Quantum nanocrystalline complex and preparation method thereof

A technology of nanocrystals and composites, applied in nanotechnology, nano-optics, nanotechnology, etc., can solve the problems of complex operation, high control difficulty, poor anti-agglomeration effect, etc., and achieve simple process, good coating effect and easy operation Effect

Inactive Publication Date: 2018-11-20
SHENZHEN PLANCK INNOVATION TECH CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to provide a quantum nanocrystal composite and its preparation method, so as to solve the problems o

Method used

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  • Quantum nanocrystalline complex and preparation method thereof
  • Quantum nanocrystalline complex and preparation method thereof
  • Quantum nanocrystalline complex and preparation method thereof

Examples

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Embodiment 1

[0063] This embodiment provides a preparation method for preparing CdZnSe / CdZnS quantum nanocrystalline composite (a schematic diagram of the specific preparation process is as figure 1 Shown), including the following steps:

[0064] (1) Prepare 10 mL of CdZnSe / CdZnS quantum dot n-hexane solution with a concentration of 0.1 mg / mL; the obtained product is as Figure 2A Shown

[0065] (2) Add 0.1g of mesoporous silica powder to the quantum nanocrystal n-hexane solution prepared in (1), stir to make the quantum nanocrystal fully adsorbed in the silica powder, centrifuge and dry to prepare CdZnSe / CdZnS Quantum dot composite powder; the resulting product is such as Figure 2B Shown

[0066] (3) Prepare 2mL of 90% bis(sec-butanol) orthosilicate triethylaluminum orthosilicate toluene solution; under the protection of nitrogen, the prepared bis(sec-butanol)triethyl orthosilicate Add all the base orthosilicate aluminum salt solution to the CdZnSe / CdZnS quantum dot composite powder of step (2...

Embodiment 2

[0069] This embodiment provides a method for preparing a CdSe / ZnS quantum nanocrystalline composite, which includes the following steps:

[0070] (1) Prepare 10 mL of CdSe / ZnS quantum dots n-hexane solution with a concentration of 0.01 mg / mL;

[0071] (2) Add 0.002g of mesoporous zirconium dioxide powder to the quantum nanocrystal n-hexane solution prepared in (1), stir to make the quantum nanocrystal fully adsorbed in the zirconium dioxide powder, centrifuge and dry to prepare CdSe / ZnS Quantum dot composite powder;

[0072] (3) Prepare 2 mL of 3-mercaptopropyltrimethoxysilane toluene solution with a mass fraction of 80%; under the protection of nitrogen, add all the prepared 3-mercaptopropyltrimethoxysilane solution to the CdSe / In the ZnS quantum dot composite powder, the hydrolysis reaction is triggered by the moisture in the solvent (the mass fraction of water accounts for 0.01% of the solvent), and the gel is obtained after 240 hours of reaction, and then the gel is dried at 50...

Embodiment 3

[0075] This embodiment provides a method for preparing a ZnMnSe quantum nanocrystalline composite, including the following steps:

[0076] (1) Prepare 10 mL of toluene solution of ZnMnSe quantum dots with a concentration of 0.7 mg / mL;

[0077] (2) Add 1.26g of porous alumina powder to the toluene solution of quantum nanocrystals prepared in (1), stir to make quantum nanocrystals fully adsorbed in the alumina powder, centrifuge and dry to prepare ZnMnSe quantum dot composite powder;

[0078] (3) Prepare 2 mL of 100% trimethylsilyldiethylamine toluene solution; under the protection of argon, add all the prepared trimethylsilyldiethylamine solution to the ZnMnSe quantum dots of step (2) In the composite powder, the hydrolysis reaction is triggered by the moisture in the solvent (the mass fraction of water accounts for 0.03% of the solvent). The gel is obtained after 48 hours of reaction, and the gel is dried at 150°C for 8 hours to prepare ZnMnSe quantum nanometer Crystal complex.

[00...

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Abstract

The invention provides a quantum nanocrystalline complex and a preparation method thereof. The method comprises the following steps: (1) preparing a quantum nanocrystalline solution; (2) adding a porous material into the quantum nanocrystalline solution in the step (1), and drying to obtain composite powder; (3) adding an oxide precursor solution into the composite powder obtained in the step (2),carrying out a hydrolysis reaction, and drying, thereby obtaining the quantum nanocrystalline complex. The preparation method provided by the invention realizes dual protection of the porous materialsubstrate and the oxide protective layer on the quantum nanocrystalline, and has high stability; moreover, the preparation method provided by the invention is simple in process, and no catalyst is added, that is, an excellent hydrolysis reaction can be carried out. The operation is convenient, and the prepared quantum nanocrystalline complex has excellent application prospects in the fields of illumination, display and the like.

Description

Technical field [0001] The invention belongs to the field of nano materials, and relates to a quantum nano crystal composite and a preparation method thereof. Background technique [0002] Semiconductor quantum nanocrystals are nanocrystalline materials with at least one dimension below 10 nm. Because of the quantum size effect, semiconductor nanocrystals have many unique properties that bulk materials do not have, such as fluorescence. Semiconductor quantum nanocrystals have a narrow fluorescence half-peak width, a long fluorescence lifetime, and excellent photobleaching resistance, which makes them have broad application prospects in quantum dot lasers, displays, microelectronic devices, solar cells and other fields. Therefore, it has attracted extensive research attention in recent years. [0003] Affected by factors such as temperature, water, oxygen, photoelectricity, etc., fluorescent semiconductor nanocrystals such as two-sixth group, four-six group, three-five group, pero...

Claims

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Application Information

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IPC IPC(8): C09K11/88B82Y20/00B82Y30/00
CPCB82Y20/00B82Y30/00C09K11/883
Inventor 孙小卫王恺周劭臣刘皓宸
Owner SHENZHEN PLANCK INNOVATION TECH CO LTD
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