Silicon-based graphene photoelectric detector

Abstract

The invention discloses a silicon-based graphene photoelectric detector. The silicon-based graphene photoelectric detector comprises a silicon waveguide, an oxide substrate layer, an oxide cladding layer and graphene, and further comprises sub-wavelength metal electrodes composed of a first metal electrode and a second metal electrode, which are symmetrically arranged, wherein the sub-wavelength metal electrodes are crossly arrayed above the silicon waveguide by adopting two different types of metal. According to the silicon-based graphene photoelectric detector disclosed by the invention, twodifferent types of the metal are in contact with graphene to generate doping of different concentrations or types, so that electric potential difference is introduced between the sub-wavelength metalelectrodes and is used for driving a photon-generated carrier to flow toward the two electrodes. According to the silicon-based graphene photoelectric detector disclosed by the invention, the contactarea between the electrodes and the graphene is enlarged through a crossed arrangement structure of the electrodes, and the absorption efficiency of the carrier is improved; the graphene is laminatedon upper surfaces of the sub-wavelength metal electrodes and the sub-wavelength metal electrodes are used for carrying out optical field regulation and control on a transverse magnetic (TM) model transmitted in the silicon waveguide to increase an electric field component in a direction parallel to the graphene, so that the interaction effect between an optical field and the graphene is enhancedand the responsiveness of the detector is improved.

Description

technical field [0001] The invention belongs to the field of optics, and more specifically relates to a silicon-based graphene photodetector. Background technique [0002] Compared with traditional optical platforms, silicon-based photonics has many advantages, such as low power consumption, large bandwidth, small size, compatibility with traditional microelectronics production processes (ie CMOS processes), etc., and has been developed to solve the next generation of high-speed optical An important discipline in communication and optical interconnection. As a basic device on a silicon-based platform, photodetectors have received extensive attention and research. Common on-chip detectors include III-V detectors and germanium (Ge) detectors, but III-V detectors are not compatible with traditional CMOS processes, resulting in high manufacturing costs, and Ge detectors due to their electrical properties The disadvantage is that the bandwidth is difficult to exceed 100GHz. In...

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Problems solved by technology

[0004] In view of the defects of the prior art, the purpose of the present invention is to solve the problem of low detector responsivity due to the limited interaction between the light field and graphene in ordinary silicon-based waveguides, the limited bandwidth of the detector due to the large-scale structure, and the problem of ordinary metal-assisted waveguides. The technical problem of the structure introducing high extra light loss

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