Photoelectrochemical cell

A photoelectrochemical and photocatalytic technology, applied in the field of photoelectrochemistry, can solve the problems of complex process and low sunlight utilization efficiency, and achieve the effect of simple process, patterning function, and easy industrial continuous production

Active Publication Date: 2019-01-11
THE UNIV OF NOTTINGHAM NINGBO CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the photoelectrochemical cell usually adopts a single-chamber or double-chamber structure, often requires the use of a proton exchange membrane, and the photoanode and photocathode are on both sides, which need to be prepared separately, the process is complicated, and the utilization efficiency of sunlight is low.

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preparation example Construction

[0051] The preparation method of the slurry containing n-type semiconductor is:

[0052] The n-type semiconductor is dispersed in a solvent containing a binder to obtain a slurry, and the solvent is selected from chloroform, NMP, methylene chloride, toluene, ethanol, isopropanol, ethylene glycol, distilled water, DMF, and ether One or more, preferably chloroform-ethylene glycol-ethanol mixed solvent. The binder is selected from one or more of PVA, PVDF, PMMA, PS and PTFE, preferably PVA.

[0053] The preparation method of the photocathode is:

[0054] Coating or printing the slurry containing p-type semiconductor on the surface of photocathode conductive substrate, and drying to obtain photocathode. The p-type semiconductor is selected from TiSi 2 , the photocathode conductive substrate is selected from one or more of ITO conductive substrate, FTO conductive substrate, titanium, platinum, stainless steel, aluminum, copper, and carbon materials.

[0055] The preparation meth...

Embodiment 1

[0069] 1. Patterning of the conductive substrate: on the surface of one side inside the light-transmitting glass shell, a conductive substrate layer (material is titanium Ti) with a desired pattern is prepared, wherein the photocathode and the photoanode are isolated and arranged, The shape, size and quantity are the same, and the shape is a rectangle. The length of the rectangle is 20cm, the width is 10cm, the thickness is 50μm, and the quantity is 1 respectively.

[0070] 2. Printing preparation of the photoelectrode layer:

[0071] 0.5 g of photoanode catalyst TiO 2 Disperse in 5ml of chloroform-ethylene glycol-ethanol (volume ratio 5:3:2) mixed solvent containing PVA binder (0.05g), grind for 1h to make slurry respectively, and use screen printing technology to separate Printing the slurry on the surface of the conductive substrate, drying the solvent in the slurry at a temperature below 350°C, and obtaining an n-type semiconductor layer with a thickness of 10 μm after dr...

Embodiment 2

[0076] 1, the patterning method of conductive substrate is the same as embodiment 1

[0077] 2. Printing preparation of the photoelectrode layer:

[0078] TiO 2 For the preparation of the photoanode, 500mg WO 3 (purchased from Sigma–Aldrich, ≤20 μm, ≥99% purity), 0.5 mL of anhydrous ethylene glycol, and 50 μL of polyethylene glycol octylphenyl ether (Triton X-100) to make a homogeneous TiO 2 Photoanode slurry; take 400 μL of this uniform slurry and apply it on a conductive substrate (1.5cm X 1.5cm X 1.5cm) that has deposited Ti, dry it overnight at 60°C, and finally heat it at 200°C for 30min to remove the remaining ethylene glycol , to obtain a photoanode with an n-type semiconductor layer with a thickness of 10 μm.

[0079] TiSi 2 For the preparation of photocathode, 500mg TiSi 2 (purchased from Sigma–Aldrich), 0.5 mL of anhydrous ethylene glycol, and 50 μL of polyethylene glycol octylphenyl ether (Triton X-100) to make a uniform TiSi 2 Photocathode slurry: Take 400 μL...

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Abstract

The invention provides a photoelectrochemical cell. The photoelectrochemical cell comprises a photocathode and a photoanode which are arranged in parallel on the space, and projections of the photocathode and the photoanode on a plane vertical direction located by the photocathode and the photoanode are free from overlapping; the photocathode and the photoanode of the photoelectrochemical cell provided by the invention can simultaneously and maximally receive the irradiation of the vertical sunlight; two poles of the photoelectrochemical cell designed through the structure can be prepared through a coating method, printing and like technology, the process is simple, each of two poles has a patterning function and is easy for industrial continuous production, and can simultaneously receivethe irradiation, is free from using a proton membrane and capable of being manufactured as a flexible device, and the utilization efficiency of the sunlight is relatively high. The photoelectrochemical cell provided by the invention can degrade organic pollutant at the photoanode and remove multiple heavy metal ions and perform hydrogen production reaction at the photocathode, the dual-aim of removing pollutant through the solar energy and removing the heavy metal ions and producing hydrogen through the solar energy can be realized, thereby solving the environment pollution and energy crisis problems.

Description

technical field [0001] The invention belongs to the technical field of photoelectrochemistry, and in particular relates to a photoelectrochemical cell and a preparation method thereof. Background technique [0002] Photoelectrochemical cell, which absorbs solar energy through photoelectrodes and converts light energy into electrical energy. Semiconductors are usually used as photoelectrodes, n-type semiconductors are used as photoanodes, and P-type semiconductors are used as photocathodes. Photogenerated electron-hole pairs are generated; after the electron-hole pairs are separated, due to the influence of the upward bending of the electrode surface energy band and the drive of the photogenerated voltage, the electrons move to the bulk phase and pass through the external circuit under the photogenerated bias voltage or external bias voltage Reaching the counter electrode, the electrons reach the counter electrode to participate in the reduction reaction, while the holes mig...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/416G01N27/30
CPCG01N27/30G01N27/416
Inventor 夏兰陈政余林颇胡笛
Owner THE UNIV OF NOTTINGHAM NINGBO CHINA
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