-layer graphene sheet. The invention also provides a preparation method of the graphene thin film electrode. According to the graphene thin film electrode and the preparation method thereof ofthe invention, the single-layer graphene sheets are stacked so as to form the multi-layer graphene sheet, so that the multi-layer graphene sheet can be used for preparing the graphene thin film electrode. A flexible graphene conductive electrode can be also prepared; the integrity of a two-dimensional planar structure can be reserved, and the conductivity of graphene can be retained; and the flexible graphene conductive electrode can be directly used for the extremely thin electrode material of a flexible or non-flexible supercapacitor. The interdigital patterning of the electrode is realizedby means of laser carving, so that a light and ultra-thin all-solid supercapacitor can be prepared; the energy density and power density of the device can be improved; and excellent alternating-current filtering performance of the device can be realized.

Description

technical field [0001] The invention belongs to the technical field of graphene composite films, and relates to a graphene film electrode and a preparation method thereof, an interdigital electrode, and a capacitor, in particular to a graphene film electrode and a preparation method thereof, and a graphene composite film with conductive circuits on its surface Interdigitated electrodes, capacitors. Background technique [0002] Graphene is a new material with a single-layer sheet structure composed of carbon atoms. It is a planar film composed of carbon atoms with sp2 hybrid orbitals forming a hexagonal honeycomb lattice, a two-dimensional material with a thickness of only one carbon atom. As a two-dimensional crystal composed of carbon atoms with only one atomic thickness, it is currently the thinnest and strongest material in the application field. At the same time, graphene also has excellent electrical conductivity, which can reduce internal Resistance, improve the cyc...

Claims

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Application Information

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IPC IPC(8): H01G11/26H01G11/28H01G11/36H01G11/68H01G11/70H01G11/86H01G11/10
CPCH01G11/10H01G11/26H01G11/28H01G11/36H01G11/68H01G11/70H01G11/86Y02E60/13
Inventor 朱彦武叶江林
Owner UNIV OF SCI & TECH OF CHINA
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