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A TFT array substrate and a manufacturing method thereof

A technology for array substrates and manufacturing methods, which is applied in the field of TFT array substrates and their manufacture, can solve problems such as damage chemistry and doping of semiconductor materials, and achieve the effects of high mobility, high reliability, and a small number of film defects

Inactive Publication Date: 2019-01-04
SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, these new semiconductor materials all have a common feature. When preparing transistors, they can only be patterned by dry etching, while acid wet etching and chemical vapor deposition (Chemical Vapor Deposition, CVD) processes are easy for this type of semiconductor materials. damage and chemical doping

Method used

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  • A TFT array substrate and a manufacturing method thereof
  • A TFT array substrate and a manufacturing method thereof
  • A TFT array substrate and a manufacturing method thereof

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Embodiment Construction

[0053] In order to further illustrate the technical means adopted by the present invention and its effects, the following describes in detail in conjunction with preferred embodiments of the present invention and accompanying drawings.

[0054] see figure 1 , the present invention provides a method for manufacturing a TFT array substrate, comprising the following steps:

[0055] Step S1, such as figure 2 As shown, a base substrate 10 is provided, the base substrate 10 is cleaned, a whole surface of the first metal film is deposited on the base substrate 10 by physical vapor deposition (PVD), and the first metal film is processed by a patterning process. A metal film to obtain the gate 20 ; after cleaning the base substrate 10 , a gate insulating layer 30 covering the gate 20 is formed on the base substrate 10 by chemical vapor deposition.

[0056] Specifically, the base substrate 10 provided in step S1 is a polyimide (PI) substrate polyethylene terephthalate (PET) substrate...

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Abstract

The invention provides a TFT array substrate and a manufacturing method thereof. According to the manufacturing method of the TFT array substrate, the active layer is arranged to be a two-layer structure, wherein the first active layer uses carbon nanotubes, graphene, silicon carbide, a novel semiconductor material of molybdenum disulfide or organic semiconductor material, the second active layeris arranged on the first active layer, the first active layer of the novel semiconductor material can be used as an etching barrier layer to protect the first active layer from damage caused by wet etching and CVD process, and the active layer of the TFT device can also have excellent comprehensive properties of the two semiconductor materials.

Description

technical field [0001] The invention relates to the field of display technology, in particular to a TFT array substrate and a manufacturing method thereof. Background technique [0002] Liquid Crystal Display (LCD) has many advantages such as thin body, power saving, and no radiation, and has been widely used, such as: mobile phones, personal digital assistants (PDAs), digital cameras, computer screens or notebook computers screen etc. [0003] Organic light-emitting diode (Organic Light-Emitting Diode, OLED) display, also known as organic electroluminescent display, is a new type of flat panel display device, due to its simple preparation process, low cost, low power consumption, high luminance, Wide range of working temperature, light and thin size, fast response speed, easy to realize color display and large-screen display, easy to realize matching with integrated circuit driver, easy to realize flexible display, etc., so it has broad application prospects. [0004] Acc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/12H01L27/28H01L21/77
CPCH01L27/1225H01L27/127H10K19/10H01L29/7869H01L29/66969H01L29/78696H10K85/221H10K10/486
Inventor 谢华飞陈书志
Owner SHENZHEN CHINA STAR OPTOELECTRONICS SEMICON DISPLAY TECH CO LTD
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