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Plasma generating device

A plasma and generation device technology, applied in the direction of plasma, coating, gaseous chemical plating, etc., can solve the problems of reduced productivity, easy deposition of polymer films on hollow cathode electrodes, deformation of substrates, etc., and achieve the goal of improving productivity Effect

Inactive Publication Date: 2018-11-09
JCU CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, even in a plasma CVD apparatus using a hollow cathode discharge, polymerization occurs in a type of apparatus (for example, the apparatus of Patent Document 1) in which the substrate to be filmed is sandwiched between the hollow cathode electrode and the anode electrode. The film is easily deposited on the hollow cathode electrode, particles are generated, etc., and the film cannot be formed stably. In addition, there are also problems such as the further expansion of the plasma from the electrode to the outside, which reduces the plasma density, deteriorates the gas distribution, and causes the film thickness to increase. inconsistency
In addition, when the hollow cathode electrode itself is prone to high temperature and the substrate to be filmed is a thermoplastic resin material, the substrate may be deformed, resulting in reduced productivity.
[0007] In addition, even in a plasma film-forming apparatus using a pair of flat-plate parallel electrodes (for example, the apparatus of Patent Document 2), one of the electrodes is formed of a silicon material. When the film-forming part is formed with a relatively thick film thickness, the electrode itself needs to be replaced frequently, and it cannot be assembled in a production line in reality

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0047] [Example 1: Confirmation of the state after modification of the substrate surface]

[0048] The plasma generator according to this embodiment is used to modify the surface of the ABS substrate, and the modified substrate is modified by XPS (X-ray Photoelectron Spectroscopy) and SEM (Scanning Electron Microscope). The surface of the material is evaluated.

[0049]

[0050] An ABS substrate is installed in the device chamber, and after depressurizing the chamber to a predetermined pressure, oxygen is supplied, and a predetermined high-frequency voltage is applied to the counter electrode formed of the plate-shaped conductor portion. The surface of the substrate is modified by irradiating the generated plasma to the surface of the ABS substrate. The plasma treatment conditions are summarized in Table 1. In addition, the distance between T-S (mm) in Table 1 represents the distance between the electrode and the substrate.

[0051] [Table 1]

[0052]

[0053]

[0054] XPS was used...

Embodiment 2

[0057] [Example 2: Confirmation of improved adhesion after modification of the substrate surface]

[0058] The surface of the ABS base material and the PC / ABS base material was modified using the plasma generator according to this embodiment, and after the copper plating film was formed, a peel strength test was performed.

[0059]

[0060] Install an ABS substrate or a PC / ABS substrate in the chamber of the device, after depressurizing the chamber to a predetermined pressure, supply a constant amount of oxygen, and apply a predetermined high-frequency voltage to the counter electrode composed of a plate-shaped conductor. . The surface of the substrate is modified by irradiating the generated plasma to the surface of the ABS substrate or PC / ABS substrate. The plasma treatment conditions are summarized in Table 2. In addition, the distance (mm) between T-S in Table 2 represents the distance between the electrode and the substrate.

[0061] [Table 2]

[0062]

[0063]

[0064] The su...

Embodiment 3

[0069] [Example 3: Confirmation of abrasion resistance]

[0070] Using the plasma generator according to the present embodiment, the surface of a SUS304 substrate colored (optical interference film thickness; about 300 nm) was modified on the surface of the substrate, and after the formation of the SiOx film, an abrasion resistance test was performed.

[0071]

[0072] The above-mentioned substrate is set in the device chamber, and after depressurizing the chamber to a predetermined pressure, a constant amount of hexamethyldisilane (HMDS) and oxygen are supplied, and a predetermined amount of hexamethyldisilane (HMDS) and oxygen are supplied to the counter electrode composed of a plate-shaped conductor. High frequency voltage. The transparent SiOx film was formed by CVD at a film forming rate of 3 nm / sec. The plasma treatment conditions are summarized in Table 3. In addition, the distance between T-S (mm) in Table 3 represents the distance between the electrode and the substrate....

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Abstract

To provide a plasma generating device capable of efficient film formation while avoiding damage to a member to be film-formed due to plasma heat. The plasma generating device according to the presentinvention is characterized in that: a pair of plate-like conductor parts 12, 14 each having a plurality of through-holes 26, 28 passing between main surfaces are opposed to each other with a predetermined gap 13 therebetween; a gas is flowed into the through-holes from one side of the pair of plate-like conductor parts 12, 14; plasma discharge is generated in the gap by applying a high-frequency voltage between the pair of plate-like conductor parts 12 and 14; and the generated plasma is flowed out to the other side of the pair of plate-like conductor parts 12, 14.

Description

Technical field [0001] The present invention relates to a plasma generator for generating plasma to perform predetermined plasma processing. Background technique [0002] In the manufacture of solar panels and automotive lamps, the plasma treatment method is used for cleaning processes, film forming processes, etching processes, etc., due to the advantage of relatively easy process control. As a plasma processing apparatus for performing such a plasma processing method, a plasma chemical vapor deposition (CVD) apparatus is known, which uses intermediate frequency, high frequency, microwave power, etc. to plasma the source gas to form a substrate film. [0003] For example, in order to form a protective film on the surface of a plastic material product, a hard coat film is formed with a thickness of 1 micrometer or more to ensure the hardness and scratch resistance of the protective film. Therefore, it is necessary to increase the film formation rate. As a method for improving the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H05H1/46C23C16/509C23C16/54H01J37/32
CPCC23C16/509C23C16/54H01J37/32H05H1/46H01J37/32091H01J37/32449H01J37/32541C23C16/505H01J37/3244H01J37/32522
Inventor 高桥直贵上山浩幸能势功一
Owner JCU CORP