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Hg2GeSe4 nonlinear optical crystal preparation method and application

A nonlinear optics and crystal technology, applied in the field of nonlinear optical crystal preparation, can solve the problems of slow development of nonlinear crystals, difficult crystal growth, low light damage threshold, etc., and achieves easy processing and storage, low cost, and growth rate quick effect

Inactive Publication Date: 2019-01-04
TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The development of nonlinear crystals in the infrared band is relatively slow; the materials in the infrared region are mostly ABC 2 Type chalcopyrite structure semiconductor materials, such as AgGaQ 2 (Q=S, Se, Te), the optical damage threshold of infrared nonlinear crystal is too low and the crystal growth is difficult, which directly affects the actual use

Method used

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  • Hg2GeSe4 nonlinear optical crystal preparation method and application
  • Hg2GeSe4 nonlinear optical crystal preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Example 1: Preparation of Hg by High Temperature Melt Spontaneous Crystallization 2 GeSe 4 Crystal:

[0034] Weigh 5.591 g of HgSe and 2.306 g of GeSe 2 (i.e. HgSe: GeSe 2 =0.02mol:0.01mol), after mixing evenly, put it into a Φ12mm×200mm quartz glass tube, and evacuate to 10 -3 After that, it was packaged with an oxygen-hydrogen flame and placed in a tube-type growth furnace, slowly raised to 750°C, kept at a constant temperature for 72 hours, slowly cooled to room temperature at a rate of 3°C / h, and the tube-type growth furnace was closed; after the quartz tube cooled Cut to get φ20x60mm black Hg 2 GeSe 4 crystals.

Embodiment 2

[0035] Embodiment 2: adopt crucible drop method to prepare Hg 2 GeSe 4 Crystal:

[0036] Weigh 11.182 grams of HgSe and 4.612 grams of GeSe 2 (ie Hg:Ge:Se=0.04mol:0.02mol:0.08mol), after mixing evenly, put it into a quartz glass tube of Φ25mm×200mm, and vacuumize it to 10 -3 After that, it is packaged with an oxyhydrogen flame and placed in a crystal growth furnace, and slowly raised to 750°C to melt the raw material. After the raw material is completely melted, the growth device drops vertically at a speed of 0.1-10mm / hour; after the crystal growth is completed, the growth It takes 75 hours for the device to cool down to room temperature to obtain φ30x90mm black Hg 2 GeSe 4 crystals.

[0037] After testing, the Hg prepared by the above-mentioned examples 1-2 2 GeSe 4 Nonlinear optical crystals belong to the tetragonal crystal system with space group I 4 - , whose unit cell parameters are: α=β=γ=90°, Z=2, With frequency doubling effect, the light transmission ra...

Embodiment 3

[0039] The Hg obtained in embodiment 1-2 2 GeSe 4 The crystal is not easy to break, not easy to deliquescence, easy to cut, polish and store. With the Hg of embodiment 1-2 gained 2 GeSe 4 crystal, placed in the attached figure 1 At the position marked 3 of the device shown, at room temperature, a Q-switched Ho:Tm:Cr:YAG laser is used as the light source, the incident wavelength is 2090nm infrared light, and the output wavelength is frequency-doubled light of 1045nm. The laser intensity is the same AgGaSe 2 2.1 times.

[0040] attached figure 1 Is the use of the present invention Hg 2 GeSe 4 The working principle diagram of a typical nonlinear optical device made of nonlinear optical crystal, in which 1 is the laser, 2 is the incident laser beam, and 3 is AgZnPS after crystal post-processing and optical processing 4 Nonlinear optical crystal, 4 is the outgoing laser beam generated, 5 is a filter; the incident laser beam 2 is emitted by the laser 1 and injected into Hg ...

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Abstract

The invention discloses a Hg2GeSe4 nonlinear optical crystal preparation method and application. A Hg2G3Se4 nonlinear optical crystal does not have a symmetric center, and belongs to a tetragonal system, the space group is I4<->, and cell parameters are alpha=beta=gamma=90 degrees, and Z=2. The invention further discloses a nonlinear optical crystal prepared through a high temperature melt spontaneous crystallization method and a Bridgman method. The prepared Hg2G3Se4 nonlinear optical crystal can be used for making a nonlinear optical device.

Description

technical field [0001] The invention belongs to the field of preparation of nonlinear optical crystals, in particular, the invention relates to a kind of Hg 2 GeSe 4 The nonlinear optical crystal (Hg 2 GeSe 4 single crystal) and the Hg 2 GeSe 4 Preparation method and application of single crystal and containing the Hg 2 GeSe 4 Single crystal nonlinear optical devices. Background technique [0002] Crystals with nonlinear optical effects are called nonlinear optical crystals. Here nonlinear optical effects refer to effects such as frequency doubling, sum frequency, difference frequency, and parametric amplification. Nonlinear optical effects are only possible in crystals that do not have a center of symmetry. Using the nonlinear optical effect of crystals, nonlinear optical devices such as second harmonic generators, up and down frequency converters, and optical parametric oscillators can be made. The laser generated by the laser can be frequency converted by nonlin...

Claims

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Application Information

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IPC IPC(8): C30B29/46C30B11/00G02F1/355
CPCC30B11/00C30B29/46G02F1/3551
Inventor 姚吉勇林哲帅郭扬武李壮
Owner TECHNICAL INST OF PHYSICS & CHEMISTRY - CHINESE ACAD OF SCI
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