A ternary p-type CuBi2O4 thin film transistor and a preparation method thereof

A thin-film transistor, cubi2o4 technology, applied in transistors, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of harsh preparation process conditions and subsequent processing processes, difficult to industrialized production and application, instability, etc., and achieve stable electrical modulation. characteristics, to achieve large-scale industrial production, the effect of simple structure

Active Publication Date: 2019-01-04
FUDAN UNIV
View PDF4 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] In addition, some common p-type oxide semiconductor materials, such as SnO and Cu 2 O, its preparation process conditions and subsequent treatment process are extremely harsh, and it is unstable when exposed to the air. It is easie...

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A ternary p-type CuBi2O4 thin film transistor and a preparation method thereof
  • A ternary p-type CuBi2O4 thin film transistor and a preparation method thereof
  • A ternary p-type CuBi2O4 thin film transistor and a preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The schematic diagram of the structure of the p-type oxide thin film transistor in this embodiment is as follows figure 1 As shown, it specifically includes the following parts:

[0037] A p-type heavily doped silicon substrate is used as a gate electrode;

[0038] a silicon dioxide insulating layer grown on the above-mentioned silicon substrate by thermal oxidation;

[0039] p-type CuBi 2 o 4 a channel layer grown on the aforementioned silicon dioxide insulating layer;

[0040] Both the source and drain electrodes are gold films, which are grown on the above-mentioned channel layer.

[0041] The p-type CuBi described in this embodiment 2 o 4 A method for preparing a thin film transistor, comprising the following steps:

[0042] (1) Cleaning silicon wafers: ultrasonically clean the silicon wafers with alcohol, acetone, and deionized water for 10 minutes each to remove pollutants on the surface of the silicon wafers, and finally dry them with high-purity nitrogen ...

Embodiment 2

[0048] The schematic structural diagram of the p-type oxide thin film transistor of this embodiment is the same as that of Embodiment 1, and specifically includes the following parts:

[0049] A p-type heavily doped silicon substrate is used as a gate electrode;

[0050] a silicon dioxide insulating layer grown on the above-mentioned silicon substrate by thermal oxidation;

[0051] p-type CuBi 2 o 4 a channel layer grown on the aforementioned silicon dioxide insulating layer;

[0052] Both the source and drain electrodes are gold films, which are grown on the above-mentioned channel layer.

[0053] The p-type CuBi described in this embodiment 2 o 4 A method for preparing a thin film transistor, comprising the following steps:

[0054] (1) Cleaning silicon wafers: ultrasonically clean the silicon wafers with alcohol, acetone, and deionized water for 10 minutes each to remove pollutants on the surface of the silicon wafers, and finally dry them with high-purity nitrogen fo...

Embodiment 3

[0060] The schematic structural diagram of the p-type oxide thin film transistor of this embodiment is the same as that of Embodiment 1, and specifically includes the following parts:

[0061] A p-type heavily doped silicon substrate is used as a gate electrode;

[0062] a silicon dioxide insulating layer grown on the above-mentioned silicon substrate by thermal oxidation;

[0063] p-type CuBi 2 o 4 a channel layer grown on the aforementioned silicon dioxide insulating layer;

[0064] Both the source and drain electrodes are gold films, which are grown on the above-mentioned channel layer.

[0065] The p-type CuBi described in this embodiment 2 o 4 A method for preparing a thin film transistor, comprising the following steps:

[0066] (1) Cleaning silicon wafers: ultrasonically clean the silicon wafers with alcohol, acetone, and deionized water for 10 minutes each to remove pollutants on the surface of the silicon wafers, and finally dry them with high-purity nitrogen fo...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of thin film transistors, in particular to a ternary p-type CuBi2O4 thin film transistor and a preparation method thereof. A p-type CuBi2O4 channel layer is prepared on a thermal oxide SiO2 substrate by a radio frequency magnetron sputtering technology, and a source/drain electrode adopts Au, Ni, Cu or ITO electrode to form a bottom gate structure typeTFT device with a certain p-type modulation function. The CuBi2O4 channel layer prepared by the invention has stable p-type semiconductor characteristics, simple device structure and compatible preparation process with microelectronics, and has wide industrial application prospects in OLED display and transparent electronic circuit.

Description

technical field [0001] The invention belongs to the field of thin film transistor preparation, and in particular relates to a p-type oxide thin film transistor and a preparation method thereof. Background technique [0002] A thin film transistor is a three-terminal semiconductor device that relies on majority carriers to transmit current. It is divided into source, drain and gate, and the types are n-type and p-type. Due to the advantages of high mobility, good transparency, and low threshold voltage, this type of semiconductor device is widely used in flat panel displays and fully transparent electronic circuits, and has broad industrial application prospects. Not only that, with the emergence of new materials and new structures, thin film transistors can be applied not only to display arrays, but also to emerging fields such as gas sensors, neural networks, and artificial intelligence, becoming the focus of multidisciplinary attention. [0003] As we all know, there are ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L29/786H01L21/34
CPCH01L29/66742H01L29/7869
Inventor 任锦华张群
Owner FUDAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap