GaN-Based LED electrode structure and manufacturing method thereof

Abstract

A GaN-based LED electrode structure and a manufacturing method thereof are provided. A P electrode is arranged on an ITO (indium tin oxide) current extension layer; an N electrode is arranged on a terrace face of an n-type GaN layer; each of the P electrode and the N electrode structurally includes a first Cr layer, a first Al layer, a Ti layer, an Au layer, a second Cr layer and a second Al layersequentially from bottom to top. The manufacturing method herein includes the steps of (1) making an ITO film layer, and etching a terrace of an n-type GaN layer; (2) making a photoetched electrode pattern to form a coated electrode structure; (3) making the electrode structure. photoresist pattern chamfering is suitably controlled to implement the coated electrode structure; the reasonable electrode structure design ensures good viscosity for an electrode, and luminous efficiency of a die is greatly improved; the whole electrode structure is simple in design; a conventional evaporation material is applied to the whole structure; the overall manufacturing process takes short time and low cost; the Gan-based LED electrode structure is applicable to large-scale manufacturing of all GaN-based LED dies.

Description

technical field [0001] The invention relates to a GaN-based LED tube core with a high-reflectivity electrode structure and a specific manufacturing method thereof, belonging to the technical field of semiconductor processing. Background technique [0002] LED (Light Emitting Diode) is a device that relies on semiconductor P-N junctions for electroluminescence. It is made of compounds such as nitrogen, arsenic, gallium, and phosphorus. It can convert electrical energy into light energy through the recombination of electrons and holes. Radiant. Its basic structure is a piece of electroluminescent semiconductor material, which is a solid-state semiconductor device that can directly convert electricity into light. The LED is placed on a shelf with leads, and then sealed with epoxy resin around it. , It is beneficial to protect the internal core wire, so the shock resistance of LED is very good. At the same time, LED is widely recognized as the fourth-generation lighting source...

AI Technical Summary

Problems solved by technology

However, in this structure, there is no mention of a specific method of forming a coated electrode, and the electrode structure film layer has as many as 9 layers to form a film under the condition of a high vacuum in the evaporation chamber, which takes a long time and the production efficiency is low. Low, at the same time, the design of TiN / Pt as the current blocking layer and conductive layer makes the cost of the whole electrode structure higher, the adhesion between TiN and Al layer is not very ideal, and there is a certain proportion of difficult welding lines when making electrodes

[0006] Therefore, under the premise that the production efficiency, production cost and luminous efficiency of the existing GaN-based LED electrode structure cannot be uniformly resolved, it is necessary to study a kind of electrode structure with moderate production cost, high efficiency, significantly improved electrode reflectivity and stable structure. LED electrode structure and specific manufacturing method thereof

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