Preparation method of nitrogen-silicon double-modified graphene quantum dot solid film

A graphene quantum dot, solid-state film technology, applied in gaseous chemical plating, metal material coating process, coating and other directions, can solve the problem of poor crystallinity of graphene quantum dots, difficulty in packaging, and low yield of graphene quantum dots, etc. problem, to achieve the effect of simple preparation method, overcoming difficulty in sealing and avoiding leakage

Active Publication Date: 2019-01-29
CHINA THREE GORGES UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The above method has the disadvantages of using strong acid and strong alkali in the preparation process of graphene quantum dots or low yield of graphene quantum dots or poor crystallinity of graphene quantum dots.
In addition, graphene quantum dots prepared by these methods are generally dispersed in solutions or colloids, and this liquid or colloidal graphene quantum dots will cause difficulties in packaging when applied in optoelectronic devices

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  • Preparation method of nitrogen-silicon double-modified graphene quantum dot solid film

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Embodiment 1

[0013] A method for preparing a nitrogen-silicon double-modified graphene quantum dot solid film, the method comprising the following steps:

[0014] (1) Clean the monocrystalline silicon substrate with conventional cleaning methods;

[0015] (2) Using high-purity ethylene (purity greater than 99.995%), high-purity nitrogen (purity greater than 99.999%) and silane mixed gas diluted with argon to a concentration of 5% as the working gas, plasma enhanced chemical vapor deposition technology is used in the step (1) Deposit a layer of nitrogen-silicon double-modified graphene quantum dot solid film on the surface of the single crystal silicon substrate. The process parameters are: RF power density is 400W / cm 2 , the substrate temperature is 200°C, the RF frequency is 13.56MHz, the cavity pressure is 60Pa, the flow rate of high-purity ethylene gas is 60 sccm, the flow rate of high-purity nitrogen gas is 10 sccm, the flow rate of silane mixed gas is 5 sccm, and the coating time is 6...

Embodiment 2

[0018] A method for preparing a nitrogen-silicon double-modified graphene quantum dot solid film, the method comprising the following steps:

[0019] (1) Clean the monocrystalline silicon substrate with conventional cleaning methods;

[0020] (2) Using high-purity ethylene (purity greater than 99.995%), high-purity nitrogen (purity greater than 99.999%) and silane mixed gas diluted with argon to a concentration of 5% as the working gas, plasma enhanced chemical vapor deposition technology is used in the step (1) A layer of nitrogen-silicon double-modified graphene quantum dot solid film is deposited on the surface of the single crystal silicon substrate, and the process parameters are: the radio frequency power density is 500W / cm 2 , the substrate temperature is 250°C, the RF frequency is 13.56MHz, the cavity pressure is 80Pa, the flow rate of high-purity ethylene gas is 80 sccm, the flow rate of high-purity nitrogen gas is 12 sccm, the flow rate of silane mixed gas is 7 sccm,...

Embodiment 3

[0023] A method for preparing a nitrogen-silicon double-modified graphene quantum dot solid film, the method comprising the following steps:

[0024] (1) Clean the monocrystalline silicon substrate with conventional cleaning methods;

[0025] (2) Using high-purity ethylene (purity greater than 99.995%), high-purity nitrogen (purity greater than 99.999%) and silane mixed gas diluted with argon to 10% as the working gas, plasma enhanced chemical vapor deposition technology is used in the step (1) Deposit a layer of nitrogen-silicon double-modified graphene quantum dot solid film on the surface of the single crystal silicon substrate. The process parameters are: RF power density is 600W / cm 2 , the substrate temperature is 300°C, the RF frequency is 13.56MHz, the chamber pressure is 90Pa, the flow rate of high-purity ethylene gas is 90 sccm, the flow rate of high-purity nitrogen gas is 15 sccm, the flow rate of silane mixed gas is 10 sccm, and the coating time is 90 minutes.

[0...

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Abstract

The invention discloses a preparation method of a nitrogen-silicon double-modified graphene quantum dot solid film. According to the method, the technology of radio frequency plasma enhanced chemicalvapor deposition is used as a growth method of the graphene quantum dot solid film; the high purity ethylene is used as carbon source gas of the graphene quantum dot growth; and silane mixed gas and high purity nitrogen are used to correspondingly provide silicon modification and nitrogen modification for the graphene quantum dot growth. Compared with common methods for preparing graphene quantumdots at present, such as an electrochemical method, a hydrothermal method, an acid oxidation method, a solution chemistry method, and a microwave ultrasonic method, the preparation method has the outstanding advantages that the graphene quantum dots are not present in a liquid and colloidal form, but in the form of a solid film, and the preparation process is compatible with a conventional semiconductor process. The preparation method of the nitrogen-silicon double-modified graphene quantum dot solid film can make the graphene quantum dots be well applied in semiconductor devices such as solarbatteries, photodetectors and light-emitting diodes.

Description

technical field [0001] The invention relates to the technical field of nano-film material preparation, in particular to a method for preparing a nitrogen-silicon double-modified graphene quantum dot solid-state film. Background technique [0002] Studies have found that graphene quantum dots have excellent electrical properties, biocompatibility, low toxicity, strong acid and alkali resistance, structural stability, and good mechanical strength. In addition, it also has some unique nanostructure effects of quantum dots, such as quantum confinement effect, edge effect, excellent wide absorption and narrow emission characteristics, photoelectric conversion ability and electron mobility. The above characteristics make graphene quantum dots have many excellent physical and chemical properties, so it has important application value in various fields such as biological imaging, disease detection, drug delivery, electronic devices, solar photovoltaic cells, Raman enhancement, catal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/26C23C16/505C23C16/02
CPCC23C16/0227C23C16/26C23C16/505
Inventor 姜礼华田海燕彭宇汪涛肖婷向鹏谭新玉
Owner CHINA THREE GORGES UNIV
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