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Preparation method for nanopore structure gold electrode based on magnetron sputtering

A nanoporous structure and magnetron sputtering technology, which is applied in the field of electrode preparation in the field of materials science and engineering, can solve the problems that porous electrodes are greatly affected by precursors and cannot obtain porous nanoelectrodes, and achieve small pore size and prevent falling off , to ensure the effect of performance

Inactive Publication Date: 2018-12-07
NINGBO UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method is relatively simple, but the synthesized porous electrode is greatly affected by the precursor, and the ideal porous nanoelectrode is often not obtained.

Method used

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  • Preparation method for nanopore structure gold electrode based on magnetron sputtering
  • Preparation method for nanopore structure gold electrode based on magnetron sputtering
  • Preparation method for nanopore structure gold electrode based on magnetron sputtering

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Effect test

Embodiment 1

[0018] Embodiment one: a kind of preparation method of the nanoporous structure gold electrode based on magnetron sputtering, comprises the following concrete steps:

[0019] (1) Preparation of gold-silver alloy target material: mix pure gold and pure silver at an atomic ratio of 65:35, melt and pour in an argon atmosphere, and take out the gold-silver alloy ingot after the mold is cooled to obtain a gold-silver alloy target;

[0020] (2) Preparation of gold-silver alloy film: place a silicon wafer with a thickness of 200 μm in a magnetron sputtering device, first use pure chromium as the target material, sputter deposit a layer of chromium film with a thickness of 10 nm, and then use pure gold as the target material, A gold film with a thickness of 10nm is deposited on the chromium film by sputtering, and finally a gold-silver alloy film with a thickness of 100nm is deposited on the gold film by sputtering with the gold-silver alloy as the target;

[0021] (3) Dealloying: cu...

Embodiment 2

[0023] Embodiment two: a kind of preparation method of the gold electrode of nanoporous structure based on magnetron sputtering, comprises the following concrete steps:

[0024] (1) Preparation of gold-silver alloy target material: mix pure gold and pure silver at an atomic ratio of 65:35, melt and pour in an argon atmosphere, and take out the gold-silver alloy ingot after the mold is cooled to obtain a gold-silver alloy target;

[0025] (2) Preparation of gold-silver alloy film: place a silicon wafer with a thickness of 300 μm in a magnetron sputtering device, first use pure chromium as the target material, sputter deposit a layer of chromium film with a thickness of 15 nm, and then use pure gold as the target material, A gold film with a thickness of 15nm is sputter deposited on the chromium film, and finally a gold-silver alloy film with a thickness of 500nm is deposited on the gold film by sputtering with the gold-silver alloy as the target;

[0026] (3) Dealloying: cut t...

Embodiment 3

[0028] Embodiment three: a kind of preparation method of the nanoporous structure gold electrode based on magnetron sputtering, comprises the following concrete steps:

[0029] (1) Preparation of gold-silver alloy target material: mix pure gold and pure silver at an atomic ratio of 65:35, melt and pour in an argon atmosphere, and take out the gold-silver alloy ingot after the mold is cooled to obtain a gold-silver alloy target;

[0030] (2) Preparation of gold-silver alloy film: place a silicon wafer with a thickness of 400 μm in a magnetron sputtering device, first use pure chromium as the target material, sputter-deposit a layer of chromium film with a thickness of 20 nm, and then use pure gold as the target material, A gold film with a thickness of 20nm is deposited on the chromium film by sputtering, and finally a gold-silver alloy film with a thickness of 1000nm is deposited on the gold film by sputtering with the gold-silver alloy as the target;

[0031] (3) Dealloying:...

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Abstract

The invention discloses a preparation method for a nanopore structure gold electrode based on magnetron sputtering. The preparation method is characterized in that firstly, a gold-silver alloy targetmaterial is prepared, next, a gold-silver alloy film is prepared through magnetron sputtering, then, dealloying is carried out on the gold-silver alloy film, and after washing and drying, the gold electrode with a nanopore structure is obtained. The preparation method has the advantages that the process is simple, the elapsed time is relatively short, and no damage is caused to materials; nanopores of the prepared gold electrode are uniform, relatively small in pore diameters and high in porosity, so that the gold electrode achieves enough toughness and is not prone to being damaged; and in addition, when the gold-silver alloy film is prepared, a chrome film and a gold film serve as bonding layers, the gold-silver alloy film can be effectively prevented from disengaging from a silicon wafer, sputtering deposition of the gold-silver alloy film is uniform, and the using performance of the gold electrode is further guaranteed.

Description

technical field [0001] The invention relates to the preparation of electrodes in the field of material science and engineering, in particular to a method for preparing a gold electrode with a nano-pore structure based on magnetron sputtering. Background technique [0002] Due to their size effect and surface effect, metal nanomaterials can exhibit properties that are quite different from those of macroscopic materials, and have broad application potential in many fields such as surface modification, sensing, optics, catalysis, and energy conversion and storage. Therefore, it is an important topic in the field of micro-nano science to explore simple and feasible synthetic methods for preparing metal micro-nano structures in various forms, and the research results are of great use value. [0003] At present, there are a variety of techniques to realize the synthesis and preparation of metal micro-nanostructures, such as vapor phase physical deposition, vapor phase chemical dep...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/34C23C14/16C23C14/58
CPCC23C14/165C23C14/3414C23C14/352C23C14/5846C23C14/5873
Inventor 鲁思渊高清远黄金磊李淑欣
Owner NINGBO UNIV