Electron transport layer, its preparation method and semiconductor optoelectronic device
A technology of electron transport layer and production method, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., can solve the problems of high storage costs, etc., and achieve the effects of reducing storage costs, easy storage, and improving production efficiency
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[0030] An embodiment of the present invention provides a method for preparing an electron transport layer, including the following steps:
[0031] (1) Mix M1X, M2X and organic solvent and heat to 40°C~80°C, and react to obtain a mixed reaction solution;
[0032] (2) Film-forming the mixed reaction solution obtained in step (1) to form a thin film layer; and
[0033] (3) Perform an annealing treatment on the film layer obtained in step (2);
[0034] (4) Put the thin film layer processed in step (3) into an organic solution containing AX, and then undergo cleaning and secondary annealing treatments to form an electron transport layer;
[0035] Wherein, M1 includes any one or a combination of two or more of Pb, Sn and Ge;
[0036] M2 is a high-valent metal element, including Al 3+ , Sb 3+ , In 3+ , Bi 3+ , Gd 3+ , Tb 3+ , Dy 3+ , Sn 4+ , Ce 3+ , Yb 3+ And Er 3+ Any one or a combination of two or more;
[0037] A includes CH 3 NH 3 , HC(NH 2 ) 2 Any one or a combination of two or more of Cs a...
Embodiment 1
[0071] (1) ITO cleaning: Put the ITO conductive glass sheet into a beaker containing acetone, alcohol and deionized water in sequence, and place the beaker in an ultrasonic cleaner for 10 minutes. Place the washed ITO conductive glass in a vacuum drying oven and dry it for later use.
[0072] (2) Spin-coating a layer of perovskite-doped high-valence metal element n-type semiconductor material on the ITO conductive glass to act as an electron transport layer.
[0073] The manufacturing method of the perovskite-doped high-valence metal element n-type semiconductor material film layer is as follows:
[0074] Add PbI to the reagent containing DMF 2 With AlI 3 Powder, formulated into a certain concentration of PbI 2 With AlI 3 The mixed DMF solution, AlI 3 The amount of substance is PbI 2 1% of the amount of the substance, where the prepared solution is placed on a magnetic heating stirrer at a temperature of 40°C, and the stirring time is between 1h. The above mixed solution is simply f...
Embodiment 2
[0082] (1) ITO cleaning: Put the ITO conductive glass sheet into a beaker containing acetone, alcohol and deionized water in sequence, and place the beaker in an ultrasonic cleaner for 10 minutes. Place the washed ITO conductive glass in a vacuum drying oven and dry it for later use.
[0083] (2) Scrape a layer of perovskite-doped high-valence metal element n-type semiconductor material on the ITO conductive glass to act as an electron transport layer.
[0084] The manufacturing method of the perovskite-doped high-valence metal element n-type semiconductor material film layer is as follows:
[0085] Add PbI to the reagent containing DMF 2 With SbI 3 Powder, formulated into a certain concentration of PbI 2 With SbI 3 The mixed DMF solution, SbI 3 The amount of substance is PbI 2 2% of the amount of the substance, where the prepared solution is placed on a magnetic heating stirrer at a temperature of 40° C., and the stirring time is between 1 h. The above mixed solution is simply filt...
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