Preparation method of nitrogen-silicon double-modified graphene quantum dot solid film

A graphene quantum dot, solid-state film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of poor crystallinity of graphene quantum dots, difficulty in packaging, and low yield of graphene quantum dots, etc. problem, to achieve the effect of simple preparation method, overcoming difficulty in sealing and avoiding leakage
CN109280902AActive Publication Date: 2019-01-29CHINA THREE GORGES UNIV

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
CHINA THREE GORGES UNIV
Publication Date
2019-01-29

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Abstract

The invention discloses a preparation method of a nitrogen-silicon double-modified graphene quantum dot solid film. According to the method, the technology of radio frequency plasma enhanced chemicalvapor deposition is used as a growth method of the graphene quantum dot solid film; the high purity ethylene is used as carbon source gas of the graphene quantum dot growth; and silane mixed gas and high purity nitrogen are used to correspondingly provide silicon modification and nitrogen modification for the graphene quantum dot growth. Compared with common methods for preparing graphene quantumdots at present, such as an electrochemical method, a hydrothermal method, an acid oxidation method, a solution chemistry method, and a microwave ultrasonic method, the preparation method has the outstanding advantages that the graphene quantum dots are not present in a liquid and colloidal form, but in the form of a solid film, and the preparation process is compatible with a conventional semiconductor process. The preparation method of the nitrogen-silicon double-modified graphene quantum dot solid film can make the graphene quantum dots be well applied in semiconductor devices such as solarbatteries, photodetectors and light-emitting diodes.
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Description

technical field

[0001] The invention relates to the technical field of nano-film material preparation, in particular to a method for preparing a nitrogen-silicon double-modified graphene quantum dot solid-state film. Background technique

[0002] Studies have found that graphene quantum dots have excellent electrical properties, biocompatibility, low toxicity, strong acid and alkali resistance, structural stability, and good mechanical strength. In addition, it also has some unique nanostructure effects of quantum dots, such as quantum confinement effect, edge effect, excellent wide absorption and narrow emission characteristics, photoelectric conversion ability and electron mobility. The above characteristics make graphene quantum dots have many excellent physical and chemical properties, so it has important application value in various fields such as biological imaging, disease detection, drug delivery, electronic devices, solar photovoltaic cells, Raman enhancement, catal...

Claims

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