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Nitrogen-doped tungsten oxide heterojunction solar cell and preparation method thereof

A technology of solar cells and tungsten oxide, applied in the field of solar cells, can solve the problems of high conductivity of tungsten oxide thin film, such as the difficulty of taking into account the bending of the energy band, and achieve the effect of increasing open circuit voltage and filling factor, and high conductivity.

Inactive Publication Date: 2018-12-21
ZHEJIANG NORMAL UNIVERSITY
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  • Claims
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Problems solved by technology

However, it is difficult to balance the high conductivity and large energy band bending of tungsten oxide thin films

Method used

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  • Nitrogen-doped tungsten oxide heterojunction solar cell and preparation method thereof

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Embodiment Construction

[0016] See attached picture. The battery of this embodiment has the following structure:

[0017] Front Ag electrode 1, ITO (80nm) layer 2, N-WO x (10nm) layer 3, first SiO 2 (1.2~1.5nm) layer 4, n-c-Si layer 5, second SiO 2 (1.2-1.5nm) layer 6, LiF (2nm) layer 7, back Ag electrode 8;

[0018] Among them, Ag is metallic silver, ITO is tin-doped indium oxide transparent conductive film, N-WO x Nitrogen-doped tungsten oxide, x=2.5~3.0, SiO 2 is silicon dioxide, n-c-Si is n-type single crystal silicon substrate, and LiF is lithium fluoride. The preparation process of the battery is as follows:

[0019] Step 1: Cleaning of Silicon Wafer

[0020] The substrate is an n-type double-sided polished Czochralski single crystal silicon wafer with a thickness of 200 μm and a resistivity of 2-5 Ω·cm minority carrier lifetime greater than 0.5 ms. First, the surface of the silicon wafer is cleaned by the RCA standard cleaning method to remove surface contamination impurities. RCA is ...

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Abstract

The invention discloses a nitrogen-doped tungsten oxide heterojunction solar cell and a preparation method thereof, which performs surface chemical treatment on a single crystal silicon wafer to remove surface contamination impurities; An ultra-thin SiO2 layer was grown on the front and rear surfaces of silicon wafers by nitric acid oxidation. Nitrogen-doped tungsten oxide thin films are preparedby reactive magnetron sputtering on the SiO2 thin films on the front surface of silicon wafer, and then ITO conductive thin films are sputtered. LiF is grown on the SiO2 film on the back of silicon wafer by thermal evaporation. Front and back Ag electrodes are grown. The nitrogen-doped tungsten oxide thin film is grown by the reactive magnetron sputtering method and is used as the hole transport layer of the crystalline silicon heterojunction solar cell so as tosimultaneously obtain high conductivity tungsten oxide and large tungsten oxide / monocrystalline silicon energy band curvature.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and relates to a nitrogen-doped tungsten oxide heterojunction solar cell and a preparation method thereof. Background technique [0002] Crystalline silicon solar cells occupy more than 95% of the global photovoltaic market share and are currently the mainstream technology of solar cells. The photoelectric conversion efficiency of amorphous silicon / monocrystalline silicon heterojunction (HIT) solar cells has reached 26.6%, so it is considered to be the development direction of high-efficiency solar cells in the future. However, there are parasitic absorption losses in HIT cells and the doping efficiency of amorphous silicon films is relatively low. In the preparation process of HIT cells, special gases such as highly toxic phosphine and borane need to be used, and the low temperature preparation of amorphous silicon films The process is not compatible with the high-temperature preparation pr...

Claims

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Application Information

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IPC IPC(8): H01L31/074H01L31/0336H01L31/18
CPCH01L31/0336H01L31/074H01L31/18Y02E10/50Y02P70/50
Inventor 黄仕华张美影池丹陆肖励
Owner ZHEJIANG NORMAL UNIVERSITY
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