A broadband photodetector based on a topological insulator bismuth selenide electrode

Abstract

The invention discloses a wide-band photodetector based on a perovskite film of a topological insulator bismuth selenide electrode and a preparation method thereof, which is provided with a Bi 2 Se 3 Thin film electrode, in Bi 2 Se 3 A layer of FA is set on the thin film electrode 0.85 Cs 0.15 PB 3 perovskite thin film. The present invention utilizes the characteristics of the large specific surface area of ​​the perovskite thin film, combined with the special conductive surface state of the topological insulator, and the prepared photodetector is sensitive in the range of ultraviolet-visible-near-infrared light; and the detector preparation process of the present invention The simplicity and good device performance open up new prospects for the application of topological insulator materials in photodetectors.

Description

technical field [0001] The invention belongs to the field of semiconductor photodetectors, in particular to a topological insulator Bi 2 Se 3 Electrodes of perovskite thin films for broadband high-performance photodetectors. Background technique [0002] Photodetectors are widely used in optical communication, imaging, and biosensing because they can convert optical signals into electrical output signals. The selection of electrode materials plays an important role in photodetectors. Traditional photodetector electrode materials, such as noble metals such as gold, silver, and platinum, are expensive, and there are considerable dangling bonds on their irregular surfaces, which may lead to Severe carrier scattering and impede charge carrier transport. At present, some oxide electrodes (such as ITO) or graphene electrodes are more and more applied to optoelectronic devices because of their own advantages, but due to the poor flexibility of ITO electrodes and low transmittanc...

AI Technical Summary

Problems solved by technology

The selection of electrode materials plays an important role in photodetectors. Traditional photodetector electrode materials, such as noble metals such as gold, silver, and platinum, are expensive, and there are considerable dangling bonds on their irregular surfaces, which may lead to Severe carrier scattering and impeded transport of charge carriers

At present, some oxide electrodes (such as ITO) or graphene electrodes are more and more applied to optoelectronic devices because of their own advantages, but due to the poor flexibility of ITO electrodes and low transmittance in the infrared region, the production of graphene electrodes The complexity of the transfer process also limits the application of both

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