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A kind of efficient silicon carbide wafer processing method

A silicon carbide and wafer technology, used in metal processing equipment, manufacturing tools, grinding tools, etc., can solve the problems of long processing cycle, complex process procedures, and reduce the quality of epitaxial device manufacturing products, so as to shorten the processing time and improve the quality. Effect

Active Publication Date: 2021-11-12
BEIJING TIANKE HEDA SEMICON CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The Mohs hardness of silicon carbide is 9.5, which is close to that of diamond, so the processing of silicon carbide materials is very difficult
In view of the high hardness and brittleness of silicon carbide materials, the processing efficiency of silicon carbide is generally low at present, and the processing cycle is long, which affects the large-scale production of silicon carbide materials
At present, the products sold on the market are double-sided polished products. The traditional silicon carbide processing technology is single-sided processing, including wafer chamfering, double-sided mechanical grinding, wax patch, rough mechanical polishing, fine mechanical polishing, wafer flipping, Rough mechanical polishing, fine mechanical polishing, chemical mechanical polishing, single-sided processing, thick re-waxing and patch flipping process are complicated, and the processing cycle is long, which is not conducive to the commercial mass production of silicon carbide wafers; simultaneous processing Wafer warp (Warp) and total thickness variation (TTV) are large, which reduces the product quality of downstream epitaxy and device manufacturing

Method used

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  • A kind of efficient silicon carbide wafer processing method
  • A kind of efficient silicon carbide wafer processing method
  • A kind of efficient silicon carbide wafer processing method

Examples

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Effect test

Embodiment 1

[0026] A kind of efficient processing method of silicon carbide wafer, its specific steps are as follows:

[0027] (1) Wafer chamfering;

[0028] (2) The chamfered wafer is ground on both sides, using a water-based diamond polishing fluid, the diamond particle size is 5 μm, the grinding pressure is 115 g / cm2, the grinding disc is a cast iron disc, and the surface of the cast iron disc is grooved. The interval is 10mm, the groove width is 1mm, the groove depth is 10mm, and the grinding time is 3.5h;

[0029] (3) Use automatic grinding wheel polishing equipment to grind and polish both sides of the wafer. First use a 5μm diamond grinding wheel with a rotation speed of 1500rpm, a grinding speed of 3μm / min, and a polishing time of 3 minutes; then use a 2μm diamond grinding wheel with a rotation speed of 2500rpm. The grinding speed is 1.5 μm / min, and the polishing time is 6 minutes; then a 1 μm diamond grinding wheel is used, the rotation speed is 3000 rpm, the grinding speed is 0...

Embodiment 2

[0035] A kind of efficient processing method of silicon carbide wafer, its specific steps are as follows:

[0036] (1) Wafer chamfering;

[0037] (2) The chamfered wafer is double-sidedly ground, using a water-based diamond polishing fluid, the diamond particle size is 3 μm, the grinding pressure is 160 g / cm2, the grinding disc is a cast iron disc, and the surface of the cast iron disc is grooved. The interval is 10mm, the groove width is 1mm, the groove depth is 10mm, and the grinding time is 3h;

[0038] (3) Use automatic grinding wheel polishing equipment to polish both sides of the wafer. First use a 10 μm diamond grinding wheel at a speed of 1000 rpm, a grinding speed of 5 μm / min, and a polishing time of 2 minutes; then use a 3 μm diamond grinding wheel at a speed of 2000 rpm. The grinding speed is 2 μm / min, and the polishing time is 8 minutes; then a 1 μm diamond grinding wheel is used, the rotation speed is 3000 rpm, the grinding speed is 0.3 μm / min, and the polishing ...

Embodiment 3

[0044] A kind of efficient processing method of silicon carbide wafer, its specific steps are as follows:

[0045] (1) Wafer chamfering;

[0046](2) The chamfered wafer is double-sidedly ground, using a water-based diamond polishing fluid, the diamond particle size is 5 μm, the grinding pressure is 160 g / cm2, the grinding disc is a cast iron disc, and the surface of the cast iron disc is grooved. The interval is 20mm, the groove width is 1mm, the groove depth is 10mm, and the grinding time is 3h;

[0047] (3) Use automatic grinding wheel polishing equipment to grind and polish both sides of the wafer. First use a 10μm diamond grinding wheel with a rotation speed of 800rpm, a grinding speed of 5μm / min, and a polishing time of 2 minutes; then use a 5μm diamond grinding wheel with a rotation speed of 1600rpm. The grinding speed is 2 μm / min, and the polishing time is 8 minutes; then a 2 μm diamond grinding wheel is used, the rotation speed is 3000 rpm, the grinding speed is 0.8 μ...

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Abstract

The invention belongs to the technical field of semiconductor material processing, and in particular relates to an efficient silicon carbide wafer processing method, including wafer chamfering, double-sided mechanical grinding, grinding wheel polishing, and double-sided chemical mechanical polishing. The invention adopts diamond grinding wheel polishing to connect double-sided mechanical grinding and double-sided chemical mechanical polishing, abandons the wax patch program in the traditional single-sided processing method, greatly optimizes the processing process, and improves the automation and efficiency of wafer processing. Precision, obtained silicon carbide wafers with low warpage and high surface quality. The inventive method greatly simplifies the wafer processing flow, improves processing efficiency, and is beneficial to commercial large-scale production.

Description

technical field [0001] The invention belongs to the technical field of semiconductor material processing, and relates to an efficient silicon carbide wafer processing method, which improves the processing quality and processing efficiency of the silicon carbide wafer, is beneficial to saving production and processing costs, and is suitable for industrialization promotion. Background technique [0002] With the rapid development of information technology today, the innovation of semiconductor technology plays an increasingly important role. Wide bandgap semiconductors represented by silicon carbide and gallium nitride are the third generation of wide bandgap semiconductors after silicon and gallium arsenide. Compared with traditional semiconductor materials represented by silicon and gallium arsenide, silicon carbide has great advantages in terms of operating temperature, breakdown voltage and radiation resistance. Silicon carbide has become the most mature wide-bandgap semi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B1/00B24B7/22B24B37/005B24B37/04B24B37/08B24B37/16B24B27/00
CPCB24B1/00B24B7/228B24B27/0076B24B37/0056B24B37/044B24B37/08B24B37/16
Inventor 蔡振立刘春俊彭同华
Owner BEIJING TIANKE HEDA SEMICON CO LTD
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