Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Solar cell and its preparation method and photovoltaic module

A technology of solar cells and conditions, which is applied in the field of solar photovoltaics, and can solve problems such as insufficient improvement effects

Active Publication Date: 2020-09-08
CSG PVTECH +1
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, in mass production, two layers of SiN are plated on the front surface of crystalline silicon solar cells by PECVD method. X film or three or four layers of SiN X The anti-reflection effect is achieved through the passivation effect of the high-refractive-index silicon nitride at the bottom layer and the matching of the refractive index of each layer of silicon nitride. Although it can effectively improve the conversion efficiency of the cell, the improvement effect is still Not obvious enough
And people's requirements for photovoltaic modules are getting higher and higher, not only hope that they have a higher conversion effect, but also hope that they have better anti-PID performance, but the current solar cells can not meet people's needs well

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell and its preparation method and photovoltaic module
  • Solar cell and its preparation method and photovoltaic module
  • Solar cell and its preparation method and photovoltaic module

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0043] Such as figure 2 As shown, the method for preparing a solar cell according to an embodiment is a method for preparing the above-mentioned solar cell, and the method for preparing a solar cell includes the following steps:

[0044] Step S210: preparing a silicon substrate.

[0045] Specifically, the step of preparing a silicon substrate includes: cleaning the silicon wafer, and texturing on one surface of the silicon wafer to form a texturing surface, and then performing diffusion treatment on the texturing silicon wafer to form a PN junction, and then applying a PN junction to the silicon wafer Perform edge etching and remove the phosphorous silicate glass layer, and obtain a silicon substrate after cleaning. That is, the silicon substrate is a silicon wafer formed with a PN junction. Among them, the silicon wafer is monocrystalline silicon, polycrystalline silicon or quasicrystalline silicon. Specifically, the silicon substrate is a P-type silicon wafer.

[0046] Step S22...

Embodiment 1

[0082] The preparation process of the solar cell of this embodiment is as follows:

[0083] (1) Use conventional hydrofluoric acid and nitric acid to add texturing additives to the original P-type polycrystalline silicon wafer that has been cut by diamond wire to form a suede surface by cleaning it once, and then diffuse the texturing silicon wafer to form a PN junction. After the edge is etched and the phosphosilicate glass is removed, it is cleaned to obtain a silicon substrate.

[0084] (2) Use an ozone generator to spray the silicon substrate through a spray plate for ozone oxidation treatment. The ozone concentration is 0.3ppm, the spray distance is 2 mm, and the temperature is 25°C to make the surface of the silicon substrate It can be oxidized to generate a first silicon dioxide layer with a refractive index of 1.44 and a thickness of 1.2 nanometers. Wherein, oxygen with a flow rate of 16 slm is passed through the ozone generator, and nitrogen with a flow rate of 15 slm is ...

Embodiment 2

[0096] The preparation process of the solar cell of this embodiment is as follows:

[0097] (1) Use conventional hydrofluoric acid and nitric acid to add texturing additives to the original P-type polycrystalline silicon wafer that has been cut by diamond wire to form a suede surface by cleaning it once, and then diffuse the texturing silicon wafer to form a PN junction. After the edge is etched and the phosphosilicate glass is removed, it is cleaned to obtain a silicon substrate.

[0098] (2) Use an ozone generator to spray the silicon substrate through a spray plate for ozone oxidation treatment. The ozone concentration is 0.1ppm, the spray distance is 1 mm, and the temperature is 20°C to make the surface of the silicon substrate It can be oxidized to generate a first silicon dioxide layer with a refractive index of 1.44 and a thickness of 0.5 nanometers. Wherein, oxygen at a flow rate of 1 slm is passed through the ozone generator, and nitrogen at a flow rate of 10 slm is passe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a solar cell, a preparation method thereof and a photovoltaic module. A second silicon dioxide layer of the solar cell, a first silicon dioxide layer and an N-layer silicon nitride layer are sequentially laminated on a silicon base layer, and the refractive index of the second silicon dioxide layer is larger than the refractive index of the first silicon dioxide layer. From the first silicon dioxide layer to the first silicon dioxide layer, the refractive index of the N-layer silicon nitride layer decreases in turn, and the thickness of the silicon nitride layer closest to the first silicon dioxide layer is the smallest among the N-layer silicon nitride layers. The conversion efficiency of the solar cell is high and the anti-PID performance is good.

Description

Technical field [0001] The invention relates to the field of solar photovoltaics, in particular to a solar cell, a preparation method thereof, and a photovoltaic module. Background technique [0002] Solar power is a kind of clean and green renewable energy. Under the background of increasingly depleted traditional energy sources and increasing environmental pollution, solar power is more and more popular. However, the most urgent problem facing solar photovoltaic technology is how to reduce costs and increase efficiency more quickly to achieve the goal of competing with conventional energy sources. In the process of preparing crystalline silicon solar cells, coating a passivation film and a reflective film on the surface of the silicon substrate can effectively reduce surface recombination and light reflection, and improve cell conversion efficiency. [0003] At present, in large-scale production, two layers of SiN are plated on the front surface of crystalline silicon solar cell...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0216H01L31/18B82Y20/00B82Y30/00
CPCB82Y20/00B82Y30/00H01L31/02167H01L31/02168H01L31/1868Y02E10/50Y02P70/50
Inventor 赖海文吴娟宋海峰李家兰梁杭伟叶雄新孙小菩
Owner CSG PVTECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com