Phosphoric acid based etching liquid and method for preparing same

A technology of phosphoric acid-based etching and etching solution, which is applied in the field of electronic chemicals to achieve the effects of shortening time, reducing etching rate and improving uniformity

Inactive Publication Date: 2019-01-04
湖北兴福电子材料股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

But in 3D NAND process Si 3 N 4 layer with SiO 2 The layers are alternate stacked structure, phosphoric acid etches from the side, Si 3 N 4 layer with SiO 2 layer is in contact with phosphoric acid at the same time, ordinary phosphoric acid is etching Si 3 N 4 layer while also acting on the SiO 2 layer etched

Method used

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  • Phosphoric acid based etching liquid and method for preparing same
  • Phosphoric acid based etching liquid and method for preparing same
  • Phosphoric acid based etching liquid and method for preparing same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0024] A kind of phosphoric acid-based etchant with high etching selectivity is obtained by configuring as follows:

[0025] (1) According to the mass percentage of each raw material: phosphoric acid 85%, siloxane 0.02%, ammonium fluoride 0.01%, heterocyclic fluorine stabilizer 0.01%, cationic surfactant 0.5%, select each reagent, and the remaining part is super pure water.

[0026] (2) Mix ammonium fluoride, heterocyclic fluorine stabilizer and a certain amount of ultrapure water evenly, and set aside;

[0027] (3) Add siloxane, remaining ultrapure water and cationic surfactant to electronic-grade phosphoric acid, mix evenly, and disperse by ultrasonic;

[0028] (4) Add the mixed solution in step (2) to the mixed solution in step (3), stir and sonicate, and then stand still for more than 24 hours.

Embodiment 2

[0034] A kind of phosphoric acid-based etchant with high etching selectivity is obtained by configuring as follows:

[0035] (1) According to the mass percentage of each raw material: phosphoric acid 82%, siloxane 0.03%, ammonium fluoride 0.02%, heterocyclic fluorine stabilizer 0.02%, cationic surfactant 1%, select each reagent, and the remaining part is super pure water.

[0036] (2) Mix ammonium fluoride, heterocyclic fluorine stabilizer and a certain amount of ultrapure water evenly, and set aside;

[0037] (3) Add siloxane, remaining ultrapure water and cationic surfactant to electronic-grade phosphoric acid, mix evenly, and disperse by ultrasonic;

[0038] (4) Add the mixed solution in step (2) to the mixed solution in step (3), stir and sonicate, and then stand still for more than 24 hours.

Embodiment 3

[0040] A kind of phosphoric acid-based etchant with high etching selectivity is obtained by configuring as follows:

[0041] (1) According to the mass percentage of each raw material: phosphoric acid 82%, silanol 0.01%, fluosilicic acid 0.02%, ammonium salt fluorine stabilizer 0.02%, nonionic surfactant 1%, select each reagent, and the remaining part is super pure water.

[0042] (2) Mix fluosilicic acid, ammonium salt fluorine stabilizer and a certain amount of ultrapure water evenly, and set aside;

[0043] (3) Add silanol, remaining ultrapure water and nonionic surfactant to electronic-grade phosphoric acid, mix evenly, and disperse by ultrasonic;

[0044] (4) Add the mixed solution in step (2) to the mixed solution in step (3), stir and sonicate, and then stand still for more than 24 hours.

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Abstract

The invention relate to phosphoric acid based etching liquid with high etching selectivity and a method for preparing the phosphoric acid based etching liquid. The phosphoric acid based etching liquidwith the high etching selectivity mainly comprises, by weight, 50-90% of phosphoric acid, 0.005-1% of silicon-containing compounds, 0.005-1% of fluorine-containing compounds, 0.005-1% of fluorine stabilizers, 0.005-5% of surfactants and the balance water. The phosphoric acid based etching liquid and the method have the advantages that components and the types of novel additives and novel stabilizers are used, accordingly, SiO2 layer etching of the phosphoric acid based etching liquid can be obviously reduced, the Si3N4 layer etching speeds of the phosphoric acid based etching liquid can be obviously increased, and the Si3N4/SiO2 etching selectivity can be obviously improved.

Description

technical field [0001] The invention belongs to the field of electronic chemicals, in particular to a phosphoric acid-based etchant with high etching selectivity and a preparation method thereof. Background technique [0002] With the development of technology, the way we generate data has undergone a great transformation. Before 2000, the Internet was the main source of data, but after 2017, the Internet of Things, smart cars, games, and VR will generate a large amount of data. According to the forecast of "Data Age 2025", the global data The volume will reach 163ZB, which is 10 times the current amount. Data needs to be stored in memory, and planar NAND flash memory is approaching its actual expansion limit, which poses severe challenges to the semiconductor memory industry. [0003] The new 3D NAND technology stacks multiple layers of data storage cells vertically with excellent precision. This technology can support higher storage capacity in a smaller space. Compared...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09K13/08
CPCC09K13/08
Inventor 李少平冯凯贺兆波张庭尹印王书萍姜飞张永萍
Owner 湖北兴福电子材料股份有限公司
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