TSC ceramic film, and preparation method and application thereof

Abstract

The invention discloses a TSC ceramic film, and a preparation method and an application thereof, and belongs to the technical field of photoelectric materials. The semiconductor film with a micro-nanothickness is prepared in traditional physical vapor deposition (PVD) coating manner by using a Ti3SiC2 powder material as a target material. The preparation method has the advantages of simplicity, reliability and low cost, and the prepared film keeps the good mechanical performances and friction wearing performance of the Ti3SiC2 material, and also has dual performances of near-infrared lights and moderate conductivity. The Ti3SiC2 ceramic film obtained by the method has a transmittance of 80% or above and a conductivity of 50- 2000 omega / square in a spectral range of 800-2200 nm, so the application range of the Ti3SiC2 material can be broadened to the technical field of photoelectricity based on the above properties, and the Ti3SiC2 material provides a theoretical basis for packaging ofinfrared band photoelectric devices as a window material. The ceramic film of the invention has good engineering application prospects in the field of photoelectricity.

Description

technical field [0001] The invention belongs to the technical field of photoelectric materials, and in particular relates to a preparation method of a TSC ceramic thin film and its product and application. Background technique [0002] In the 1960s, Nowotny and others first proposed the concept of ternary layered carbide / nitride ceramics. Since then, researchers have discovered some compounds with similar structures, but these compounds did not attract enough attention at that time. In 2000, Barsoum published an article on "M n+1 AX n phase" (referred to as MAX phase) materials, and the review also introduces a series of advantages of this type of ceramic materials, which have both ceramic and metal properties. Like ceramics, they have a high melting point, High temperature strength and yield strength, good oxidation resistance, corrosion resistance and thermal shock resistance; like metals, they have high thermal and electrical conductivity, high shear modulus and elastic...

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Problems solved by technology

[0002] In the 1960s, Nowotny and others first proposed the concept of ternary layered carbide / nitride ceramics. Since then, researchers have discovered some compounds with similar structures, but these compounds did not attract enough attention at that time.

The transmittance of ITO film to visible light can reach more than 95%, and the absorbance rate to ultraviolet rays can reach more than 85%, but the transmittance to infrared rays is very low, the highest is only about 20%.

Moreover, the ITO material itself has certain defects. For example, indium (In) is classified as a rare earth metal and is a precious metal; ITO has strong water absorption, and it is easy to absorb moisture and carbon dioxide in the air and cause chemical reactions to deteriorate, commonly known as "Moldy", so special attention should be paid to moisture-proof during storage, and a waterproof layer is usually required in actual use; the ITO layer is prone to ion replacement reactions in active positive ion solutions, forming other reactions with poor conductivity and transmittance Substances, cannot be placed in the active positive ion solution for a long time during processing

[0005] Ti 3 SiC 2 The research direction of ceramics is limited to the preparation method and its tribology research, and there is no research on it in the field of optoelectronics

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