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A kind of high-k thin film mos structure and its preparation and detection method

A MOS structure and thin film technology, applied in the field of microelectronics, can solve the problems of unsatisfactory performance such as conduction band offset and high temperature stability, unable to meet the needs of high-end integrated circuits, small forbidden band width, etc., and achieve easy mass production. , the effect of high band gap and low dielectric constant

Active Publication Date: 2021-09-21
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, with the emergence of technology nodes where the line width of integrated circuits is reduced to 28nm, traditional SiO 2 The reliability of the gate dielectric film has declined, and more and more researchers are looking for new high-k gate dielectric materials to replace SiO 2 to improve integration
[0003] However, in the prior art instead of SiO 2 The dielectric constant, conduction band offset and high temperature stability of the gate dielectric material are not ideal, and the gate dielectric material with high dielectric constant (high k) often has a small forbidden band width, which cannot meet the micro Demand for high-end integrated circuits with a line width below 28nm in the electronic field

Method used

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  • A kind of high-k thin film mos structure and its preparation and detection method

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Embodiment approach

[0036] According to a preferred embodiment of the present invention, the oxygen-containing gas includes oxygen and an inert gas.

[0037] In a further preferred embodiment, the flow ratio of the inert gas to oxygen is (20-40):10, preferably (25-35):10, more preferably 30:10.

[0038] In a further preferred embodiment, the inert gas is argon.

[0039] According to a preferred embodiment of the present invention, the MOS structure further includes metal electrodes sputtered on the upper layer of the film and the lower layer of the substrate.

[0040] In a further preferred embodiment, the metal electrode is selected from one or more of gold, silver and palladium electrodes.

[0041] In a further preferred embodiment, the metal electrode is a gold electrode.

[0042] In a second aspect, the present invention provides a method for preparing a high-k thin film MOS structure, the method comprising the following steps:

[0043] Step 1, cleaning the substrate and pretreating the ta...

Embodiment 1

[0141] (1) Cut out a silicon wafer with a size of about 15mm×15mm for cleaning, dry it with nitrogen gas and quickly put it into the magnetron sputtering coating equipment (JCP500 high-vacuum multi-target magnetron sputtering coating equipment produced by Beijing Techno Technology Co., Ltd.) and fix it on the base plate of the chamber; take the gadolinium target and titanium target polished by fine sandpaper, install them on the target position, close the chamber door, and evacuate to 7×10 -4 Below Pa.

[0142] (2) When the target baffle is closed, 40 sccm of argon gas is introduced, and the power of the radio frequency power supply where the gadolinium target and the titanium target are located is adjusted to 80W, and pre-sputtering is performed to further clean the surface of the target material, and the radio frequency power supply is turned off after 20 minutes.

[0143] (3) Adjust the RF power of the gadolinium target to 20W, the RF power of the titanium target to 20W, an...

Embodiment 2

[0147] (1) Clean the quartz glass ultrasonically with acetone, dry it with nitrogen, and quickly put it on the base plate of the magnetron sputtering coating equipment (JCP500 high-vacuum multi-target magnetron sputtering coating equipment produced by Beijing Techno Technology Co., Ltd.) And fix it; take the gadolinium target and titanium target polished by fine sandpaper, install them on the target position, close the cavity door, and evacuate to 7×10 -4 Below Pa.

[0148] (2) When the target baffle is closed, 40 sccm of argon gas is introduced, and the power of the radio frequency power supply where the gadolinium target and the titanium target are located is adjusted to 80W, and pre-sputtering is performed to further clean the surface of the target material, and the radio frequency power supply is turned off after 20 minutes.

[0149] (3) Adjust the RF power of the gadolinium target to 20W, the RF power of the titanium target to 20W, and the ratio of argon and oxygen to 30:...

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Abstract

The invention discloses a high-k thin film MOS structure and a preparation and detection method thereof. The MOS structure includes a high-k gate dielectric film, and the film is sputtered on a substrate by a rare earth target material and a titanium target material in an oxygen-containing gas get on. The preparation method of the MOS structure includes: cleaning the substrate, pre-treating the target material; introducing oxygen-containing gas, and sputtering on the substrate to obtain a high-k gate dielectric film; Sputtering the electrodes to obtain the MOS structure; annealing the prepared MOS structure. The detection method is to sputter a high-k gate dielectric thin film onto a quartz substrate, and collect spectra to detect the forbidden band width. The preparation method of the invention is simple and easy to implement, and the prepared MOS structure has excellent electrical and optical properties; the detection method is intuitive and easy to operate.

Description

technical field [0001] The invention belongs to the field of microelectronics, in particular to a MOS structure, in particular to a high-k thin film MOS structure and a preparation and detection method thereof. Background technique [0002] With the rapid development of semiconductor technology, micro-nano electronic manufacturing technology is becoming more and more high-energy, multi-functional, large-capacity and miniaturized. The integration of semiconductor chips is getting higher and higher, and the size of transistors is getting smaller and smaller. At present, with the emergence of technology nodes where the line width of integrated circuits is reduced to 28nm, traditional SiO 2 The reliability of the gate dielectric film has declined, and more and more researchers are looking for new high-k gate dielectric materials to replace SiO 2 to improve integration. [0003] However, in the prior art instead of SiO 2 The dielectric constant, conduction band offset and high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/66H01L29/06H01L21/336
CPCH01L22/10H01L29/06H01L29/66409
Inventor 武燕庆李栓傅凯林友宇郑捷李星国
Owner PEKING UNIV