A kind of white light perovskite type electroluminescence device and preparation method
An electroluminescent device, perovskite-type technology, applied in the fields of electro-solid devices, semiconductor/solid-state device manufacturing, electrical components, etc. The effect of carrier transport, corrosion inhibition, and ion exchange avoidance
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[0035] The present invention also provides a method for preparing a white-light perovskite-type electroluminescent device, comprising the following steps:
[0036] 1) Using acetone, deionized water and ethanol solution to ultrasonically clean the transparent substrate 1, blow it dry with dry nitrogen after cleaning, and put the transparent substrate 1 into a vacuum coating chamber to coat the anode layer 2;
[0037] 2) Spin-coat the hole transport layer 3 on the anode layer 2, heat anneal and dry to obtain the substrate A;
[0038] 3) Move the substrate A into the glove box, spin-coat the blue light perovskite light-emitting layer 4 on the hole transport layer 3, and then perform thermal annealing treatment to obtain the substrate B;
[0039] 4) Move the substrate B into the glove box, spin-coat the spacer layer 5 on the blue light perovskite light-emitting layer 4, then perform thermal annealing treatment and irradiate with ultraviolet rays at the same time to obtain the subs...
Embodiment 1
[0049] Clean the ITO whose surface roughness is less than 1nm, and dry it with nitrogen after cleaning; spin-coat the ITO surface to prepare PEDOT:PSS, and perform thermal annealing (150°C, 15min) to prepare the hole transport layer. Blue-light perovskite light-emitting layer CH was prepared by spin coating 3 NH 3 PbCl 2 Br, and perform thermal annealing treatment (100°C, 10min), and spin-coat on the blue light-emitting layer to prepare TFB:BP:PC 61 BM (1:0.05:1,5mg / ml) spacer layer (2000rpm, 40s, 15nm), and thermal annealing treatment (100°C, 5min), irradiate the substrate with a 365nm ultraviolet lamp while thermal annealing, in the spacer On-layer spin-coated yellow perovskite light-emitting layer CH 3 NH 3 PbBr 2 1, and carry out thermal annealing treatment (110 ℃, 10min), evaporate TPBi to prepare electron transport layer (40nm) on yellow light perovskite light-emitting layer; Evaporate metal cathode Ag (100nm) on electron transport layer. Turn on the external power...
Embodiment 2
[0051] Clean the ITO whose surface roughness is less than 1nm, and dry it with nitrogen after cleaning; spin-coat the ITO surface to prepare PEDOT:PSS, and perform thermal annealing (150°C, 15min) to prepare the hole transport layer. Blue-light perovskite light-emitting layer CH was prepared by spin coating 3 NH 3 PbCl 2 Br, and perform thermal annealing treatment (100°C, 10min), and spin-coat on the blue light-emitting layer to prepare TFB:BP:PC 61 BM (1:0.05:1,5mg / ml) spacer layer (2000rpm, 40s, 15nm), and thermal annealing treatment (100°C, 10min), irradiate the substrate with a 365nm ultraviolet lamp while thermal annealing, in the spacer On-layer spin-coated yellow perovskite light-emitting layer CH 3 NH 3 PbBr 2 1, and carry out thermal annealing treatment (110 ℃, 10min), evaporate TPBi to prepare electron transport layer (40nm) on yellow light perovskite light-emitting layer; Evaporate metal cathode Ag (100nm) on electron transport layer. Turn on the external powe...
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