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A kind of diode electrode production and manufacturing method

A manufacturing method and technology of diodes, which are used in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., to achieve the effect of ensuring sealing, quality and integrity

Active Publication Date: 2020-11-10
深圳市信展通电子股份有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] In the process of etching silicon wafers with diffraction gratings, during photolithography and etching, sealing must be ensured. The first fixed shell needs to be light-proof, and the second fixed shell needs to be vacuumed. Therefore, after photolithography, it cannot Realize the continuous transport of photolithographic silicon wafers into the etching machine using the conveyor belt

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  • A kind of diode electrode production and manufacturing method
  • A kind of diode electrode production and manufacturing method
  • A kind of diode electrode production and manufacturing method

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Embodiment Construction

[0030]In order to make the technical means, creative features, goals and effects achieved by the present invention easy to understand, the present invention will be further described below in conjunction with specific embodiments.

[0031] Such as Figure 1-4 As shown, a kind of diode electrode manufacturing method described in the present invention comprises the following steps:

[0032] Step 1: Use the substrate silicon wafer that has been diffused with boron and phosphorus, and apply BP218 photoresist on the coater;

[0033] Step 2: After the glue coating in Step 1 is completed, dry it at 90°C;

[0034] Step 3: After the silicon wafer is dried in step 2, expose the silicon wafer through a photolithography machine for 16s to 20s;

[0035] Step 4: After the exposure in step 3 is completed, put the silicon wafer into the developing solution for development;

[0036] Step 5: After developing in Step 4, use a vacuum coating machine to vapor-deposit the electrode, and vapor-de...

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Abstract

The invention relates to the technical field of semiconductor production, in particular to a diode electrode production and manufacturing process. The photolithography machine adopted in the process comprises a first fixed housing, a conveying mechanism, a second fixed housing, an etching mechanism, a feeding mechanism, a sealing mechanism, an adjusting mechanism and a photolithography mechanism,wherein a photolithography mechanism is arranged in the first fixed housing. The second fixed shell is provided with an etching mechanism, which can effectively etch the projected silica gel plate toproduce a solid product. A conveying mechanism is provided between the first fixing case and the second fixing case, which can maintain the tightness of the first fixing case and the second fixing case, and at the same time, the projected silica gel plate in the first fixing case is transferred to the second fixing case for etching, thereby realizing continuous production. A feeding mechanism is used in the first fixed housing to feed the material, while the material is fed, the sealing mechanism is used to keep the sealing, and when the sealing mechanism is opened, the external light is ensured not to be input, so as to ensure the sealing property when the material is fed.

Description

technical field [0001] The invention relates to the technical field of semiconductor production, in particular to a method for producing a diode electrode. Background technique [0002] Diode, also known as crystal diode, or diode for short; it is an electronic component that only transmits current in one direction. It is a device with 2 terminals joined by 1 part number, and has the property of causing current to flow or not to flow according to the direction of the applied voltage. A crystal diode is a p-n junction formed by a p-type semiconductor and an n-type semiconductor, and a space charge layer is formed on both sides of the interface, and a self-built electric field is built. When there is no external voltage, the diffusion current caused by the carrier concentration difference on both sides of the p-n junction is equal to the drift current caused by the self-built electric field, and it is in a state of electrical balance. The current directionality of most diode...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/285H01L21/329G03F7/20
CPCG03F7/70025G03F7/70191G03F7/70733G03F7/70808H01L21/2855H01L21/28568H01L29/6609
Inventor 施锦源邢明
Owner 深圳市信展通电子股份有限公司