Flexible full-band photoelectric material and photoelectric device and manufacturing methods thereof
A technology of optoelectronic materials and manufacturing methods, applied in semiconductor/solid-state device manufacturing, electric solid-state devices, photovoltaic power generation, etc., can solve the problems of inability to absorb red light and infrared light, achieve good flexibility, suppress dark current, and high flexibility Effect
Pending Publication Date: 2018-11-02
湖州深芯智能科技有限公司
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[0034] Flexible full-band optoelectronic materials, including ytterbium- and erbium-doped sodium yttrium tetrafluoride core-shell nanoparticles.
[0035] The ratio of sodium yttrium tetrafluoride, ytterbium and erbium is 50%-95% by mass fraction of yttrium, preferably 78%, 5%-50% of ytterbium, preferably 20%, and 0.5%-10% of erbium, preferably 2%.
[0036] A method for manufacturing a flexible full-band optoelectronic material, including:
[0037] dissolving the rare earth oxide into trifluoroacetic acid to prepare a trifluoroacetic acid salt solution, and evaporating the solution to dryness to obtain a rare earth trifluoroacetic acid salt powder;
[0038]Then adding rare earth trifluoroacetate powder and sodium trifluoroacetate powder into the solution of oleylamine, oleic acid and octadecene, stirring evenly under a protective atmosphere to obtain a mixed solution;
[0039] Heating the mixed solution and continuing to stir, the rare earth trifluoroacetate and sodium triflu...
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Abstract
The invention provides a flexible full-band photoelectric material and photoelectric device and manufacturing methods thereof. The flexible full-band photoelectric material comprises yttrium tetrafluoride sodium, ytterbium and erbium in nanoparticles; an organic semiconductor material is utilized as a flexible photoactive layer, rare earth-doped nanoparticles are utilized as a light wavelength conversion material and a detection wavelength of the photoelectric device is expanded to an infrared region through converting infrared light which cannot be absorbed by an organic semiconductor into visible light which can be absorbed by the organic semiconductor, thereby achieving detection of full-band photons through the flexible photoelectric device. The flexible full-band photoelectric devicehas the advantages of being simple in process, low in manufacturing cost, high in light response rate and high in flexibility, and has a broad application prospect in multiple fields, such as light detection, wearable devices and photon storage devices, and full-band photoelectric detection can be achieved.
Description
technical field [0001] The invention relates to the field of photoelectric technology, in particular to a flexible full-band photoelectric material, a photoelectric device and a manufacturing method thereof. Background technique [0002] At present, the key materials of optoelectronic devices are mainly inorganic semiconductor materials, such as silicon, germanium, III-V semiconductors and II-VI semiconductor materials (gallium arsenide, gallium indium arsenide, cadmium telluride, cadmium mercury telluride). The detection wavelength of inorganic semiconductor optoelectronic devices is determined by the bandgap width, for example, the bandgap width of silicon material is 1.12 eV, and the corresponding detection wavelength is less than 1100nm. The advantage of inorganic semiconductor optoelectronic devices is that the bandgap width of the device can be adjusted by adjusting the composition of the semiconductor material to adjust the wavelength range of the detected light (such...
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IPC IPC(8): H01L51/42H01L51/46
CPCH10K30/35H10K2102/00Y02E10/549Y02P70/50
Inventor 童祎赵新宇丛聪
Owner 湖州深芯智能科技有限公司