An organic photodetector for a wide spectrum and a preparation method thereof

A photodetector and wide-spectrum technology, which is applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., can solve problems such as complex processes, achieve simple processes, expand the spectral response range, and improve the effect of photogenerated current

Inactive Publication Date: 2018-12-21
XIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Another object of the present invention is to provide the method for preparing the above-mentioned organic photodetector for wide spectrum, which solves the problem of complicated process in the existing preparation method

Method used

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  • An organic photodetector for a wide spectrum and a preparation method thereof
  • An organic photodetector for a wide spectrum and a preparation method thereof
  • An organic photodetector for a wide spectrum and a preparation method thereof

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preparation example Construction

[0049] A kind of preparation method of the organic photodetector that is used for broad spectrum of the present invention, specifically comprises the following steps:

[0050] Step 1, first coat the ITO electrode layer 2 on the glass substrate 1, then use a wet method to clean the glass substrate 1 coated with the ITO electrode layer, and then dry it with pure nitrogen or infrared;

[0051] The process of wet cleaning is as follows: firstly use deionized water to ultrasonically clean the glass substrate 1 for 15 minutes to 20 minutes, then use acetone to ultrasonically clean the glass substrate 2 for 15 minutes to 20 minutes, and finally use absolute ethanol to ultrasonically clean it for 15 minutes to 20 minutes.

[0052] Step 2: After cleaning the glass substrate 1 treated in step 1 with ultraviolet ozone light, it is placed in a nitrogen glove box, and the PEDOT:PSS mixture is spin-coated on the surface of the ITO electrode layer 2 by a glue homogenizer, and spin-coated The...

Embodiment 1

[0059] Step 1, first coat the ITO electrode layer 2 on the glass substrate 1, then use a wet method to clean the glass substrate 1 coated with the ITO electrode layer, and then dry it with pure nitrogen or infrared;

[0060] The process of wet cleaning is as follows: first, the glass substrate 1 is ultrasonically cleaned with deionized water for 15 minutes, then the glass substrate 2 is ultrasonically cleaned with acetone for 15 minutes, and finally, the glass substrate 2 is ultrasonically cleaned with absolute ethanol for 15 minutes.

[0061] Step 2: After cleaning the glass substrate 1 treated in step 1 with ultraviolet ozone light, it is placed in a nitrogen glove box, and the PEDOT:PSS mixture is spin-coated on the surface of the ITO electrode layer 2 by a glue homogenizer, and spin-coated The speed is 3000rpm, and the spin-coating time is 60s; after the spin-coating is completed, place the glass substrate 1 on a sample heating table at 120°C for annealing for 15min to form...

Embodiment 2

[0067] Step 1: first coat the ITO electrode layer 2 on the glass substrate 1, then use the wet method to clean the glass substrate 1 coated with the ITO electrode layer, and then dry it with pure nitrogen or infrared;

[0068] The process of wet cleaning is as follows: first, the glass substrate 1 is ultrasonically cleaned with deionized water for 15 minutes, then the glass substrate 2 is ultrasonically cleaned with acetone for 15 minutes, and finally, the glass substrate 2 is ultrasonically cleaned with absolute ethanol for 15 minutes.

[0069] Step 2: After cleaning the glass substrate 1 treated in step 1 with ultraviolet ozone light, it is placed in a nitrogen glove box, and the PEDOT:PSS mixture is spin-coated on the surface of the ITO electrode layer 2 by a glue homogenizer, and spin-coated The speed is 3200rpm, and the spin-coating time is 60s; after the spin-coating is completed, the glass substrate 1 is annealed for 15min on a sample heating table at 120°C to form an an...

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Abstract

The invention discloses an organic photodetector for a wide spectrum, comprising a glass substrate, an ITO (indium tin oxide) electrode layer is plated on the glass substrate, and an anode buffer layer, an active layer, a cathode buffer layer and an Al electrode layer are sequentially coated on the surface of the ITO electrode layer from bottom to top. The anode buffer layer and cathode buffer layer can enhance the collection of holes or electrons so as to increase the photocurrent, block electrons or holes to reduce the dark current, improve the specific detection rate of the detector, and avoid the high leakage current caused by SWCNT in the active layer.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection devices, and relates to an organic photodetector for wide spectrum, and also relates to a preparation method of the organic photodetector for wide spectrum. Background technique [0002] Photodetectors are devices that convert optical signals into electrical signals, and are widely used in various fields of military and national economy. At present, commercial optoelectronic devices mainly use inorganic materials, but their high production cost and complicated processing technology are not conducive to large-scale production. In contrast, organic semiconductor materials have the advantages of excellent processability, low cost, and large-area fabrication, but have low electron mobility and poor stability. Although pure organic or inorganic semiconductor materials have their own advantages, they all have their own shortcomings, which limit their application range. Organic / inorgani...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/111H10K85/1135H10K85/221H10K30/352Y02E10/549Y02P70/50
Inventor 安涛龚伟刘欣颖
Owner XIAN UNIV OF TECH
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