Manufacturing method of semiconductor device with field plate structure with gradient thickness in trench

A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increasing the impurity back diffusion of the epitaxial layer of the substrate, increasing the process time, and reducing the production efficiency.

Active Publication Date: 2020-11-13
CSMC TECH FAB2 CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, this manufacturing method includes multiple times of oxidation and etching back, which increases the reverse diffusion of impurities from the substrate to the epitaxial layer to a certain extent, increases the process time, and reduces the production efficiency.

Method used

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  • Manufacturing method of semiconductor device with field plate structure with gradient thickness in trench
  • Manufacturing method of semiconductor device with field plate structure with gradient thickness in trench
  • Manufacturing method of semiconductor device with field plate structure with gradient thickness in trench

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Embodiment Construction

[0021] In order to facilitate the understanding of the present invention, the present invention will be described more fully below with reference to the associated drawings. A preferred embodiment of the invention is shown in the drawings. However, the present invention can be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that the disclosure of the invention will be thorough and complete.

[0022] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the technical field of the invention. The terminology used herein in the description of the present invention is for the purpose of describing specific embodiments only, and is not intended to limit the present invention. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0023] The semico...

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PUM

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Abstract

Disclosed is a method for manufacturing a semiconductor device having a field plate structure with gradually varying thickness in a trench, the method comprising: step A, forming a trench in a surface of a wafer; step B, filling the trench with silicon oxide by means of deposition; step C, removing a portion of the surface of the silicon oxide in the trench by means of etching; step D, forming a silicon oxide corner structure at a corner at the top of the trench by means of thermal oxidation; step E, depositing a nitrogen-containing compound on the surface of the wafer; step F, carrying out dry etching on the nitrogen-containing compound to form, on a surface of the silicon oxide corner structure, nitrogen-containing compound sidewall residues extending to the inside of the trench; step G, taking the nitrogen-containing compound sidewall residues as a mask, and removing a portion of the surface of the silicon oxide in the trench by means of etching; successively repeating step E to step G until the silicon oxide in the trench is etched to be of the thickness required for bottom silicon oxide; step H, removing the nitrogen-containing compound in the trench; and step I, filling the trench with polycrystalline silicon.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for manufacturing a semiconductor device with a field plate structure with a gradually changing thickness in a trench. Background technique [0002] In order to reduce energy consumption and save energy, low-voltage power metal oxide semiconductor field effect transistor (MOSFET) technology is undergoing continuous technical improvement, and device structures such as field plates and super junctions are also transplanted from high-voltage power devices to low-voltage devices and improved. and optimized to reduce the specific on-resistance of low-voltage power devices. [0003] Among them, MOSFETs with a trench field plate structure based on a constant thickness are particularly common. However, the uneven distribution of potential and electric field due to the constant thickness of the field plate dielectric makes it difficult to optimize the device characteri...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/40H01L21/336
CPCH01L29/401H01L29/407H01L29/66409H01L29/40H01L29/78
Inventor 祁树坤孙贵鹏
Owner CSMC TECH FAB2 CO LTD
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