High-efficiency cutting method for crystalline silicon blocks

A cutting method and silicon block technology, which is applied in the field of silicon wafer manufacturing, can solve problems such as low yield rate, cutting speed, low efficiency, and high cost, and achieve the effects of reducing steel wire unit consumption, increasing slicing production capacity, and reducing energy consumption

Inactive Publication Date: 2019-02-05
YANGZHOU RONGDE NEW ENERGY TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] At the same time, a silicon block cutting method is disclosed in the prior art, its publication number is: CN 102350741 A, which discloses cutting equipment and a cutting process, but its disadvantages are that its cutting speed and efficiency are low, and the yield rate is low. high, high cost

Method used

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  • High-efficiency cutting method for crystalline silicon blocks
  • High-efficiency cutting method for crystalline silicon blocks
  • High-efficiency cutting method for crystalline silicon blocks

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] Such as figure 1 A kind of crystalline silicon block high-efficiency cutting method shown, comprises the following steps:

[0033] 1) Selection of diamond wire and cutting fluid: select single-polycrystalline mixed sand electroplated diamond wire, take 60um wire as an example, control the blade height at 5um, and control the outer diameter of the envelope at ≤81um; use low COD coolant for cutting fluid It is worth mixing with pure water, the COD of the coolant is less than 800,000 mg / L, and the surface tension is less than or equal to 35mN / m; the combination of coolant and pure water is controlled at 0.8 L / knife and added to 300L of pure water in the cylinder ;

[0034] 2) Guide wheel processing: the inclination angle of the guide wheel groove is 30°, and the groove depth is 180 μm;

[0035] 3) Process parameter setting:

[0036] A. The cutting speed of steel wire is set to 10m / s, and the cutting ratio is a certain stage of the whole process from the zero point set b...

Embodiment 2

[0044] Such as figure 1 A kind of crystalline silicon block high-efficiency cutting method shown, comprises the following steps:

[0045] 1) Selection of diamond wire and cutting fluid: choose single-polycrystalline mixed sand electroplated diamond wire, take 60um wire as an example, control the blade height at 5.5um, and control the outer diameter of the envelope at ≤81um; use low COD cooling for cutting fluid It is worth mixing liquid and pure water, the COD of the cooling liquid is less than 800,000 mg / L, and the surface tension is less than or equal to 35mN / m; middle;

[0046] 2) Guide wheel processing: the inclination angle of the guide wheel groove is 35°, and the groove depth is 200μm;

[0047] 3) Process parameter setting:

[0048] A. The cutting speed of steel wire is set to 20m / s, and the cutting ratio is a certain stage of the whole process from the zero point set by the slicer to the end of cutting;

[0049] B. Tension setting, select the tension according to t...

Embodiment 3

[0056] Such as figure 1 A kind of crystalline silicon block high-efficiency cutting method shown, comprises the following steps:

[0057] 1) Selection of diamond wire and cutting fluid: select single-polycrystalline mixed sand electroplated diamond wire, take 60um wire as an example, control the blade height at 6um, and control the outer diameter of the envelope at ≤81um; use low COD coolant for cutting fluid It is worth mixing with pure water, the COD of the coolant is less than 800,000 mg / L, and the surface tension is less than or equal to 35mN / m; the combination of coolant and pure water is controlled at 1.5 L / knife, and it is added to 350L of pure water in the cylinder ;

[0058] 2) Guide wheel processing: the inclination angle of the guide wheel groove is 40°, and the groove depth is 220μm;

[0059] 3) Process parameter setting:

[0060] A. The cutting speed of steel wire is set to 30m / s, and the cutting ratio is a certain stage of the whole process from the zero point...

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Abstract

The invention discloses a high-efficiency cutting method for crystalline silicon blocks in the field of solar energy application. The high-efficiency cutting method comprises the following steps of 1)diamond wire and cutting liquid selection, wherein a single-polycrystalline mixed sand electroplating diamond wire (the diamond wire diameter ranges from 50 micrometers to 70 micrometers is adopted,the cutting fluid is selected from a low COD coolant and pure water mixture; 2) guide wheel processing; 3) process parameter setting, wherein the diamond wire, the cutting fluid and a guide wheel arematched, after a cutting machine is assembled, the feeding speed of the working table is adjusted to be 800-3000micrometers per minute, the cutting fluid process flow is 110-180 KG/Min, the cutting liquid cooling temperature is 17-23 DEG C; 4) automatic cutting, wherein after the machine is started for warming up by 5-10 minutes, when it is known that the parameters are normal through spot check,automatic cutting starts; and 5) ending of cutting, wherein a rod is lifted to complete silicon block cutting. The high-efficiency cutting method effectively improves the cutting speed and the cuttingefficiency, improves the yield rate, reduces the cost of auxiliary materials like the diamond wire consumption, improves the slice profitability, and can be used for silicon wafer production.

Description

technical field [0001] The invention relates to a silicon chip manufacturing method, in particular to a crystal silicon block cutting method. Background technique [0002] With the development of society, the solar photovoltaic industry has gradually become a new leading industry. In the process of cutting solar silicon wafers, the steel wires commonly used in the industry for cutting polycrystalline silicon wafers are mainly single crystal diamond electroplated diamond wires, such as the diamond wire production method described in the publication number CN104723229A. Compared with mortar wire cutting, the processing efficiency of diamond wire cutting polycrystalline is increased by about 40%, and the cost is reduced by about 60%. The whole processing process is more environmentally friendly and efficient. [0003] The advantages of diamond wire cutting polycrystalline are mainly reflected in the reduction of silicon consumption per wafer, the improvement of cutting efficie...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B28D5/00B28D5/04
CPCB28D5/0058B28D5/0076B28D5/045
Inventor 韩秋生崔三观程正景杨恒常传波
Owner YANGZHOU RONGDE NEW ENERGY TECH
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