Irradiation detector based on nonpolar InAlN/GaN heterostructure and preparation method thereof
A technology of irradiated detectors and heterogeneous structures, applied in the field of microelectronics, can solve the problems of large dark current of detectors, limited detection sensitivity and detection efficiency, low carrier mobility, etc., and achieve suppression of high-density polarized charges The effect of suppressing the generation of dark current and improving the signal-to-noise ratio
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Embodiment 1
[0041] See figure 1 , figure 1 A schematic flow chart of a method for preparing an irradiation detector based on a non-polar InAlN / GaN heterostructure provided by an embodiment of the present invention, the method includes the following steps:
[0042] Step a: growing a nucleation layer on the substrate;
[0043] Step b: growing a non-polar GaN buffer layer on the nucleation layer;
[0044] Step c: growing a non-polar GaN channel layer on the non-polar GaN buffer layer;
[0045] Step d: growing an insertion layer on the non-polar GaN channel layer;
[0046] Step e: growing a non-polar InAlN barrier layer on the insertion layer;
[0047] Step f: sequentially etching the non-polar InAlN barrier layer, the insertion layer, and the non-polar GaN channel layer, and then preparing cathode and anode electrodes on the non-polar GaN channel layer, and finally The preparation of the radiation detector is completed.
[0048] In a specific embodiment, the substrate material is r-pla...
Embodiment 2
[0068] This embodiment describes in detail the preparation method of the radiation detector of the present invention on the basis of the above embodiments.
[0069] Step 1: Select an insulating r-plane sapphire substrate, and perform high-temperature nitriding treatment on the insulating sapphire substrate by using a low-pressure metal-organic chemical vapor deposition (Metal-organic Chemical Vapor Deposition, MOCVD) process.
[0070] Place the sapphire on the graphite base to ensure that the substrate floats normally, and then place the graphite base in the MOCVD reaction chamber to ensure that the graphite base can self-propagate and revolve normally. Turn on the vacuum pump of the reaction chamber to vacuumize the reaction chamber, so that the vacuum degree of the MOCVD reaction chamber is lower than 1×10 -2 Torr. The mixed gas of high-purity ammonia and hydrogen is passed into the reaction chamber, while the vacuum pump in the MOCVD reaction chamber continues to work to e...
Embodiment 3
[0111] The embodiment of the present invention provides another method for preparing an irradiation detector based on a non-polar InAlN / GaN heterostructure. Include the following steps:
[0112] Step 200: Select an m-plane SiC substrate, and perform high-temperature nitriding treatment on the m-plane SiC substrate by using a low-pressure MOCVD process.
[0113] Place the SiC substrate on the graphite base to ensure that the substrate floats normally, and then place the graphite base in the MOCVD reaction chamber to ensure that the base can self-propagate and revolve normally. Turn on the vacuum pump of the reaction chamber to vacuumize the reaction chamber, so that the vacuum degree of the MOCVD reaction chamber is lower than 1×10 -2 Torr. The mixed gas of high-purity ammonia and hydrogen is passed into the MOCVD reaction chamber, while the vacuum pump in the MOCVD reaction chamber continues to work to ensure that there is a 40Torr high-purity ammonia atmosphere in the MOCVD...
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