Preparation method of nitrogen-silicon double-modified graphene quantum dot solid film
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- CHINA THREE GORGES UNIV
- Publication Date
- 2019-01-29
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Abstract
Description
technical field
[0001] The invention relates to the technical field of nano-film material preparation, in particular to a method for preparing a nitrogen-silicon double-modified graphene quantum dot solid-state film. Background technique
[0002] Studies have found that graphene quantum dots have excellent electrical properties, biocompatibility, low toxicity, strong acid and alkali resistance, structural stability, and good mechanical strength. In addition, it also has some unique nanostructure effects of quantum dots, such as quantum confinement effect, edge effect, excellent wide absorption and narrow emission characteristics, photoelectric conversion ability and electron mobility. The above characteristics make graphene quantum dots have many excellent physical and chemical properties, so it has important application value in various fields such as biological imaging, disease detection, drug delivery, electronic devices, solar photovoltaic cells, Raman enhancement, catal...