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Preparation method of Al doped ZnO ultrathin nanometer sheet sensitive material, and applications of Al doped ZnO ultrathin nanometer sheet sensitive material

A technology of sensitive materials and nanosheets, which is applied in the fields of analyzing materials, material analysis by electromagnetic means, measuring devices, etc., can solve the problems of long response-recovery time, high detection limit, high working temperature, and achieves clean and pollution-free process. The effect of low cost and simple preparation process

Inactive Publication Date: 2018-11-30
TIANJIN UNIVERSITY OF TECHNOLOGY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Existing gas sensors generally have shortcomings such as high operating temperature, long response-recovery time, and high detection limit, while two-dimensional ZnO nanostructures usually have more surface defects and surface energy, which are very suitable as gas-sensing materials. ; Especially when the thickness of the two-dimensional ZnO nanostructure is close to or less than the Debye length, the nanostructure has more excellent gas-sensing properties

Method used

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  • Preparation method of Al doped ZnO ultrathin nanometer sheet sensitive material, and applications of Al doped ZnO ultrathin nanometer sheet sensitive material
  • Preparation method of Al doped ZnO ultrathin nanometer sheet sensitive material, and applications of Al doped ZnO ultrathin nanometer sheet sensitive material

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Embodiment 1

[0016] The preparation process of an Al-doped ZnO ultra-thin nanosheet sensitive material for ethanol gas sensor is as follows:

[0017] The preparation of the Al nano-intermediate layer grown on the ceramic tube: first put the ceramic tube into a beaker, and use ultrapure water, ethanol, acetone, and ultrapure water to perform ultrasonic cleaning for 10 minutes. Then a metal Al target with a purity of 99.99% was used, and the background vacuum was 1×10 -4 Pa, the DC sputtering power is 100W, the argon flow is 15sccm, the sputtering pressure is 1Pa, the target base distance is 8cm, the substrate is not heated, the pre-sputtering is 20min, and the sputtering time is 30s, and the surface growth Al nano-interlayer is obtained. of ceramic tubes.

[0018] Then put the ceramic tube with the Al nano-intermediate layer into the beaker, pour 0.5mol / L zinc acetate methanol solution, ultrasonically clean it for 10min, then put the ceramic tube into the crucible, and place it in a muffle...

Embodiment 2

[0027]The preparation process of an Al-doped ZnO ultra-thin nanosheet sensitive material for ethanol gas sensor is as follows:

[0028] The preparation of the Al nano-intermediate layer grown on the ceramic tube: first, put the ceramic tube into a beaker and use ultrapure water, ethanol, acetone, and ultrapure water to perform ultrasonic cleaning for 5 minutes. Then a metal Al target with a purity of 99.99% was used, and the background vacuum was 1×10 -4 Pa, the DC sputtering power is 150W, the argon flow rate is 30sccm, the sputtering pressure is 0.5Pa, the distance between the target and the base is 6cm, the substrate is not heated, the pre-sputtering is 15min, and the sputtering time is 1min. layers of ceramic tubes.

[0029] Then put the ceramic tube with the Al nano-intermediate layer into the beaker, pour 0.5mol / L zinc acetate methanol solution, ultrasonically clean it for 5min, then put the ceramic tube into the crucible, and set the temperature at 200°C Grow the seed...

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Abstract

The invention discloses a preparation method of an Al doped ZnO ultrathin nanometer sheet sensitive material, and applications of the Al doped ZnO ultrathin nanometer sheet sensitive material. The preparation method comprises following steps: an Al2O3 ceramic tube is subjected to ultrasonic washing with ultrapure water, ethanol, acetone, and ultrapure water successively, direct current magnetron sputtering process is adopted for growth of an Al nanometer middle layer on the surface of the Al2O3 ceramic tube, the Al2O3 ceramic tube with the Al nanometer middle layer is introduced into a zinc acetate methanol solution for ultrasonic treatment, is introduced into a muffle furnace for heating, and then is cooled to room temperature for growth of a ZnO seed layer; a digestion solution and the Al2O3 ceramic tube with the ZnO seed layer are introduced into a high pressure reaction vessel, the high pressure reaction vessel is introduced into a vacuum drying oven for hydro-thermal treatment, and is introduced into a muffle furnace for annealing so as to obtain Al doped ZnO ultrathin nanometer sheets on the ceramic tube surface. The preparation method is simple; the process is clean; no pollution is caused; the cost is relatively low; and the obtained Al doped ZnO ultrathin nanometer sheets can be taken as a sensitive material in preparation of gas-sensitive elements used for ethanol gasdetection.

Description

technical field [0001] The invention belongs to the technical field of gas detection, and in particular relates to a preparation method of an Al-doped ZnO ultra-thin nanosheet sensitive material used for an ethanol gas sensor. Background technique [0002] Gas sensors are widely used in environmental monitoring, biomedicine, military defense and many other fields. Gas-sensitive materials are important factors that determine the performance of gas-sensitive sensors (such as response value, detection limit, response-recovery time, stability, and anti-interference). Metal oxide semiconductors have attracted much attention as new gas-sensitive materials, and their surface gas The adsorption and desorption of ions will cause the transformation of resistance. ZnO is one of the commonly used metal oxide semiconductor gas sensing materials. It has many advantages in the application of gas sensor. It has high sensitivity to many oxidizing or reducing gases, and is rich in content, c...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/407
CPCG01N27/4074
Inventor 李翠平黄绪李明吉李红姬钱莉荣杨保和
Owner TIANJIN UNIVERSITY OF TECHNOLOGY
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