Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for improving quality of perovskite crystals and performance of battery by passivating charged defects

A technology of crystal quality and battery performance, applied in the direction of electric solid-state devices, circuits, photovoltaic power generation, etc., can solve complex problems, achieve the effect of improving performance, improving crystal quality, and reducing material defects

Inactive Publication Date: 2019-02-26
UNIV OF SCI & TECH BEIJING
View PDF1 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the types of defects in perovskite materials are relatively complex, and it is still a severe challenge to find a more effective passivation method to achieve effective passivation of various charged defects.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for improving quality of perovskite crystals and performance of battery by passivating charged defects
  • Method for improving quality of perovskite crystals and performance of battery by passivating charged defects
  • Method for improving quality of perovskite crystals and performance of battery by passivating charged defects

Examples

Experimental program
Comparison scheme
Effect test

example 1

[0045] Example 1: Introducing NH into the perovskite precursor solution 4 Preparation of high-quality perovskite thin films by Cl

[0046] The substrate (FTO / ITO) was cleaned, ethanol, acetone, and isopropanol were alternately ultrasonicated for 10 minutes, and nitrogen was blown dry for later use. The cleaned substrate was etched by oxygen plasma for 15 minutes. Configure the perovskite precursor solution, mix 1:1 MAI and PbI 2 Dissolve in a mixed solvent of dimethyl sulfoxide and dimethylformamide, add 3% NH 4 Cl to obtain the precursor solution. The precursor solution is spin-coated onto the treated substrate in one step, the spin-coating speed is 2500rpm, and the operation is performed under the condition of humidity lower than 25%. The preparation method of the perovskite thin film without ionic ammonium salt additive is the same as above. Spin-coat the hole-transport material and evaporate the gold electrode. test.

[0047] The steady-state photoluminescence spect...

example 2

[0049] Example 2: Introducing NH in anti-solvent 4 Preparation of high-quality perovskite thin films by Cl

[0050] The substrate (FTO / ITO) was cleaned, ethanol, acetone, and isopropanol were alternately ultrasonicated for 10 minutes, and nitrogen was blown dry for later use. The cleaned substrate was etched by oxygen plasma for 15 minutes. Configure the perovskite precursor solution, mix 1:1 MAI and PbI 2 Soluble in a mixed solvent of dimethyl sulfoxide and dimethylformamide. Add 3% NH to the antisolvent 4 Cl additive. The perovskite precursor solution was spin-coated onto the treated substrate in one step, followed by the addition of NH 4 The anti-solvent after the Cl additive is added dropwise on the perovskite film, the spin coating speed is 2500rpm, and the operation is performed under the condition of humidity below 25%. The preparation method of perovskite film without non-solute-based bromide additive is the same as above. Spin-coated hole-transport material, va...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A method for improving the quality of perovskite crystals and the performance of a battery by passivating charged defects is provided. The structure formula of a perovskite material is ABX3, wherein Ais an organic cation, such as one or a mixture of two of CH3NH3, NH2-CH= NH2, CH3CH2NH3, CH3 (CH2) 2NH3 and CH3 (CH2) 3NH3, B is one or a mixture of two of the metal ions Pb2 + and Sn2 +, and X is one or a mixture of more of halogen ions Cl-, Br-, I-. An ionic ammonium salt additive can passivate defects with positive charges and negative charges, and, as an ionic crystal, is characterized in that ammonium ions and halogen ions are independently distributed, thereby having the advantage of selectively passivating defects. The method has the advantages of simple process and low cost, and is helpful to reduce material defects, improve the crystal quality of perovskite thin films, and improve the performance of perovskite solar cells, and has good application prospects.

Description

technical field [0001] The invention belongs to the field of nano functional material photovoltaic solar energy materials, relates to the preparation of high-quality perovskite materials and the construction of high-performance solar cells, in particular to a method for passivating charged defects to improve the quality of perovskite crystals and battery performance. Background technique [0002] Solar cells can directly convert solar energy into electrical energy, and can provide inexhaustible clean energy for the development of human society. It is an important countermeasure for human society to deal with the energy crisis and seek sustainable development. Among many light-absorbing materials, perovskite materials have excellent photoelectrochemical properties, such as large light absorption coefficient, long carrier lifetime, high charge mobility, long migration distance, and extremely low defect state density. 1] Si H, Liao Q, Zhang Z, et al. Nano Energy , 2016, 22: 22...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/48
CPCH10K71/12H10K30/00H10K30/88Y02E10/549
Inventor 张跃司浩楠康卓
Owner UNIV OF SCI & TECH BEIJING
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com